PCGA200T65NF8M1 [ONSEMI]
IGBT 650 V，200 A 场截止 Trench Gen3 (FS3) 裸片，带可焊接顶层金属可与 PCRKA20065F8M1 配对;
| 型号： | PCGA200T65NF8M1 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 650 V，200 A 场截止 Trench Gen3 (FS3) 裸片，带可焊接顶层金属可与 PCRKA20065F8M1 配对 PC 双极性晶体管 |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
PCGA200T65NF8M1ꢀ
650 V, 200 A Field Stop
Trench IGBT with Solderable
Top Metal
www.onsemi.com
Features
• AEC−Q101 Qualified
• Maximum Junction Temperature 175_C
• Positive Temperature Coefficient
• Easy Paralleling
• Short Circuit Rated
• Very Low Saturation Voltage: V
= 1.53 V(Typ.) @ I = 200 A
C
CE(SAT)
• Optimized for Motor Control Applications
• Emitter Pad Covered with Solderable Metal Layer
Applications
• Automotive Traction Modules
• General Power Modules
ORDERING INFORMATION
Part Number
PCGA200T65NF8M1
Packing
Water (sawn on foil)
mils
mm
10,000 × 10,000
2 × (4,493.5 × 8,832)
1,408 × 1,406
79
Die Size
394 × 394
2 × (177 × 348)
55 × 55
Emitter Attach Area
Gate / Sensor Pad Attach Area
Die Thickness
3
Top Metal
5 mm AlSiCu + 1.15 mm Ti/NiV/Ag (STM)
Back Metal
0.95 mm NiV/Ag
Silicon Nitride plus Polyimide
200 mm
Topside Passivation
Wafer Diameter
Max Possible Die Per Wafer
234
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
August, 2018 − Rev. 0
PCGA200T65NF8M1/D
PCGA200T65NF8M1
ABSOLUTE MAXIMUM RATINGS (T = 25_C unless otherwise noted)
J
Parameter
Symbol
Ratings
Units
Collector−Emitter Voltage
Gate−Emitter Voltage
V
650
V
CES
V
GES
20
(Note 1)
600
V
A
DC Collector Current, limited by TJ max
IC
I
A
Pulsed Collector Current, VGE=15 V, t limited by TJ max (Note 2)
CM
p
ms
_C
_C
t
5
Short Circuit Withstand Time, V = 15 V, V ≤ 400 V, T ≤ 150°C
sc
GE
CE
J
T
−40 to +175
+17 to +25
Operating Junction Temperature
Storage Temperature Range
1. Depends on the thermal properties of assembly
J
T
stg
2. Not subject to production test − verified by design/characterization
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static Characteristics (Tested on wafers)
Collector−Emitter Breakdown Voltage
BV
V
= 0 V, I = 1 mA
650
−
−
1.25
5.5
−
−
V
V
CES
GE
C
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Collector Cut−Off Current
V
I
= 100 A, V = 15 V
1.75
6.5
40
CE(SAT)
C
GE
V
GE(th)
V
= V , I = 200 mA
4.5
−
V
GE
CE
C
I
V
CE
= V
, V = 0 V
GE
mA
nA
CES
CES
Gate Leakage Current
I
V
GE
= V
, V = 0 V
CE
−
−
400
GES
GES
Electrical Characteristics (Not subjected to production test − verified by design/characterization)
Collector to Emitter Saturation Voltage
V
T = 25°C
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.53
2.04
9.6
445
78
1.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
CE(SAT)
J
I
V
= 200 A,
C
= 15 V
GE
T = 175°C
J
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Total Gate Charge
Gate−to−Emitter Charge
Gate−to−Collector Charge
Turn−On Delay Time
Rise Time
C
nF
pF
pF
W
IES
V
CE
= 30 V, V = 0 V
GE
f = 1 MHz
C
OES
C
RES
R
f = 1 MHz
2.0
229
66
G
Q
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
G(Total)
V
V
= 400 V, I = 200 A
C
CE
Q
Q
GE
V
GE
= 15 V
64
GC
t
67
d(on)
= 400 V, I = 200 A
CE
C
R
= 15 W
= 15 V
Inductive Load
T = 25°C
t
r
233
118
177
64
G
V
GE
Turn−Off Delay Time
Fall Time
t
d(off)
J
t
f
Turn−On Delay Time
Rise Time
t
t
d(on)
V
CE
= 400 V, I = 200 A
C
R
= 15 W
= 15 V
Inductive Load
T = 175°C
t
r
236
124
208
G
V
GE
Turn−Off Delay Time
Fall Time
d(off)
J
t
f
3. For ordering, technique and other information on Onsemi automotive bare die products, please contact automotivebaredie@onsemi.com
www.onsemi.com
2
PCGA200T65NF8M1
Figure 1. Dimensional Outline and Pad Layout
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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For additional information, please contact your local
Sales Representative
◊
PCGA200T65NF8M1/D
相关型号：
PCGA300T65DF8M1
IGBT 650 V, 300 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable/Sinterable Top Metal. Pairing with PCRKA30065F8M1
ONSEMI
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