PCFG40T65SQF [ONSEMI]

650V 40A FS4 IGBT 晶片级;
PCFG40T65SQF
型号: PCFG40T65SQF
厂家: ONSEMI    ONSEMI
描述:

650V 40A FS4 IGBT 晶片级

双极性晶体管
文件: 总4页 (文件大小:221K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ON Semiconductor  
Is Now  
To learn more about onsemi™, please visit our website at  
www.onsemi.com  
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi  
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without  
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,  
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,  
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/  
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for  
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative  
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  
PCFG40T65SQF  
IGBT Die  
Using novel field stop IGBT technology, ON Semiconductor’s new  
th  
series of field stop 4 generation IGBTs offer the optimum  
performance for solar inverter and UPS applications where low  
conduction and switching losses are essential.  
www.onsemi.com  
Features  
Maximum Junction Temperature: T = 175°C  
J
V
= 650 V  
RCE  
Positive Temperature Coefficient for Easy Parallel Operating  
High Current Capability  
I
C
= Limited by T  
j(max)  
Low Saturation Voltage: V  
High Input Impedance  
Fast Switching  
= 1.6 V (Typ.) @ I = 40 A  
C
CE(sat)  
C
Tighten Parameter Distribution  
G
Typical Applications  
Solar Inverters  
UPS Systems  
E
IGBT Die  
MECHANICAL DATA  
Parameter  
Mils  
mm  
Die Size  
140.94 × 140.94  
113.4 × 113.14  
15.63 × 19.19  
2.48  
3580 x 3580  
2880 x 2874  
397 x 487.6  
63  
Gate Pad Size  
Emitter Pad Size  
Die Thickness  
Scribe Width  
80 mm  
Top Metal  
5 mm AlSiCu  
1.05 mm Al/NiV/Ag  
Silicon Nitride  
200 mm  
Back Metal  
Topside Passivation  
Wafer Diameter  
Max Possible Die Per Wafer  
1986  
DIE Outline  
Recommended Storage  
Environment  
In original container, in dry nitrogen, < 3  
months at ambient temperature of 23°C  
ORDERING INFORMATION  
Device  
Inking?  
Shipping Method  
PCFG40T65SQF  
No  
Sawn Wafer on Tape  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
May, 2019 Rev. 0  
PCFG40T65SQF/D  
PCFG40T65SQF  
MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
650  
Unit  
V
Collector to Emitter Voltage, T = 25°C  
V
CES  
V
GES  
J
Gate to Emitter Voltage  
20  
V
Collector Current  
@T = 25°C  
I
(Note 1)  
160  
A
C
C
Pulsed Collector Current  
I
A
CM  
Operating Junction Temperature  
Storage Temperature Range  
T
40 to +175  
17 to +25  
°C  
°C  
J
T
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Depending on the thermal properties of assembly.  
2. Not subject to production test verified by design/characterization.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
GE  
= 0 V, I = 1 mA  
BV  
CES  
650  
V
C
Temperature Coefficient of Breakdown  
Voltage  
I
C
= 1 mA, reference to 25°C  
DBV  
/DT  
J
0.6  
V/°C  
CES  
CollectorEmitter Cutoff Current  
Gate Leakage Current  
V
V
= 0 V, V = V  
I
DSS  
250  
400  
mA  
GE  
CE  
CES  
= 0 V, V = V  
I
nA  
CE  
GE  
GES  
GSS  
ON CHARACTERISTICS  
GE Threshold Voltage  
V
= V , I = 40 mA  
V
2.6  
4.5  
1.6  
6.4  
2.1  
V
V
V
GE  
CE  
C
GE(th)  
CollectorEmitter Saturation Voltage  
I
C
= 40 A, V = 15 V  
V
CE(sat)  
GE  
I
C
= 40 A, V = 15 V, T = 175°C  
1.92  
GE  
C
DYNAMIC CHARACTERISTICS  
Input Capacitance  
V
GE  
= 0 V, V = 30 V, f = 1 MHz  
C
ies  
2620  
60  
pF  
CE  
Output Capacitance  
Coes  
Reverse Transfer Capacitance  
GATE CHARGE CHARACTERISTICS  
Total Gate Charge  
C
9
res  
V
CE  
= 400 V, I = 40 A, V = 15 V  
Q
80  
15  
20  
nC  
C
GE  
g
ge  
gc  
Gate to Emitter Charge  
Q
Q
Gate to Collector Charge  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*Switching characteristics and thermal properties depend strongly on module design and mounting technology.  
For ordering, technique and other information on ON Semiconductor automotive bare die products, please contact  
automotivebaredie@onsemi.com.  
www.onsemi.com  
2
 
PCFG40T65SQF  
(all dimensions in mm)  
Figure 1. Die Layout  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
PCFG40T65SQF/D  

相关型号:

PCFG50T65SQF

650V 50A FS4 IGBT Wafer Sales
ONSEMI

PCFG60T120SQF

Ultra Field Stop IGBT 1200V 60A bare die
ONSEMI

PCFG75T120SQF

超场截止 IGBT 1200V 75A 裸片
ONSEMI

PCFG75T65SQF

650V 75A FS4 IGBT 晶片级
ONSEMI

PCFJZH-AC001

Ceramic BPF, 0.45MHz, ROHS COMPLIANT PACKAGE
TOKO

PCFMA-003

Ceramic BPF, 0.455MHz
TOKO

PCFMA-012

Ceramic BPF, 0.46MHz
TOKO

PCFMA-027

Ceramic BPF, 0.45MHz
TOKO

PCFMA-050

Ceramic BPF, 0.459MHz
TOKO

PCFMA-221

AM CERAMIC FILTERS WITH MATCHING COIL
TOKO

PCFMA3-020

Ceramic BPF
TOKO

PCFMA3-023

Ceramic BPF
TOKO