NXH75M65L4Q1SG [ONSEMI]
IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode;
| 型号： | NXH75M65L4Q1SG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode 双极性晶体管 |
| 文件： | 总13页 (文件大小：708K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Q1PACK Module
75 A, 650 V Module
NXH75M65L4Q1SG,
NXH75M65L4Q1PTG
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
PIM27, 71x37.4
(SOLDER PIN)
CASE 180CA
PIM27, 71x37.4
(PRESSFIT PIN)
CASE 180CP
MARKING DIAGRAM
• Q1PACK Packages with Solder and Pressfit Pins
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
7, 8, 25, 26
DC+
YYWW = Year and Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
T12
T14
D20
6
1
G12
G14
5
S12
2
S14
D22
T21
D21
15, 16
Ph2
17, 18
Ph1
T22
D12
D14
T13
T11
14
13
27
20
19
S21 G21
A20
G22 S22
11
22
G11
G13
12
S11
21
S13
NTC
3
4
NTC2
NTC1
9, 10
DC−1
23,24
DC−2
Figure 1. Schematic
Figure 2. Pin Assignments
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2021 − Rev. 1
NXH75M65L4Q1SG/D
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IGBT (T11, T12, T13, T14, T21, T22)
Collector−emitter voltage
V
I
650
59
V
A
CES
Collector current @ T = 80°C (per IGBT)
I
C
h
Pulsed collector current, T
limited by T
176
83
A
pulse
jmax
CM
Power Dissipation Per IGBT
T = T T = 80°C
P
W
tot
j
jmax,
h
Gate−emitter voltage
V
GE
20
V
Maximum Junction Temperature
DIODE (D12, D14, D20, D21, D22)
Peak Repetitive Reverse Voltage
T
175
°C
J
V
650
50
V
A
A
RRM
Forward Current, DC @ T = 80°C (per Diode)
I
F
h
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
225
FSM
Power Dissipation Per Diode
P
tot
86
W
T = T
, T = 80°C
j
jmax
h
Maximum Junction Temperature
THERMAL PROPERTIES
T
J
175
°C
Operating Temperature under switching condition
Storage Temperature range
T
−40 to (T
− 25)
°C
°C
VJ OP
jmax
T
stg
−40 to 125
INSULATION PROPERTIES
Isolation test voltage, t = 2 min, 60 Hz
Creepage distance
V
is
4000
12.7
Vac
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
IGBT (T11, T12, T13, T14, T21, T22)
Collector−emitter cutoff current
Collector−emitter saturation voltage
V
= 0 V, V = 650 V
I
CES
–
–
300
mA
GE
CE
V
GE
V
GE
= 15 V, I = 75 A, T = 25°C
V
V
–
–
1.56
1.76
2.22
–
V
C
j
j
CE(sat)
= 15 V, I = 75 A, T = 150°C
C
Gate−emitter threshold voltage
Gate leakage current
Turn−on delay time
Rise time
V
GE
V
GE
= V , I = 75mA
3.1
–
4.45
–
5.2
400
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
nA
ns
CE
GES
T = 25°C
t
–
38
j
d(on)
V
V
=350 V, I = 80 A
C
CE
GE
t
r
–
34
–
= 15 V, −9 V, R = 10 W
G
Turn−off delay time
Fall time
t
–
129
17
–
d(off)
t
f
–
–
mJ
ns
Turn on switching loss
Turn off switching loss
Turn−on delay time
Rise time
E
E
–
0.606
0.903
37
–
on
off
–
–
T = 125°C
t
t
–
–
j
V
V
d(on)
= 350 V, I = 80 A
C
CE
t
–
34
–
r
= 15 V, −9 V, R = 10 W
GE
G
Turn−off delay time
Fall time
–
139
23
–
d(off)
t
–
–
f
mJ
Turn on switching loss
Turn off switching loss
E
on
E
off
–
1.024
1.141
–
–
–
www.onsemi.com
2
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
IGBT (T11, T12, T13, T14, T21, T22)
Input capacitance
Test Condition
Symbol
Min
Typ
Max
Unit
V
= 30 V, V = 0 V, f = 1 MHz
pF
C
–
–
–
–
–
–
5665
205
–
–
–
–
–
–
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
100
res
V
CE
= 480 V, I = 50 A, V
=
15 V
Q
g
550
nC
C
GE
Thermal grease, Thickness = 2.1 Mil 2%
l = 2.9 W/mK
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
IGBT INVERSE DIODE (D12, D14, D21, D22)
Forward voltage
R
R
1.15
0.75
°C/W
°C/W
thJH
thJC
I = 50 A, T = 25°C
I = 50 A, T = 175°C
V
F
–
–
2.25
1.7
2.7
–
V
F
F
j
j
Reverse Recovery Time
t
–
–
–
–
–
–
–
–
–
–
–
–
63
552
25
–
–
–
–
–
–
–
–
–
–
–
–
ns
nc
rr
Reverse Recovery Current
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Q
rr
T = 25°C
j
V
V
= 350 V, I = 80 A
C
I
A
CE
GE
rrm
= 15 V, −9 V, R = 10 W
G
Di/dt
1.80
136
135
1538
43
A/ms
mJ
max
E
rr
t
rr
ns
Reverse Recovery Current
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
DIODE (D20)
Q
nc
rr
T = 125°C
j
V
V
= 350 V, I = 50 A
C
= 15 V, −9 V, R = 10 W
I
A
CE
GE
rrm
G
Di/dt
1.60
346
1.10
0.79
A/ms
mJ
max
E
rr
Thermal grease, Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
°C/W
°C/W
thJH
thJC
R
Forward voltage
I = 50 A, T = 25°C
V
F
–
–
2.25
1.7
2.7
–
V
F
j
I = 50 A, T = 175°C
F
j
Reverse leakage current
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
THERMISTOR CHARACTERISTICS
Nominal resistance
V
= 650 V, V = 0 V
I
r
–
–
–
–
300
–
mA
CE
GE
Thermal grease, Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
R
1.10
0.79
°C/W
°C/W
thJH
thJC
–
T = 25°C
R
−
−
22
1486
−
−
−
kW
W
25
Nominal resistance
T = 100°C
R
100
Deviation of R25
R/R
−5
−
5
%
Power dissipation
P
D
200
2
−
mW
mW/°C
°C
Power dissipation constant
B−value
−
−
B (25/50), tol 3%
B (25/100), tol 3%
−
−
3950
3998
B
B−value
−
−
°C
NTC reference
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − IGBT (T11, T12, T13, T14, T21, T22)
200
180
160
140
120
100
80
200
T
= 25°C
T = 150°C
J
J
180
160
140
120
100
80
VGE = 7.000V
VGE = 8.000V
VGE = 9.000V
VGE = 10.00V
VGE = 11.00V
VGE = 13.00V
VGE = 15.00V
VGE = 17.00V
VGE = 19.00V
VGE = 20.00V
VGE = 7.000V
VGE = 8.000V
VGE = 9.000V
VGE = 10.00V
VGE = 11.00V
VGE = 13.00V
VGE = 15.00V
VGE = 17.00V
VGE = 19.00V
VGE = 20.00V
60
60
40
40
20
20
0
0
0
1
2
3
4
0
1
2
3
4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Typical Output Characteristics
Figure 4. Typical Output Characteristics
200
180
160
140
120
100
80
160
140
120
100
80
T
T
T
= 25°C
J
J
J
= 125°C
= 150°C
60
60
40
40
T
T
T
= 25°C
= 125°C
= 150°C
J
J
J
20
20
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 5. Typical Transfer Characteristics
Figure 6. Diode Forward Characteristics
TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE
1800
1800
V
V
= +15 V, −9 V
V
V
= +15 V, −9 V
GE
CE
g
GE
CE
g
= 350 V
= 350 V
1600
1400
1200
1000
800
1600
1400
1200
1000
800
R = 10 W
R = 10 W
25°C
125°C
600
600
400
400
25°C
200
0
200
0
125°C
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
I
C
(A)
I (A)
C
Figure 7. Typical Turn ON Loss vs. IC
Figure 8. Typical Turn OFF Loss vs. IC
www.onsemi.com
4
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE (CONTINUED)
2000
1800
1600
1400
1200
1000
800
1400
1300
1200
1100
1000
25°C
125°C
V
V
I
= +15 V, −9 V
V
V
I
= +15 V, −9 V
GE
CE
C
GE
CE
C
= 350 V
= 350 V
= 80 A
= 80 A
25°C
125°C
900
800
600
400
5
10
15
20
25
30
5
10
15
20
25
30
R (W)
g
R (W)
g
Figure 9. Typical Turn ON Loss vs. RG
Figure 10. Typical Turn OFF Loss vs. RG
250
200
150
100
50
V
V
= +15 V, −9 V
GE
CE
g
V
V
= +15 V, −9 V
GE
CE
g
= 350 V
45
40
35
30
= 350 V
R = 10 W
R = 10 W
T
d(on)
T
d(off)
25
20
15
10
5
25°C
125°C
t
r
50
0
25°C
125°C
t
f
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Typical Turn−Off Switching Time vs. IC
Figure 12. Typical Turn−On Switching Time vs. IC
80
240
T
d(off)
V
V
I
= +15 V, −9 V
T
GE
CE
C
d(on)
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
210
180
150
120
90
= 350 V
= 80 A
70
60
50
40
I
= 80 A
t
r
25°C
125°C
60
30
t
f
30
20
25°C
125°C
0
5
10
15
20
25
30
5
10
15
20
25
30
R , GATE RESISTOR (W)
R , GATE RESISTOR (W)
g
g
Figure 13. Typical Turn−Off Switching Time vs. Rg
Figure 14. Typical Turn−On Switching Time vs. Rg
www.onsemi.com
5
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE
1800
1400
1200
1000
800
V
V
= +15 V, −9 V
V
V
= +15 V, −9 V
GE
CE
g
GE
CE
g
= 350 V
= 350 V
1500
1200
900
R = 10 W
R = 10 W
25°C
125°C
25°C
125°C
600
600
400
300
0
200
0
0
20
40
60
I
80
100
120
140
0
20
40
60
I (A)
C
80
100
120
140
(A)
C
Figure 15. Typical Turn ON Loss vs. IC
Figure 16. Typical Turn OFF Loss vs. IC
1800
1300
1200
1100
V
V
C
= +15 V, −9 V
V
V
C
= +15 V, −9 V
GE
CE
GE
CE
= 350 V
= 350 V
1600
1400
1200
1000
800
I
= 80 A
I
= 80 A
25°C
125°C
25°C
125°C
1000
900
600
400
5
10
15
20
25
30
5
10
15
20
25
30
R (W)
g
R (W)
g
Figure 17. Typical Turn ON Loss vs. RG
Figure 18. Typical Turn OFF Loss vs. RG
250
200
150
100
60
50
40
30
20
V
V
= +15 V, −9 V
V
V
= +15 V, −9 V
GE
CE
g
GE
CE
g
= 350 V
= 350 V
R = 10 W
R = 10 W
T
d(on)
T
d(off)
25°C
125°C
t
r
50
0
10
0
25°C
t
f
125°C
0
20
40
60
80
100
120
140
0
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 19. Typical Turn−Off Switching Time vs. IC
Figure 20. Typical Turn−On Switching Time vs. IC
www.onsemi.com
6
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE (CONTINUED)
250
200
150
100
90
V
V
I
= +15 V, −9 V
V
V
I
= +15 V, −9 V
GE
CE
C
GE
CE
C
t
t
d(off)
d(on)
= 350 V
= 350 V
80
= 80 A
= 80 A
70
60
t
r
25°C
125°C
50
40
50
0
25°C
125°C
30
20
t
f
5
10
15
20
25
30
5
10
15
20
25
30
R , GATE RESISTOR (W)
R , GATE RESISTOR (W)
g
g
Figure 21. Typical Turn−Off Switching Time vs. Rg
Figure 22. Typical Turn−On Switching Time vs. Rg
TYPICAL CHARACTERISTICS − DIODE
700
600
500
400
500
450
400
350
V
V
= +15 V, −9 V
V
V
I
= +15 V, −9 V
GE
CE
g
GE
CE
C
= 350 V
= 350 V
R = 10 W
= 80 A
25°C
125°C
300
250
200
150
100
50
300
200
100
0
25°C
125°C
0
0
20
40
60
80
100
120
140
5
10
15
20
25
30
I
C
(A)
R (W)
g
Figure 23. Typical Reverse Recovery Energy Loss vs. IC Figure 24. Typical Reverse Recovery Energy Loss vs. RG
1800
1600
1400
1200
150
130
110
90
V
V
I
= +15 V, −9 V
GE
CE
C
V
V
C
= +15 V, −9 V
25°C
125°C
GE
CE
25°C
125°C
= 350 V
1000
800
600
400
200
0
= 350 V
= 80 A
I
= 80 A
70
50
30
5
10
15
20
25
30
5
10
15
20
25
30
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 25. Typical Reverse Recovery Time vs. Rg
Figure 26. Typical Reverse Recovery Charge vs. Rg
www.onsemi.com
7
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL CHARACTERISTICS − DIODE (CONTINUED)
50
45
40
35
30
25
20
2.0
V
V
C
= +15 V, −9 V
GE
CE
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
1.9
1.8
1.7
1.6
1.5
1.4
= 350 V
I
= 80 A
I
= 80 A
1.3
1.2
1.1
1.0
25°C
125°C
25°C
125°C
15
10
5
10
15
20
25
30
5
10
15
20
25
30
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 27. Typical Reverse Recovery Peak Current vs. Rg
Figure 28. Typical di/dt vs. Rg
TYPICAL CHARACTERISTICS
15
160
140
120
100
80
V
I
= 350 V
= 75 A
CE
13
11
9
C
7
5
3
1
−1
−3
−5
−7
60
40
−9
−11
−13
−15
20
0
V
= +15 V −9 V, T = T − 25°C,
jmax
GE
Goff
J
R
= 40 W
0
100
200
300
400
500
600
700
0
50
100
150
200
250
300
Qg, Gate Charge (nC)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 29. RBSOA Reverse Safe Operating Area
Figure 30. IGBT Gate Charge
1000
100
100 ms
10
1
50 ms
1 ms
Single Nonrepetitive Pulse T = 25°C,
Curves must be derated linearly with
increase in temperature
C
DC
0.1
1
10
100
1000
V
CE
COLLECTOR−EMITTER VOLTAGE (V)
Figure 31. IGBT Safe Operating Area
www.onsemi.com
8
NXH75M65L4Q1SG, NXH75M65L4Q1PTG
TYPICAL THERMAL CHARACTERISTICS
10.0E+0
1.0E+0
Single pulse
@ 1% duty cycle
@ 2% duty cycle
@ 5% duty cycle
@ 10% duty cycle
@ 20% duty cycle
@ 50% duty cycle
100.0E−3
10.0E−3
100.0E−6
1.0E−3
10.0E−3
100.0E−3
1.0E+0
10.0E+0
100.0E+0
PULSE ON TIME (s)
Figure 32. Transient Thermal Impedance – IGBT
10.0E+0
1.0E+0
Single pulse
@ 1% duty cycle
@ 2% duty cycle
@ 5% duty cycle
@ 10% duty cycle
@ 20% duty cycle
@ 50% duty cycle
100.0E−3
10.0E−3
100.0E−6
1.0E−3
10.0E−3
1.0E+0
10.0E+0
100.0E+0
100.0E−3
PULSE ON TIME (s)
Figure 33. Transient Thermal Impedance – Diode
ORDERING INFORMATION
Device
Package Type
Shipping
NXH75M65L4Q1SG (Solder Pin)
PIM27, 71x37.4
Q1PACK
21 Units / BTRAY
NXH75M65L4Q1PTG (Pressfit Pin)
PIM27, 71x37.4
Q1PACK
21 Units / BTRAY
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (SOLDER PIN)
CASE 180CA
ISSUE B
DATE 14 DEC 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20006H
PIM27, 71X37.4 (SOLDER PIN)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (SOLDER PIN)
CASE 180CA
ISSUE B
DATE 14 DEC 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
XXXXX = Specific Device Code
G
= Pb−Free Device
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20006H
PIM27, 71X37.4 (SOLDER PIN)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (PRESSFIT PIN)
CASE 180CP
ISSUE A
DATE 20 DEC 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26650H
PIM27, 71X37.4 (PRESSFIT PIN)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明