NZT902 [ONSEMI]
NZT902 NPN低饱和晶体管;
| 型号： | NZT902 |
| 厂家： | 
ONSEMI |
| 描述： | NZT902 NPN低饱和晶体管 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
September 2006
NZT902
tm
NPN Low Saturation Transistor
4
•
These devices are designed with high current gain and
low saturation voltage with collector currents up to 3A continuous.
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
90
V
V
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
120
5
V
- Continuous
3
A
TJ
Junction Temperature
150
°C
°C
TSTG
Storage Temperature Range
- 55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T =25°C unless otherwise noted
a
Units
Symbol
Parameter
Value
1
PD
Total Device Dissipation
W
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.
Electrical Characteristics*
T = 25°C unless otherwise noted
a
Symbol
Parameter
Test Conditions
Min.
90
Typ. Max. Units
BVCEO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
IC = 10mA
V
V
V
BVCBO
BVEBO
ICBO
IC = 100µA
IE = 100µA
120
5
VCB = 100V
VCB = 100V, Ta = 100 °C
100
10
nA
uA
IEBO
hFE
Emitter-Base Cutoff Current
DC Current Gain
VEB = 4V
100
nA
IC = 0.1A, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
80
80
25
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.1A, IB = 5.0mA
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
50
250
600
mV
mV
mV
VBE(sat)
Cobo
fT
Base-Emitter Saturation Voltage
Output Capacitance
IC = 1A, IB = 100mA
1.25
35
V
VCB = 10V, IE = 0, f = 1MHz
IC = 100mA, VCE = 5V, f = 100MHz
pF
Transition Frequency
75
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2006 Fairchild Semiconductor Corporation
NZT902 Rev. B
1
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
350
0.40
150oC
1.6mA
1.4mA
Vce=2V
0.35
300
75oC
0.30
25oC
250
1.2mA
0.25
200
1.0mA
-25oC
0.20
0.8mA
150
0.15
-50oC
100
0.6mA
0.10
0.4mA
50
0.05
Ib=0.2mA
0
1E-3
0.00
0.0
0.01
0.1
1
0.5
1.0
1.5
2.0
Collector Current, [A]
Collector-Emitter Voltage, Vce[V]
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
0.5
1.2
B=10
B=10
150oC
75oC
0.4
-50oC
1.0
-25oC
0.3
0.8
25oC
0.2
0.6
25oC
75oC
-25oC
-50oC
150oC
0.1
0.4
0.0
0.1
0.2
0.01
1
0.1
1
Collector Current, [A]
Collector Current, [A]
Figure 5. Output Capacitance
Figure 6. Power Dissipation vs
Ambient Temperature
80
70
60
50
40
30
20
10
1.5
1.0
0.5
0.0
f=1mhz
0
25
50
75
100
125
150
0
20
40
60
80
100
Case Temperature, TC[oC]
Reverse Voltage, VR[V]
2
www.fairchildsemi.com
NZT902 Rev. B
Typical Performance Characteristics
Figure 9. SOA
10
Icmax
1
0.1
0.01
Vceo(Max)
1E-3
0.1
1
10
100
Collector-Emmiter Voltage, Vce[V]
3
www.fairchildsemi.com
NZT902 Rev. B
Mechanical Dimensions
SOT-223
3.00 0.10
MAX1.80
+0.04
–0.02
0.06
2.30 TYP
4.60 0.25
0.70 0.10
(0.95)
°
~10
°
0
+0.10
–0.05
(0.95)
0.25
6.50 0.20
Dimensions in Millimeters
4
www.fairchildsemi.com
NZT902 Rev. B
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be an exhaustive list of all such trademarks.
®
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®
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I C™
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SuperSOT™-8
SyncFET™
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i-Lo™
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®
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UHC™
Across the board. Around the world.™
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instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
5
www.fairchildsemi.com
NZT902 Rev. B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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