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P6SMB43AT3

更新时间：2025-07-13 06:56:02
品牌：ONSEMI
描述：600 Watt Peak Power Zener Transient Voltage Suppressors

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P6SMB43AT3 概述

600 Watt Peak Power Zener Transient Voltage Suppressors 600瓦峰值功率齐纳瞬态电压抑制器 瞬态抑制器

P6SMB43AT3 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DO-214
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.21
其他特性：UL RECOGNIZED, HIGH RELIABILITY最大击穿电压：45.2 V
最小击穿电压：40.9 V击穿电压标称值：43 V
最大钳位电压：59.3 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性：UNIDIRECTIONAL
最大功率耗散：0.55 W认证状态：Not Qualified
最大重复峰值反向电压：36.8 V子类别：Transient Suppressors
表面贴装：YES技术：ZENER
端子面层：Tin/Lead (Sn/Pb)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

P6SMB43AT3 数据手册

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P6SMB6.8AT3 Series  
600 Watt Peak Power Zener  
Transient Voltage Suppressors  
Unidirectional*  
The SMB series is designed to protect voltage sensitive  
components from high voltage, high energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. The SMB series is supplied in  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetic package and is ideally suited for use in communication  
systems, automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many other  
industrial/consumer applications.  
http://onsemi.com  
PLASTIC SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSORS  
5.8–171 VOLTS  
600 WATT PEAK POWER  
Specification Features:  
• Working Peak Reverse Voltage Range – 5.8 to 171 V  
• Standard Zener Breakdown Voltage Range – 6.8 to 200 V  
• Peak Power – 600 Watts @ 1 ms  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 µA Above 10 V  
Cathode  
Anode  
• UL 497B for Isolated Loop Circuit Protection  
• Response Time is Typically < 1 ns  
SMB  
CASE 403A  
PLASTIC  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
MARKING DIAGRAM  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
YWW  
xxxA  
LEADS: Modified L–Bend providing more contact area to bond pads  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
Y
= Year  
WW  
xxxA  
= Work Week  
= Specific Device Code  
= (See Table on Page 3)  
MAXIMUM RATINGS  
Please See the Table on the Following Page  
ORDERING INFORMATION  
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.  
{
Device  
Package  
Shipping  
2500/Tape & Reel  
P6SMBxxxAT3  
SMB  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
†The “T3” suffix refers to a 13 inch reel.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 5  
P6SMB6.8AT3/D  
P6SMB6.8AT3 Series  
MAXIMUM RATINGS  
Rating  
Peak Power Dissipation (Note 1.) @ T = 25°C, Pulse Width = 1 ms  
Symbol  
Value  
600  
Unit  
W
P
PK  
L
DC Power Dissipation @ T = 75°C  
P
D
3.0  
W
L
Measured Zero Lead Length (Note 2.)  
Derate Above 75°C  
Thermal Resistance from Junction to Lead  
40  
25  
mW/°C  
°C/W  
R
q
JL  
DC Power Dissipation (Note 3.) @ T = 25°C  
Derate Above 25°C  
Thermal Resistance from Junction to Ambient  
P
0.55  
4.4  
226  
W
mW/°C  
°C/W  
A
D
R
q
JA  
Forward Surge Current (Note 4.) @ T = 25°C  
I
100  
A
A
FSM  
Operating and Storage Temperature Range  
T , T  
–65 to +150  
°C  
J
stg  
1. 10 X 1000 ms, non–repetitive  
2. 1″ square copper pad, FR–4 board  
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted, V = 3.5 V Max. @  
I (Note 4) = 30 A) (Note 5.)  
F
A
F
I
F
Symbol  
Parameter  
I
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
PP  
V
C
PP  
V
C
V
V
BR RWM  
V
I
V
F
V
RWM  
Working Peak Reverse Voltage  
R
T
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
QV  
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
F
Uni–Directional TVS  
V
F
Forward Voltage @ I  
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non–repetitive  
duty cycle  
http://onsemi.com  
2
P6SMB6.8AT3 Series  
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)  
Breakdown Voltage  
V
C
@ I (Note 8.)  
PP  
V
RWM  
V
BR  
Volts (Note 7.)  
@ I  
V
C
I
PP  
(Note 6.)  
I
R
@ V  
QV  
BR  
T
RWM  
Device  
Min  
Nom  
Max  
mA  
Volts  
µA  
Volts  
Amps  
%/°C  
Marking  
Device  
P6SMB6.8AT3  
P6SMB7.5AT3  
P6SMB8.2AT3  
P6SMB9.1AT3  
6V8A  
7V5A  
8V2A  
9V1A  
5.8  
6.4  
7.02  
7.78  
1000  
500  
200  
50  
6.45  
7.13  
7.79  
8.65  
6.8  
7.51  
8.2  
7.14  
7.88  
8.61  
9.55  
10  
10  
10  
1
10.5  
11.3  
12.1  
13.4  
57  
53  
50  
45  
0.057  
0.061  
0.065  
0.068  
9.1  
P6SMB10AT3  
P6SMB11AT3  
P6SMB12AT3  
P6SMB13AT3  
10A  
11A  
12A  
13A  
8.55  
9.4  
10.2  
11.1  
10  
5
5
9.5  
10  
11.05  
12  
10.5  
11.6  
12.6  
13.7  
1
1
1
1
14.5  
15.6  
16.7  
18.2  
41  
38  
36  
33  
0.073  
0.075  
0.078  
0.081  
10.5  
11.4  
12.4  
5
13.05  
P6SMB15AT3  
P6SMB16AT3  
P6SMB18AT3  
P6SMB20AT3  
15A  
16A  
18A  
20A  
12.8  
13.6  
15.3  
17.1  
5
5
5
5
14.3  
15.2  
17.1  
19  
15.05  
16  
18  
15.8  
16.8  
18.9  
21  
1
1
1
1
21.2  
22.5  
25.2  
27.7  
28  
27  
24  
22  
0.084  
0.086  
0.088  
0.09  
20  
P6SMB22AT3  
P6SMB24AT3  
P6SMB27AT3  
P6SMB30AT3  
22A  
24A  
27A  
30A  
18.8  
20.5  
23.1  
25.6  
5
5
5
5
20.9  
22.8  
25.7  
28.5  
22  
24  
27.05  
30  
23.1  
25.2  
28.4  
31.5  
1
1
1
1
30.6  
33.2  
37.5  
41.4  
20  
18  
16  
0.092  
0.094  
0.096  
0.097  
14.4  
P6SMB33AT3  
P6SMB36AT3  
P6SMB39AT3  
P6SMB43AT3  
33A  
36A  
39A  
43A  
28.2  
30.8  
33.3  
36.8  
5
5
5
5
31.4  
34.2  
37.1  
40.9  
33.05  
36  
39.05  
43.05  
34.7  
37.8  
41  
1
1
1
1
45.7  
49.9  
53.9  
59.3  
13.2  
12  
11.2  
10.1  
0.098  
0.099  
0.1  
45.2  
0.101  
P6SMB47AT3  
P6SMB51AT3  
P6SMB56AT3  
P6SMB62AT3  
47A  
51A  
56A  
62A  
40.2  
43.6  
47.8  
53  
5
5
5
5
44.7  
48.5  
53.2  
58.9  
47.05  
51.05  
56  
49.4  
53.6  
58.8  
65.1  
1
1
1
1
64.8  
70.1  
77  
9.3  
8.6  
7.8  
7.1  
0.101  
0.102  
0.103  
0.104  
62  
85  
P6SMB68AT3  
P6SMB75AT3  
P6SMB82AT3  
P6SMB91AT3  
68A  
75A  
82A  
91A  
58.1  
64.1  
70.1  
77.8  
5
5
5
5
64.6  
71.3  
77.9  
86.5  
68  
75.05  
82  
71.4  
78.8  
86.1  
95.5  
1
1
1
1
92  
6.5  
5.8  
5.3  
4.8  
0.104  
0.105  
0.105  
0.106  
103  
113  
125  
91  
P6SMB100AT3  
P6SMB110AT3  
P6SMB120AT3  
P6SMB130AT3  
100A  
110A  
120A  
130A  
85.5  
94  
102  
111  
5
5
5
5
95  
100  
110.5  
120  
105  
116  
126  
137  
1
1
1
1
137  
152  
165  
179  
4.4  
4.0  
3.6  
3.3  
0.106  
0.107  
0.107  
0.107  
105  
114  
124  
130.5  
P6SMB150AT3  
P6SMB160AT3  
P6SMB170AT3  
P6SMB180AT3  
150A  
160A  
170A  
180A  
128  
136  
145  
154  
5
5
5
5
143  
152  
162  
171  
150.5  
160  
170  
158  
168  
179  
189  
1
1
1
1
207  
219  
234  
246  
2.9  
2.7  
2.6  
2.4  
0.108  
0.108  
0.108  
0.108  
180  
P6SMB200AT3  
200A  
171  
5
190  
200  
210  
1
274  
2.2  
0.108  
6. A transient suppressor is normally selected according to the working peak reverse voltage (V  
the DC or continuous peak operating voltage level.  
), which should be equal to or greater than  
RWM  
7. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
8. Surge current waveform per Figure 2 and derate per Figure 3.  
http://onsemi.com  
3
P6SMB6.8AT3 Series  
100  
10  
PULSE WIDTH (t ) IS DEFINED AS  
P
THAT POINT WHERE THE PEAK  
NONREPETITIVE  
t ≤ 10 µs  
rĂ  
PULSE WAVEFORM  
SHOWN IN FIGURE 2  
CURRENT DECAYS TO 50% OF I  
.
PP  
100  
50  
0
PEAK VALUE - I  
PP  
I
PP  
2
HALF VALUE -  
1
t
P
0.1  
0.1 µs  
1 µs  
10 µs  
100 µs  
1 ms  
10 ms  
0
1
2
3
4
t , PULSE WIDTH  
P
t, TIME (ms)  
Figure 1. Pulse Rating Curve  
Figure 2. Pulse Waveform  
160  
TYPICAL PROTECTION CIRCUIT  
140  
120  
Z
in  
100  
80  
LOAD  
V
in  
V
L
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 3. Pulse Derating Curve  
10,000  
1000  
MEASURED @  
ZERO BIAS  
MEASURED @ V  
RWM  
100  
10  
0.1  
1
10  
100  
1000  
V
BR  
, BREAKDOWN VOLTAGE (VOLTS)  
Figure 4. Capacitance versus Breakdown  
Voltage  
http://onsemi.com  
4
P6SMB6.8AT3 Series  
APPLICATION NOTES  
RESPONSE TIME  
minimum lead lengths and placing the suppressor device as  
close as possible to the equipment or components to be  
protected will minimize this overshoot.  
In most applications, the transient suppressor device is  
placed in parallel with the equipment or component to be  
protected. In this situation, there is a time delay associated  
with the capacitance of the device and an overshoot  
condition associated with the inductance of the device and  
the inductance of the connection method. The capacitive  
effect is of minor importance in the parallel protection  
scheme because it only produces a time delay in the  
transition from the operating voltage to the clamp voltage as  
shown in Figure 5.  
The inductive effects in the device are due to actual  
turn-on time (time required for the device to go from zero  
current to full current) and lead inductance. This inductive  
effect produces an overshoot in the voltage across the  
equipment or component being protected as shown in  
Figure 6. Minimizing this overshoot is very important in the  
application, since the main purpose for adding a transient  
suppressor is to clamp voltage spikes. The SMB series have  
a very good response time, typically < 1 ns and negligible  
inductance. However, external inductive effects could  
produce unacceptable overshoot. Proper circuit layout,  
Some input impedance represented by Z is essential to  
in  
prevent overstress of the protection device. This impedance  
should be as high as possible, without restricting the circuit  
operation.  
DUTY CYCLE DERATING  
The data of Figure 1 applies for non-repetitive conditions  
and at a lead temperature of 25°C. If the duty cycle increases,  
the peak power must be reduced as indicated by the curves  
of Figure 7. Average power must be derated as the lead or  
ambient temperature rises above 25°C. The average power  
derating curve normally given on data sheets may be  
normalized and used for this purpose.  
At first glance the derating curves of Figure 7 appear to be  
in error as the 10 ms pulse has a higher derating factor than  
the 10 µs pulse. However, when the derating factor for a  
given pulse of Figure 7 is multiplied by the peak power value  
of Figure 1 for the same pulse, the results follow the  
expected trend.  
http://onsemi.com  
5
P6SMB6.8AT3 Series  
V
in  
(TRANSIENT)  
OVERSHOOT DUE TO  
INDUCTIVE EFFECTS  
V
V
V
in  
(TRANSIENT)  
V
L
V
L
V
in  
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT  
t
t
Figure 5.  
Figure 6.  
1
0.7  
0.5  
0.3  
0.2  
PULSE WIDTH  
10 ms  
0.1  
0.07  
0.05  
1 ms  
0.03  
0.02  
100 µs  
10 µs  
10 20  
D, DUTY CYCLE (%)  
0.01  
0.1 0.2  
0.5  
1
2
5
50 100  
Figure 7. Typical Derating Factor for Duty Cycle  
UL RECOGNITION  
The entire series has Underwriters Laboratory  
Recognition for the classification of protectors (QVGV2)  
under the UL standard for safety 497B and File #116110.  
Many competitors only have one or two devices recognized  
or have recognition in a non-protective category. Some  
competitors have no recognition at all. With the UL497B  
recognition, our parts successfully passed several tests  
including Strike Voltage Breakdown test, Endurance  
Conditioning, Temperature test, Dielectric  
Voltage-Withstand test, Discharge test and several more.  
Whereas, some competitors have only passed a  
flammability test for the package material, we have been  
recognized for much more to be included in their Protector  
category.  
http://onsemi.com  
6
P6SMB6.8AT3 Series  
OUTLINE DIMENSIONS  
Transient Voltage Suppressors – Surface Mounted  
600 Watt Peak Power  
SMB  
DO–214AA  
CASE 403A–03  
ISSUE D  
S
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. D DIMENSION SHALL BE MEASURED WITHIN  
DIMENSION P.  
D
B
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
4.06  
3.30  
1.90  
1.96  
MAX  
4.57  
3.81  
2.41  
2.11  
0.152  
0.30  
1.27  
A
B
C
D
H
J
0.160  
0.130  
0.075  
0.077  
0.180  
0.150  
0.095  
0.083  
0.0020 0.0060 0.051  
0.006  
0.030  
0.012  
0.050  
0.15  
0.76  
K
P
S
C
0.020 REF  
0.51 REF  
0.205  
0.220  
5.21  
5.59  
H
J
K
P
0.089  
2.261  
0.108  
2.743  
inches  
mm  
0.085  
2.159  
SMB Footprint  
http://onsemi.com  
7
P6SMB6.8AT3 Series  
Surmetic is a trademark of Semiconductor Components Industries, LLC.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –  
then Dial 866–297–9322  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
001–800–4422–3781  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
Email: ONlit–asia@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
Email: ONlit@hibbertco.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
P6SMB6.8AT3/D  

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型号 制造商 描述 价格 文档
P6SMB43AT3G ONSEMI 600 Watt Peak Power Zener Transient Voltage Suppressors 获取价格
P6SMB43AT3G LITTELFUSE Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN 获取价格
P6SMB43ATR13LEADFREE CENTRAL Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon, 获取价格
P6SMB43C TSC Surface Mount Transient Voltage Suppressor 获取价格
P6SMB43C PANJIT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 获取价格
P6SMB43C LITTELFUSE P6SMB系列专门设计用于保护敏感电子设备不受闪电及其他瞬态电压现象引起的瞬态电压的影响。 功能与特色: 应用: 获取价格
P6SMB43C SEMIKRON Trans Voltage Suppressor Diode, 600W, 34.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN 获取价格
P6SMB43C SSC Transient Suppressor 获取价格
P6SMB43C SUNMATE SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE 获取价格
P6SMB43C-G WEITRON Trans Voltage Suppressor Diode, 36.8V V(RWM), Bidirectional, 获取价格

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