NXH80T120L3Q0S3TG [ONSEMI]
Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT;
| 型号： | NXH80T120L3Q0S3TG |
| 厂家： | 
ONSEMI |
| 描述： | Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT PC 双极性晶体管 |
| 文件： | 总20页 (文件大小：1769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Q0PACK Module
Product Preview
NXH80T120L3Q0S3G/S3TG,
NXH80T120L3Q0P3G
The NXH80T120L3Q0S3/P3G is a power module containing a
T−type neutral point clamped (NPC) three level inverter stage. The
integrated field stop trench IGBTs and fast recovery diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
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Features
• Low Switching Loss
• Low V
CESAT
• Compact 65.9 mm x 32.5 mm x 12 mm Package
• Options with Pre−applied Thermal Interface Material (TIM) and
Without Pre−applied TIM
• Options with Solderable Pins and Press−fit Pins
• Thermistor
Q0PACK
CASE 180AA
PRESS−FIT PINS
Q0PACK
CASE 180AB
SOLDERABLE PINS
MARKING DIAGRAMS
Typical Applications
• Solar Inverter
• Uninterruptable Power Supplies
NXH80T120L3Q0S3xG
ATYYWW
15,16
NXH80T120L3Q0P3G
ATYYWW
Half Bridge
IGBTs & Diodes
D1
T1
17
18
NXH80T120L3Q0S3G = Specific Device Code
S3xG = S3G or S3TG
G = Pb−free Package
A = Assembly Site Code
T = Test Site Code
D2
T2
D3
T3
5,14
8,9,10,11
YYWW = Year and Work Week Code
7
6
13 12
Neutral Point
IGBTs & Diodes
PIN ASSIGNMENTS
D4
T4
2
1
12 13 14
15 16
17 18
19
19
20
11
10
9
3,4
NTC
20
Figure 1. Schematic Diagram
8
7 6
5
4 3
2 1
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
See detailed ordering and shipping information in the
dimensions section on page 16 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
NXH80T120L3Q0S3G/D
May, 2020 − Rev. P3
NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
Table 1. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
HALF BRIDGE IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
CES
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
75
A
c
J
Pulsed Collector Current (T = 175°C)
I
225
188
−40
175
A
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
tot
W
°C
°C
J
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT IGBT
T
JMIN
T
JMAX
Collector−Emitter Voltage
V
650
20
V
V
CES
Gate−Emitter Voltage
V
GE
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
50
A
c
J
Pulsed Collector Current (T = 175°C)
I
150
82
A
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
tot
W
°C
°C
J
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
HALF BRIDGE DIODE
T
−40
150
JMIN
T
JMAX
Peak Repetitive Reverse Voltage
V
1200
37
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (T = 175°C)
I
111
79
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE
T
−40
175
JMIN
T
JMAX
Peak Repetitive Reverse Voltage
V
650
37
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (T = 175°C)
I
111
68
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
−40
150
JMIN
T
JMAX
Maximum Operating Junction Temperature under Switching Conditions
Storage Temperature Range
T
150
°C
°C
°C
VJOP
T
−40 to 125
−25 to 40
stg
Storage Temperature Range (TIM)
INSULATION PROPERTIES
T
stg
Isolation test voltage, t = 1 sec, 50 Hz
Creepage distance
V
is
4000
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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2
NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
Table 2. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
= 0 V, V = 1200 V
I
CES
−
−
−
4.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.7
300
2.4
−
mA
GE
CE
V
= 15 V, I = 80 A, T = 25°C
V
V
V
GE
C
J
CE(sat)
V
GE
= 15 V, I = 80 A, T = 150°C
1.8
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
= V , I = 2 mA
5.6
6.5
300
−
V
GE
GE
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
−
nA
ns
CE
GES
T = 25°C
t
51
J
d(on)
V
V
= 350 V, I = 60 A
CE
C
Rise Time
t
r
27
−
= 15 V, R = 4.7 W
G
GE
Turn−off Delay Time
t
200
40
−
d(off)
Fall Time
t
f
−
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
0.74
1.41
45
−
mJ
ns
on
off
E
−
T = 125°C
t
t
−
J
d(on)
V
V
= 350 V, I = 60 A
CE
C
Rise Time
t
r
30
−
= 15 V, R = 4.7 W
G
GE
Turn−off Delay Time
230
110
1.11
2.17
18150
345
295
817
0.51
−
d(off)
Fall Time
t
f
−
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
−
mJ
pF
−
V
CE
= 20 V, V = 0 V, f = 10 kHz
C
−
GE
ies
oes
Output Capacitance
C
−
Reverse Transfer Capacitance
Total Gate Charge
C
−
res
V
= 600 V, I = 80 A, V
=
15 V
Q
g
−
nC
CE
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness = 76 mm, l = 2.9 W/mK
R
−
°C/W
thJH
NEUTRAL POINT DIODE CHARACTERISTICS
Diode Forward Voltage
I = 50 A, T = 25°C
V
F
−
−
−
−
−
−
−
−
−
−
−
−
−
1.38
1.27
32
2.1
−
V
F
J
I = 50 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
−
ns
mC
A
J
V
CE
= 350 V, I = 60 A
C
Reverse Recovery Charge
Q
rr
RRM
1.35
64
−
V
= 15 V, R = 4.7 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
−
di/dt
1100
280
85
−
A/ms
mJ
E
rr
−
Reverse Recovery Time
T = 125°C
t
rr
−
ns
J
V
CE
= 350 V, I = 60 A
C
Reverse Recovery Charge
Q
rr
RRM
3
−
mC
A
V
= 15 V, R = 4.7 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
78
−
di/dt
6500
1390
1.39
−
A/ms
mJ
E
rr
−
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness = 76 mm, l = 2.9 W/mK
R
−
°C/W
thJH
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
V
= 0 V, V = 600 V
I
−
−
−
3
−
−
1.0
0.93
3.6
−
200
1.4
−
mA
GE
CE
CES
Collector−Emitter Saturation Voltage
V
= 15 V, I = 50 A, T = 25°C
V
V
V
GE
C
J
CE(sat)
V
GE
= 15 V, I = 50 A, T = 150°C
C J
Gate−Emitter Threshold Voltage
V
GE
= V , I = 250 mA
5
V
CE
C
GE(TH)
Gate Leakage Current
V
= 20 V, V = 0 V
I
GES
500
nA
GE
CE
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
Table 2. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
NEUTRAL POINT IGBT CHARACTERISTICS
Turn−on Delay Time
Test Conditions
Symbol
Min
Typ
Max
Unit
T = 25°C
t
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
65
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
V
= 350 V, I = 60 A
CE
C
Rise Time
t
r
= 15 V, R = 20 W
G
GE
Turn−off Delay Time
660
20
d(off)
Fall Time
t
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
on
E
off
1.37
0.9
mJ
ns
T = 125°C
t
t
70
J
d(on)
V
V
= 350 V, I = 60 A
CE
C
Rise Time
t
r
28
= 15 V, R = 20 W
G
GE
Turn−off Delay Time
720
30
d(off)
Fall Time
t
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
2.45
1.0
mJ
pF
V
= 20 V, V = 0 V, f = 10 kHz
C
16881
107
94
CE
GE
ies
oes
Output Capacitance
C
Reverse Transfer Capacitance
Total Gate Charge
C
res
V
CE
= 480 V, I = 50 A, V
=
15 V
Q
g
830
1.16
nC
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness = 76 mm, l = 2.9 W/mK
R
°C/W
thJH
HALF BRIDGE DIODE CHARACTERISTICS
Diode Forward Voltage
I = 40 A, T = 25°C
V
F
−
−
−
−
−
−
−
−
−
−
−
−
−
2.43
1.63
45
3.10
−
V
F
J
I = 40 A, T = 150°C
F
J
Reverse recovery time
T = 25°C
t
rr
−
ns
mC
A
J
V
CE
= 350 V, I = 60 A
C
Reverse recovery charge
Q
rr
RRM
2
−
V
= 15 V, R = 62 W
G
GE
Peak reverse recovery current
Peak rate of fall of recovery current
Reverse recovery energy
I
140
860
310
75
−
di/dt
−
A/ms
mJ
E
rr
−
Reverse recovery time
T = 125°C
t
rr
−
ns
J
V
CE
= 350 V, I = 60 A
C
Reverse recovery charge
Q
rr
RRM
5.5
125
740
640
1.2
−
mC
A
V
= 15 V, R = 62 W
G
GE
Peak reverse recovery current
Peak rate of fall of recovery current
Reverse recovery energy
I
−
di/dt
−
A/ms
mJ
E
rr
−
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness = 76 mm, l = 2.9 W/mK
R
−
°C/W
thJH
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
R
R
−
−
22
1468
−
−
−
kW
W
T = 100°C
DR/R
−5
−
5
%
Power dissipation
Power dissipation constant
B−value
P
D
200
2
−
mW
mW/K
K
−
−
B(25/50), tolerance 3%
B(25/100), tolerance 3%
−
−
3950
3998
B
B−value
−
−
K
NTC reference
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
240
200
160
120
240
11 V
11 V
10 V
V
= 12 to 19 V
T = 25°C
GS
J
200
160
120
80
V
GS
= 12 to 19 V
10 V
9 V
T = 150°C
J
9 V
80
8 V
7 V
40
0
40
0
8 V
7 V
0
1
2
3
4
0
1
2
3
4
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
160
140
120
100
80
120
100
80
60
40
T = 150°C
J
T = 25°C
J
T = 150°C
J
T = 25°C
J
60
40
20
0
20
0
0
5
10
15
0
1
2
3
4
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 4. Typical Transfer Characteristics
Figure 5. Typical Diode Forward
Characteristics
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
PULSE ON TIME (s)
0.1
1
10
Figure 6. Transient Thermal Impedance (Half Bridge IGBT)
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND DIODE
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 7. Transient Thermal Impedance (Half Bridge Diode)
1K
100
10
16
V
I
= 600 V
= 80 A
= 15 V
CE
14
12
10
8
C
50 ms
100 ms
V
GE
1 ms
6
dc operation
Single Nonrepetitive
1
4
Pulse T = 25°C
C
Curves must be derated linearly
with increase in temperature
2
0
0.1
1
10
100
1K
10K
0
300
600
900
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 8. FB Safe Operating Area
Figure 9. Gate Voltage vs. Gate Charge
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
150
120
90
150
V
= 6 to 18 V
GS
V
= 6 to 18 V
GS
5.6 V
120
90
5.0 V
T = 25°C
J
T = 150°C
J
5.4 V
5.2 V
4.8 V
4.6 V
60
60
30
0
30
0
4.4 V
4.2 V
5.0 V
4.8 V
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
2.5
10
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 10. Typical Output Characteristics
Figure 11. Typical Output Characteristics
150
120
150
120
90
90
60
T = 150°C
J
T = 25°C
J
60
T = 150°C
J
T = 25°C
J
30
0
30
0
0
2
4
6
8
0
0.5
1.0
1.5
2.0
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 12. Typical Transfer Characteristics
Figure 13. Typical Diode Forward
Characteristics
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
PULSE ON TIME (s)
0.1
1
Figure 14. Transient Thermal Impedance (Neutral Point IGBT)
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND DIODE
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
PULSE ON TIME (s)
Figure 15. Transient Thermal Impedance (Neutral Point Diode)
1K
16
V
I
= 480 V
= 75 A
= 15 V
CE
14
12
10
8
C
V
GE
50 ms
100
100 ms
1 ms
10
6
dc operation
Single Nonrepetitive
1
4
Pulse T = 25°C
C
Curves must be derated linearly
with increase in temperature
2
0
0.1
1
10
100
1K
10K
0
1000
2000
3000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 16. FB Safe Operating Area
Figure 17. Gate Voltage vs. Gate Charge
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE
Figure 18. Typical Turn On Loss vs. IC
Figure 19. Typical Turn On Loss vs. RG
Figure 20. Typical Turn Off Loss vs. IC
Figure 21. Typical Turn Off Loss vs. RG
Figure 22. Typical Switching Times Tdon vs. IC
Figure 23. Typical Switching Times Tdon vs.
RG
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE
Figure 24. Typical Switching Times Tdoff vs. IC
Figure 26. Typical Switching Times Tron vs. IC
Figure 28. Typical Switching Times Tf vs. IC
Figure 25. Typical Switching Times Tdoff vs.
RG
Figure 27. Typical Switching Times Tron vs.
RG
Figure 29. Typical Switching Times Tf vs. RG
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE
Figure 30. Typical Reverse Recovery Energy
vs. IC
Figure 31. Typical Reverse Recovery Energy
vs. RG
Figure 32. Typical Reverse Recovery Time vs.
IC
Figure 33. Typical Reverse Recovery Time vs.
RG
Figure 34. Typical Reverse Recovery Charge
vs. IC
Figure 35. Typical Reverse Recovery Charge
vs. RG
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE
Figure 36. Typical Reverse Recovery Current
vs. IC
Figure 37. Typical Reverse Recovery Current
vs. RG
Figure 38. Typical di/dt vs. IC
Figure 39. Typical di/dt vs. RG
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE
Figure 40. Typical Turn On Loss vs. IC
Figure 41. Typical Turn On Loss vs. RG
Figure 42. Typical Turn Off Loss vs. IC
Figure 43. Typical Turn Off Loss vs. RG
Figure 44. Typical Switching Times Tdon vs. IC
Figure 45. Typical Switching Times Tdon vs.
RG
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE
Figure 46. Typical Switching Times Tdoff vs. IC
Figure 48. Typical Switching Times Tron vs. IC
Figure 50. Typical Switching Times Tf vs. IC
Figure 47. Typical Switching Times Tdoff vs.
RG
Figure 49. Typical Switching Times Tron vs.
RG
Figure 51. Typical Switching Times Tf vs. RG
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NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE
Figure 52. Typical Reverse Recovery Energy
vs. IC
Figure 53. Typical Reverse Recovery Energy
vs. RG
Figure 54. Typical Reverse Recovery Time vs.
IC
Figure 55. Typical Reverse Recovery Time vs.
RG
Figure 56. Typical Reverse Recovery Charge
vs. IC
Figure 57. Typical Reverse Recovery Charge
vs. RG
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15
NXH80T120L3Q0S3G/S3TG, NXH80T120L3Q0P3G
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE
Figure 58. Typical Reverse Recovery Current
vs. IC
Figure 59. Typical Reverse Recovery Current
vs. RG
Figure 60. Typical di/dt vs IC
ORDERING INFORMATION
Figure 61. Typical di/dt vs RG
Orderable Part Number
Marking
Package
Shipping
NXH80T120L3Q0P3G
NXH80T120L3Q0P3G
Q0PACK − Case 180AA
(Pb−Free and Halide−Free)
24 Units / Blister Tray
NXH80T120L3Q0S3G
NXH80T120L3Q0S3TG
NXH80T120L3Q0S3G
NXH80T120L3Q0S3TG
Q0PACK − Case 180AB
24 Units / Blister Tray
24 Units / Blister Tray
(Pb−Free and Halide−Free)
Q0PACK − Case 180AB
with pre−applied thermal interface material
(TIM)
(Pb−Free and Halide−Free)
www.onsemi.com
16
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM20, 55x32.5 / Q0PACK
CASE 180AA
ISSUE D
DATE 07 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON95859F
PIM20, 55x32.5 / Q0PACK
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM20, 55x32.5 / Q0PACK
CASE 180AB
ISSUE D
DATE 21 NOV 2017
MOUNTING FOOTPRINT & MARKING DIAGRAM ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98424F
PIM20 55X32.5 / Q0PACK (SOLDER PIN)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
PIM20, 55x32.5 / Q0PACK
CASE 180AB
ISSUE D
DATE 21 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98424F
PIM20 55X32.5 / Q0PACK (SOLDER PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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