NXH600B100H4Q2F2PG [ONSEMI]
Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode;
| 型号： | NXH600B100H4Q2F2PG |
| 厂家： | 
ONSEMI |
| 描述： | Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode 双极性晶体管 |
| 文件： | 总16页 (文件大小：1775K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, 3 Channel
Symmetric Boost 1000 V,
200 A IGBT, 1200 V, 60 A SiC
Diode, Q2 Package
PIM44, 93x47 (PRESS FIT)
CASE 180HF
NXH600B100H4Q2F2PG,
NXH600B100H4Q2F2SG,
NXH600B100H4Q2F2SG-R
The NXH600B100H4Q2 is a Si/SiC Hybrid three channel
symmetric boost module. Each channel contains two 1000 V, 200 A
IGBTs, and two 1200 V, 60 A SiC diodes. The module contains an
NTC thermistor.
PIM44, 93x47 (SOLDER PIN)
CASE 180HE
Features
MARKING DIAGRAM
• Extremely Efficient Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
NXH600B100H4Q2F2xG
ATYYWW
NXH600B100H4Q2F2xG = Device Code
• Low Package Height
X
G
AT
= P or S
= Pb−Free Package
= Assembly & Test Site
Code
= Year and Work Week
Code
• Pb−Free, Halogen Free/BFR Free and RoHS Compliant
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies Systems
YYWW
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
Figure 1. NXH600B100H4Q2F2 Schematic Diagram
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NXH600B100H4Q2F2/D
July, 2023 − Rev. 5
NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Parameter
Symbol
Value
Unit
IGBT (T11, T21, T12, T22, T13, T23)
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1000
V
V
CES
V
20
30
GE
Positive Transient Gate*Emitter Voltage (tpulse = 5 ms, D < 0.10)
Continuous Collector Current @ T = 80°C
I
C
192
576
511
−40
175
A
A
c
Pulsed Peak Collector Current @ T = 80°C (T = 175°C)
I
C(Pulse)
c
J
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature (Note 2)
IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23)
Peak Repetitive Reverse Voltage
T
JMAX
V
RRM
1200
66
V
A
Continuous Forward Current @ T = 80°C
I
F
c
Repetitive Peak Forward Current (T = 175°C)
I
198
101
−40
175
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
T
JMAX
SILICON CARBIDE SCHOTTKY DIODE (D31, D41, D32, D42, D33, D43)
Peak Repetitive Reverse Voltage
V
1200
73
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
c
Repetitive Peak Forward Current (T = 175°C)
I
219
217
−40
175
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMIN
T
JMAX
Operating Temperature under Switching Condition
Storage Temperature Range
T
−40 to 150
−40 to 125
°C
°C
VJOP
T
stg
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz
Creepage Distance
V
4000
12.7
>600
V
RMS
is
mm
Comparative Tracking Index
CTI
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. Qualification at 175°C per discrete TO247.
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2
NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT (T11, T21, T12, T22, T13, T23) CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Cutoff Current
V
V
V
V
V
V
= 0 V, I = 1 mA
V
(BR)CES
1000
–
1165
–
–
10
2.3
–
V
mA
V
GE
GE
GE
GE
GE
GE
C
= 0 V, V = 1000V
I
CES
CE
Collector−Emitter Saturation Voltage
V
V
–
1.69
2.15
4.75
–
= 15 V, I = 200 A, T = 25°C
CE(sat)
C
J
= 15 V, I = 200 A, T = 175°C
–
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Internal Gate Resistor
Turn−on Delay Time
Rise Time
= V , I = 200 mA
3.8
–
6.6
1
V
mA
W
CE
C
GE(TH)
=
20 V, V = 0 V
I
GES
CE
r
–
2
–
g
T
J
= 25°C
t
–
111
15
–
ns
d(on)
V
V
= 600 V, I = 50A
C
CE
GE
t
r
–
–
= −9 V, 15 V, R
= 6 W
= 6 W,
gon
R
goff
Turn−off Delay Time
Fall Time
t
–
338
113
–
d(off)
t
f
–
–
Turn−on Switching Loss per Pulse
E
–
–
mJ
on
off
460
Turn off Switching Loss per Pulse
E
–
–
1930
111
17
Turn−on Delay Time
Rise Time
T
V
V
= 125°C
t
t
–
–
–
–
–
–
–
–
–
–
ns
J
CE
d(on)
= 600 V, I = 50 A
C
t
r
= −9 V, 15 V, R
goff
= 6 W,
GE
gon
R
= 6 W
Turn−off Delay Time
Fall Time
406
142
d(off)
t
f
Turn−on Switching Loss per Pulse
E
mJ
on
off
660
Turn off Switching Loss per Pulse
E
–
–
2860
13256
456
Input Capacitance
V
V
= 20 V, V = 0 V, f = 1 MHz
C
–
–
–
–
–
–
–
–
–
–
pF
CE
GE
ies
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oes
C
78
res
= 600 V, I = 40 A, V = −15V~15 V
Q
g
766
nC
CE
C
GE
Thermal Resistance −
Chip−to−Heatsink
Thermal grease, Thickness = 2.1 Mil ±2%
λ = 2.87 W/mK
R
0.45
K/W
thJH
Thermal Resistance − Chip−to−Case
R
–
0.186
–
K/W
V
thJC
IGBT INVERSE DIODE (D11, D21, D12, D22, D13, D23) CHARACTERISTICS
Diode Forward Voltage
V
–
–
–
1.10
0.975
0.98
1.55
–
I = 50 A, T = 25 °C
F
F
J
I = 50 A, T = 175 °C
F
J
Thermal Resistance −
Chip−to−Heatsink
Thermal grease, Thickness = 2.1 Mil ±2%
λ = 2.87 W/mK
R
–
K/W
K/W
thJH
thJC
Thermal Resistance −
Chip−to−Case
R
–
0.65
–
DIODES (D31, D41, D32, D42, D33, D43) CHARACTERISTICS
Diode Forward Voltage
V
t
–
–
–
–
–
–
–
1.54
2.27
13
1.85
–
V
I = 60 A, T = 25°C
F
F
J
I = 60 A, T = 175°C
F
J
Reverse Recovery Time
T
V
V
= 25°C
= −9 V, 15 V, R
–
ns
nC
A
J
CE
GE
rr
= 600 V, I = 50 A
C
Reverse Recovery Charge
Q
93
–
rr
= 6 W
gon
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
11
–
RRM
di/dt
2767
45
–
A/ms
mJ
E
rr
–
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3
NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
Test Conditions
Symbol
Min
–
Typ
12
Max
–
Unit
ns
Reverse Recovery Time
T
V
V
= 125 °C
t
rr
J
CE
GE
= 600 V, I = 50 A
C
Reverse Recovery Charge
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Q
–
90
–
nC
rr
= −9 V, 15 V, R
= 6 W
gon
I
–
11
–
A
RRM
di/dt
–
2287
32
–
A/ms
mJ
E
rr
–
–
Thermal Resistance −
Chip−to−Heatsink
Thermal grease, Thickness = 2.1 Mil±2%
λ = 2.87 W/mK
R
–
0.68
–
K/W
thJH
Thermal Resistance − Chip−to−Case
THERMISTOR CHARACTERISTICS
Nominal Resistance
R
–
0.438
–
K/W
thJC
T = 25°C
R
−
−
22
1504
−
−
−
1
−
−
−
kW
W
25
Nominal Resistance
T = 100°C
R
100
Deviation of R25
DR/R
−1
−
%
Power Dissipation
P
187.5
1.5
mW
mW/K
K
D
Power Dissipation Constant
B−value
−
B (25/100), tolerance 1%
−
3980
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE
600
500
600
500
400
300
200
400
300
200
100
0
100
0
3.5
2.5
3.0
0
0.5
V
1.0
1.5
2.5
3.0
3.5
1.5
2.0
2.0
0
0.5
V
1.0
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 3. Typical Output Characteristics
Figure 2. Typical Output Characteristics
600
500
600
500
400
300
200
400
300
200
100
0
100
0
0
2
6
8
4
0.0
0.5
1.0
1.5
2.5
3.0
3.5
2.0
V
GE
, GATE−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage Characteristic
120
120
100
80
100
80
60
60
40
20
0
40
20
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.5
V , FORWARD VOLTAGE (V)
F
V , FORWARD VOLTAGE (V)
F
Figure 6. Boots Diode Forward Characteristics
Figure 7. Inverse Diode Forward
Characteristics
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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT AND BOOST DIODE
6000
5000
1600
1200
4000
3000
2000
800
400
0
1000
0
0
20
40
60
100
80
20
80
40
60
100
0
I
C
(A)
I
C
(A)
Figure 9. Typical Turn Off Loss vs. IC
Figure 8. Typical Turn On Loss vs. IC
1600
1400
4000
3500
3000
2500
2000
1500
1200
1000
800
600
400
30
5
15
20
20
5
25
10
25
10
15
R (W)
30
R (W)
g
g
Figure 10. Typical Turn On Loss vs. Rg
Figure 11. Typical Turn Off Loss vs. Rg
60
55
50
50
45
40
35
30
25
45
40
20
15
10
35
30
20
80
100
15
R (W)
20
5
25
60
10
0
40
I
C
(A)
g
Figure 12. Typical Reverse Recovery Energy
Loss vs. IC
Figure 13. Typical Reverse Recovery Energy
Loss vs. Rg
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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT AND BOOST DIODE (CONTINUED)
600
550
140
120
500
450
400
350
300
250
200
150
100
80
60
40
20
100
50
0
0
100
100
20
40
60
20
40
60
0
80
0
80
I , COLLECTOR CURRENT(A)
C
I , COLLECTOR CURRENT (A)
C
Figure 15. Typical Turn−On Switching Time
Figure 14. Typical Turn−Off Switching Time
vs. IC
vs. IC
800
250
200
700
600
500
400
300
200
100
0
150
100
50
0
30
5
25
30
10
20
R , GATE RESISTOR (W)
25
15
5
10
15
20
Rg, GATE RESISTOR (W)
g
Figure 17. Typical Turn−On Switching Time vs.
Figure 16. Typical Turn−Off Switching Time
Rg
vs. Rg
13.5
13
95
90
85
12.5
12
11.5
80
11
10.5
10
75
70
10
15
20
30
25
0
5
5
10
R , GATE RESISTOR (W)
20
25
15
Rg, GATE RESISTOR (W)
g
Figure 18. Typical Reverse Recovery Time vs. Rg
Figure 19. Typical Reverse Recovery Charge
vs. Rg
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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT AND BOOST DIODE (CONTINUED)
12
11
3000
2800
2600
2400
2200
2000
1800
1600
10
9
8
1400
1200
1000
7
6
5
20
25
10
R , GATE RESISTOR (W)
15
5
20
25
10
15
Rg, GATE RESISTOR (W)
g
Figure 21. Typical di/dt vs. Rg
Figure 20. Typical Reverse Recovery Peak
Current vs. Rg
20
18
140
130
120
110
100
90
16
14
80
70
60
50
12
10
0
20
I , COLLECTOR CURRENT(A)
80
100
20
80
I , COLLECTOR CURRENT(A)
40
60
40
60
100
0
C
C
Figure 22. Typical Reverse Recovery Time
vs. Ic
Figure 23. Typical Reverse Recovery Charge
vs. Ic
14
4000
3500
3000
2500
2000
1500
1000
13
12
11
10
9
8
0
20
80
100
80
I , COLLECTOR CURRENT (A)
60
100
40
0
20
40
60
I , COLLECTOR CURRENT (A)
C
C
Figure 24. Typical Reserve Recovery Current vs. Ic
Figure 25. Typical di/dt vs. Ic
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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT
120
1000000
100000
10000
100
80
1000
100
10
60
40
20
1
0.1
0
0
1000
1200
200
800
10
, COLLECTOR TO EMITTER VOLTAGE (V)
400
0.1
600
1
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
Figure 27. Capacitance Charge
Figure 26. RBSOA
15
12
9
1000000
100000
10000
6
3
0
−3
−6
1000
100
−9
−12
−15
100 200
−50
0
0
300 400 500 600 700
CHANGE (nC)
−25
50
75
100
125 150
25
800
TEMPERATURE °C
Figure 28. Gate Voltage vs. Gate Charge
Figure 29. Temperature vs NTC Value
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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE
1
0.1
0.01
0.001
0.0001
0.001
PULSE ON TIME (s)
10
0.01
0.000001
1
0.00001
0.0001
0.1
Figure 30. Transient Thermal Impedance (IGBT )
1
0.1
0.01
0.001
0.001
PULSE ON TIME (s)
10
0.01
0.000001
1
0.00001
0.0001
0.1
Figure 31. Transient Thermal Impedance (BOOST DIODE)
1
0.1
0.01
0.001
0.001
PULSE ON TIME (s)
10
0.01
0.000001
1
0.00001
0.0001
0.1
Figure 32. Transient Thermal Impedance (INVERSE DIODE)
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NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG−R
ORDERING INFORMATION
Device Order Number
Marking
Package
Shipping
NXH600B100H4Q2F2SG,
NXH600B100H4Q2F2SG−R
NXH600B100H4Q2F2SG,
NXH600B100H4Q2F2SG−R
Q2BOOST − Case 180HE
(Pb−Free and Halide−Free Solder Pins)
12 Units / Blister Tray
NXH600B100H4Q2F2PG
NXH600B100H4Q2F2PG
Q2BOOST − Case 180HF
(Pb−Free and Halide−Free Press Fit Pins)
12 Units / Blister Tray
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 93x47 (SOLDER PIN)
CASE 180HE
ISSUE O
DATE 21 OCT 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39002H
PIM44, 93x47 (SOLDER PIN)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 93x47 (SOLDER PIN)
CASE 180HE
ISSUE O
DATE 21 OCT 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
XXXXX = Specific Device Code
= Assembly & Test Site Code
YYWW = Year and Work Week Code
AT
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39002H
PIM44, 93x47 (SOLDER PIN)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
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© Semiconductor Components Industries, LLC, 2021
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 93x47 (PRESS FIT)
CASE 180HF
ISSUE O
DATE 26 OCT 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39004H
PIM44, 93x47 (PRESS FIT)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2021
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 93x47 (PRESS FIT)
CASE 180HF
ISSUE O
DATE 26 OCT 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
XXXXX = Specific Device Code
AT = Assembly & Test Site Code
YYWW = Year and Work Week Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON39004H
PIM44, 93x47 (PRESS FIT)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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