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NXH80T120L2Q0S2G/S2TG,

NXH80T120L2Q0P2G

Q0PACK Module

The NXH80T120L2Q0S2/P2G is a power module containing a

T−type neutral point clamped (NPC) three level inverter stage. The

integrated field stop trench IGBTs and fast recovery diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

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Features

• Low Switching Loss

• Low V

CESAT

• Compact 65.9 mm x 32.5 mm x 12 mm Package

• Thermistor

• Options with pre−applied thermal interface material (TIM) and

without pre−applied TIM

Q0PACK

CASE 180AA

PRESS−FIT PINS

Q0PACK

CASE 180AB

SOLDERABLE PINS

• Options with solderable pins and press−fit pins

Typical Applications

• Solar Inverter

• Uninterruptable Power Supplies

MARKING DIAGRAMS

NXH80T120L2Q0P2G

ATYYWW

15,16

Half Bridge

IGBTs & Diodes

D1

T1

1200V/80A

17

18

NXH80T120L2Q0S2G

ATYYWW

D2

T2

D3

5,14

8,9,10,11

NXH80T120L2Q0S2G = Specific Device Code

G = Pb−free Package

A = Assembly Site Code

T3

7

6

13 12

T = Test Site Code

YYWW = Year and Work Week Code

Neutral Point

IGBTs & Diodes

650V/50A

D4

T4

2

PIN ASSIGNMENTS

1

19

20

3,4

NTC

12 13 14

15 16

4 3

17 18

19

Figure 1. Schematic Diagram

11

10

9

20

8

7 6

5

2 1

ORDERING INFORMATION

See detailed ordering and shipping information in the

dimensions section on page 13 of this data sheet.

1

Publication Order Number:

NXH80T120L2Q0S2G/D

May, 2019 − Rev. 6

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

Table 1. MAXIMUM RATINGS

Rating

Symbol

Value

Unit

HALF BRIDGE IGBT

Collector−Emitter Voltage

Gate−Emitter Voltage

V

1200

20

V

CES

V

GE

Continuous Collector Current @ T = 80°C (T = 175°C)

I

C

67

A

h

J

Pulsed Collector Current (T = 175°C)

I

201

158

5

A

J

Cpulse

Maximum Power Dissipation @ T = 80°C (T = 175°C)

P

tot

W

ms

°C

h

J

Short Circuit Withstand Time @ V = 15 V, V = 600 V, T v 150°C

T

sc

GE

CE

J

Minimum Operating Junction Temperature

T

−40

150

JMIN

Maximum Operating Junction Temperature

NEUTRAL POINT IGBT

T

JMAX

Collector−Emitter Voltage

V

600

20

V

CES

Gate−Emitter Voltage

V

GE

Continuous Collector Current @ T = 80°C (T = 175°C)

I

C

49

A

h

J

Pulsed Collector Current (T = 175°C)

I

147

86

A

J

Cpulse

Maximum Power Dissipation @ T = 80°C (T = 175°C)

P

tot

W

ms

°C

h

J

Short Circuit Withstand Time @ V = 15 V, V = 400 V, T v 150°C

T

sc

5

GE

CE

J

Minimum Operating Junction Temperature

T

−40

150

JMIN

Maximum Operating Junction Temperature

HALF BRIDGE DIODE

T

JMAX

Peak Repetitive Reverse Voltage

V

1200

28

V

A

RRM

Continuous Forward Current @ T = 80°C (T = 175°C)

I

F

h

J

Repetitive Peak Forward Current (T = 175°C, t limited by T

)

I

FRM

84

A

J

p

Jmax

Maximum Power Dissipation @ T = 80°C (T = 175°C)

P

tot

73

W

°C

h

J

Minimum Operating Junction Temperature

T

JMIN

−40

150

Maximum Operating Junction Temperature

NEUTRAL POINT DIODE

T

JMAX

Peak Repetitive Reverse Voltage

V

650

33

V

A

RRM

Continuous Forward Current @ T = 80°C (T = 175°C)

I

F

h

J

Repetitive Peak Forward Current (T = 175°C, t limited by T

)

I

FRM

99

A

J

p

Jmax

Maximum Power Dissipation @ T = 80°C (T = 175°C)

P

tot

63

W

°C

h

J

Minimum Operating Junction Temperature

T

JMIN

−40

150

Maximum Operating Junction Temperature

THERMAL PROPERTIES

T

JMAX

Storage Temperature range

T

stg

−40 to 125

°C

INSULATION PROPERTIES

Isolation test voltage, t = 1 sec, 60 Hz

Creepage distance

V

is

3000

12.7

V

RMS

mm

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

Table 2. RECOMMENDED OPERATING RANGES

Rating

Symbol

Min

Max

Unit

Module Operating Junction Temperature

T

J

−40

150

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

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2

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted

J

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

HALF BRIDGE IGBT CHARACTERISTICS

Collector−Emitter Cutoff Current

Collector−Emitter Saturation Voltage

V

= 0 V, V = 1200 V

I

CES

–

2.05

2.10

5.45

–

300

2.85

–

mA

GE

CE

V

= 15 V, I = 80 A, T = 25°C

V

GE

C

J

CE(sat)

V

GE

= 15 V, I = 80 A, T = 150°C

C J

Gate−Emitter Threshold Voltage

Gate Leakage Current

Turn−on Delay Time

V

= V , I = 1.5 mA

6.4

300

–

V

GE

CE

C

GE(TH)

V

= 20 V, V = 0 V

I

GES

nA

ns

GE

CE

T = 25°C

t

61

J

d(on)

V

= 350 V, I = 60 A

CE

C

Rise Time

t

r

28

–

= 15V, R = 4.7 W

G

GE

Turn−off Delay Time

t

205

41

–

d(off)

Fall Time

t

f

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

E

550

1100

58

–

mJ

on

off

E

–

T = 125°C

t

–

ns

J

d(on)

V

= 350 V, I = 60 A

CE

C

Rise Time

t

r

30

–

= 15 V, R = 4.7 W

G

GE

Turn−off Delay Time

230

63

–

d(off)

Fall Time

t

f

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Input Capacitance

E

on

E

off

720

1700

19400

400

340

800

0.60

–

mJ

–

V

CE

= 20 V, V = 0 V, f = 10 kHz

C

–

pF

GE

ies

oes

Output Capacitance

C

–

Reverse Transfer Capacitance

Total Gate Charge

C

–

res

V

= 600 V, I = 80 A, V = +15 V

Q

g

–

nC

CE

C

GE

Thermal Resistance − chip−to−heatsink

Thermal grease,

Thickness = 76 mm 2%, l = 2.9 W/mK

R

–

°C/W

thJH

NEUTRAL POINT DIODE CHARACTERISTICS

Diode Forward Voltage

I = 60 A, T = 25°C

V

F

–

1.7

1.6

2.2

–

V

F

J

I = 60 A, T = 150°C

F

J

Reverse Recovery Time

T = 25°C

t

rr

39

–

ns

mC

A

J

V

CE

= 350 V, I = 60 A

C

Reverse Recovery Charge

Q

rr

RRM

1.1

–

V

= 15 V, R = 4.7 W

G

GE

Peak Reverse Recovery Current

Peak Rate of Fall of Recovery Current

Reverse Recovery Energy

I

48

–

di/dt

3400

400

78

–

A/ms

mJ

E

rr

–

Reverse Recovery Time

T = 125°C

t

rr

–

ns

J

V

CE

= 350 V, I = 60 A

C

Reverse Recovery Charge

Q

rr

RRM

2.0

–

mC

A

V

= 15 V, R = 4.7 W

G

GE

Peak Reverse Recovery Current

Peak Rate of Fall of Recovery Current

Reverse Recovery Energy

I

59

–

di/dt

1600

550

1.50

–

A/ms

mJ

E

rr

–

Thermal Resistance − chip−to−heatsink

Thermal grease,

Thickness = 76 mm 2%, l = 2.9 W/mK

R

–

°C/W

thJH

NEUTRAL POINT IGBT CHARACTERISTICS

Collector−Emitter Cutoff Current

V

= 0 V, V = 600 V

I

–

250

1.75

–

mA

GE

CE

CES

Collector−Emitter Saturation Voltage

V

= 15 V, I = 50 A, T = 25°C

V

1.40

1.50

5.45

–

V

GE

C

J

CE(sat)

V

GE

= 15 V, I = 50 A, T = 150°C

C J

Gate−Emitter Threshold Voltage

V

GE

= V , I = 1.2 mA

6.4

200

V

CE

C

GE(TH)

Gate Leakage Current

V

= 20 V, V = 0 V

I

GES

nA

GE

CE

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3

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted

J

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

NEUTRAL POINT IGBT CHARACTERISTICS

Turn−on Delay Time

T = 25°C

t

–

ns

J

d(on)

30

19

V

= 350 V, I = 60 A

CE

C

Rise Time

t

r

V

GE

= 15 V, R = 4.7 W

G

Turn−off Delay Time

Fall Time

t

110

23

d(off)

t

f

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

Rise Time

E

on

mJ

800

480

32

E

off

T = 125°C

t

ns

J

d(on)

V

CE

= 350 V, I = 60 A

C

t

r

18

V

GE

= 15 V, R = 4.7 W

G

Turn−off Delay Time

Fall Time

120

35

d(off)

t

f

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

E

on

mJ

1100

E

off

880

9400

280

Input Capacitance

V

= 20 V, V = 0 V, f = 10 kHz

C

–

pF

CE

GE

ies

Output Capacitance

C

oes

Reverse Transfer Capacitance

Total Gate Charge

C

250

res

V

CE

= 480 V, I = 50 A, V = +15 V

Q

g

395

nC

C

GE

Thermal Resistance − chip−to−heatsink

Thermal grease,

Thickness = 76 mm 2%, l = 2.9 W/mK

R

1.10

°C/W

thJH

HALF BRIDGE DIODE CHARACTERISTICS

Diode Forward Voltage

I = 40 A, T = 25°C

V

F

–

2.11

1.50

45

3.10

–

V

F

J

I = 40 A, T = 150°C

F

J

Reverse recovery time

T = 25°C

t

rr

–

ns

mC

A

J

V

CE

= 350 V, I = 60 A

C

Reverse recovery charge

Q

rr

RRM

2.7

–

V

= 15 V, R = 4.7 W

G

GE

Peak reverse recovery current

Peak rate of fall of recovery current

Reverse recovery energy

I

110

–

di/dt

7100

1000

185

6

–

A/ms

mJ

E

rr

–

Reverse recovery time

T = 125°C

t

rr

–

ns

J

V

CE

= 350 V, I = 60 A

C

Reverse recovery charge

Q

rr

RRM

–

mC

A

V

= 15 V, R = 4.7 W

G

GE

Peak reverse recovery current

Peak rate of fall of recovery current

Reverse recovery energy

I

150

5900

1900

1.30

–

di/dt

–

A/ms

mJ

E

rr

–

Thermal Resistance − chip−to−heatsink

Thermal grease,

Thickness = 76 mm 2%, l = 2.9 W/mK

R

–

°C/W

thJH

THERMISTOR CHARACTERISTICS

Nominal resistance

Deviation of R25

T = 25°C

R

–

22

1486

–

5

–

kW

W

25

T = 100°C

R

100

DR/R

−5

–

%

Power dissipation

Power dissipation constant

B−value

P

200

2

mW

mW/K

K

D

–

B(25/50), tolerance 3%

B(25/100), tolerance 3%

–

3950

3998

B−value

–

K

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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4

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode

300

250

200

150

100

300

V

= 20 V to 13 V

GE

T = 25°C

11 V

J

250

200

150

100

11 V

10 V

V

GE

= 20 V to 13 V

T = 150°C

J

10 V

9 V

8 V

7 V

50

0

50

0

8 V

7 V

0

1

2

3

4

5

0

1

2

3

4

5

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 2. Typical Output Characteristics

Figure 3. Typical Output Characteristics

180

160

140

120

100

80

100

90

80

70

60

50

40

30

20

60

T = 150°C

J

T = 25°C

J

40

T = 150°C

T = 25°C

J

20

0

10

0

3

6

9

12

15

0

0.5

1.0

1.5

2.0

2.5

V

GE

, GATE−EMITTER VOLTAGE (V)

V , FORWARD VOLTAGE (V)

F

Figure 4. Typical Transfer Characteristics

Figure 5. Diode Forward Characteristics

Figure 6. Typical Turn On Loss vs. IC

Figure 7. Typical Turn Off Loss vs. IC

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5

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode

Figure 8. Typical On Switching Times vs. IC

Figure 9. Typical Off Switching Times vs. IC

Figure 10. Typical On Rise Times vs. IC

Figure 11. Typical Off Fall Times vs. IC

Figure 12. Typical Reverse Recovery Time vs.

IC

Figure 13. Typical Reverse Recovery Charge

vs. IC

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode

Figure 14. Typical Reverse Recovery Peak

Current vs. IC

Figure 15. Typical Diode Current Slope vs. IC

16

14

12

10

8

6

4

V

= 600 V

= 80 A

CE

2

0

I

C

0

200

400

600

800

1000

Q , GATE CHARGE (nC)

G

Figure 16. Typical Reverse Recovery Energy

vs. IC

Figure 17. Gate Voltage vs. Gate Charge

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Half Bridge IGBT and Neutral Point Diode

1

50%

20%

10%

5%

0.1

2%

1%

0.01

Single Pulse

0.0001

0.001

0.00001

0.001

0.01

0.1

1

10

PULSE ON TIME (s)

Figure 18. IGBT Transient Thermal Impedance

10

1

50%

20%

10%

5%

0.1

2%

1%

Single Pulse

0.0001

0.01

0.00001

0.001

0.01

0.1

1

10

PULSE ON TIME (s)

Figure 19. Diode Transient Thermal Impedance

1000

100

10

200

180

160

140

120

100

80

50 ms

100 ms

dc operation

Single Nonrepetitive

60

1 ms

Pulse T = 25°C

C

1

40

Curves must be derated

linearly with increase in

temperature

20

V

GE

=

15 V, T = T

− 25°C

J

Jmax

0.1

0

1.0

10

100

1000

10000

0

200

400

600

800

1000 1200 1400

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 20. T1 & T4 FBSOA

Figure 21. T1 & T4 RBSOA

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode

300

250

200

150

100

300

V

= 20 V to 15 V

GE

V

= 20 V to 17 V

GE

15 V

13 V

250

200

150

100

13 V

T = 25°C

J

T = 150°C

J

11 V

10 V

11 V

10 V

9 V

8 V

7 V

50

0

50

0

7 V

9 V

8 V

0

1

2

3

4

5

0

1

2

3

4

5

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 22. Typical Output Characteristics

Figure 23. Typical Output Characteristics

180

160

140

120

100

80

100

90

80

70

60

50

40

30

20

60

T = 150°C

J

T = 25°C

J

40

T = 150°C

T = 25°C

J

20

0

10

0

3

6

9

12

15

0

0.5

1.0

1.5

2.0

2.5

3.0

V

GE

, GATE−EMITTER VOLTAGE (V)

V , FORWARD VOLTAGE (V)

F

Figure 24. Typical Transfer Characteristics

Figure 25. Diode Forward Characteristics

Figure 26. Typical Turn On Loss vs. IC

Figure 27. Typical Turn Off Loss vs. IC

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode

Figure 28. Typical On Switching Times vs. IC

Figure 29. Typical Off Switching Times vs. IC

Figure 30. Typical On Rise Times vs. IC

Figure 31. Typical Off Fall Times vs. IC

Figure 32. Typical Reverse Recovery Time vs.

IC

Figure 33. Typical Reverse Recovery Charge

vs. IC

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode

Figure 34. Typical Reverse Recovery Peak

Current vs. IC

Figure 35. Typical Diode Current Slope vs. IC

16

14

12

10

8

6

4

V

= 480 V

= 50 A

CE

2

0

I

C

0

200

400

600

800

1000

Q , GATE CHARGE (nC)

G

Figure 36. Typical Reverse Recovery Energy

vs. IC

Figure 37. Gate Voltage vs. Gate Charge

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Neutral Point IGBT and Half Bridge Diode

10

1

50%

20%

10%

5%

0.1

2%

1%

0.01

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

PULSE ON TIME (s)

Figure 38. IGBT Transient Thermal Impedance

10

1

50%

20%

10%

5%

0.1

2%

1%

Single Pulse

0.0001

0.01

0.00001

0.001

0.01

0.1

1

10

PULSE ON TIME (s)

Figure 39. Diode Transient Thermal Impedance

180

160

1000

100

10

140

50 ms

120

100

100 ms

1 ms

80

60

40

20

0

Single Nonrepetitive

Pulse T = 25°C

1

C

Curves must be derated

linearly with increase in

temperature

dc operation

100

V

GE

=

15 V, T = T − 25°C

Jmax

J

0.1

1.0

10

1000

0

100

200

300

400

500

600

700 800

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 40. T2 & T3 FBSOA

Figure 41. T2 & T3 RBSOA

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

TYPICAL CHARACTERISTICS − Thermistor

24K

20K

16K

12K

8K

4K

0

25

45

65

85

105

125

TEMPERATURE (°C)

Figure 42. Thermistor Characteristics

ORDERING INFORMATION

Orderable Part Number

NXH80T120L2Q0P2G

Marking

Package

Shipping

NXH80T120L2Q0P2G

Q0PACK − Case 180AA

(Pb−Free and Halide−Free)

24 Units / Blister Tray

NXH80T120L2Q0S2G

NXH80T120L2Q0S2TG

NXH80T120L2Q0S2G

NXH80T120L2Q0S2TG

Q0PACK − Case 180AB

24 Units / Blister Tray

(Pb−Free and Halide−Free)

Q0PACK − Case 180AB

with pre−applied thermal interface material

(TIM)

(Pb−Free and Halide−Free)

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

PACKAGE DIMENSIONS

PIM20, 55x32.5 / Q0PACK

CASE 180AA

ISSUE D

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

PACKAGE DIMENSIONS

PIM20, 55x32.5 / Q0PACK

CASE 180AB

ISSUE D

www.onsemi.com

15

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

PACKAGE DIMENSIONS

PIM20, 55x32.5 / Q0PACK

CASE 180AB

ISSUE D

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型号：	NXH80T120L2Q0P2TG
厂家：	ONSEMI
描述：	功率集成模块 (PIM)，T 型 NPC 1200 V，80 A IGBT，600 V，50 A IGBT PC 双极性晶体管
文件：	总17页 (文件大小：777K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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