PCP1103-TD-H [ONSEMI]

双极晶体管,-30V,-1.5A,低饱和压,PNP 单 PCP;
PCP1103-TD-H
型号: PCP1103-TD-H
厂家: ONSEMI    ONSEMI
描述:

双极晶体管,-30V,-1.5A,低饱和压,PNP 单 PCP

PC 开关 晶体管
文件: 总5页 (文件大小:320K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA1346A  
PCP1103  
Bipolar Transistor  
http://onsemi.com  
( )  
sat PNP Single PCP  
30V, 1.5A, Low V  
CE  
Applications  
DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers  
Features  
Adoption of MBIT process  
Low collector to emitter saturation voltage  
High allowable power dissipation  
Large current capacity  
High speed switching  
Halogen free compliance  
Specications  
Absolute Maximum Ratings  
at Ta=25°C  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
--30  
--30  
-- 5  
Unit  
V
V
CBO  
V
V
CEO  
V
V
EBO  
I
C
--1.5  
-- 5  
A
Collector Current (Pulse)  
I
A
CP  
Continued on next page.  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: PCP  
7007B-004  
• JEITA, JEDEC  
: SC-62, SOT-89, TO-243  
Minimum Packing Quantity : 1,000 pcs./reel  
Top View  
PCP1103-TD-H  
4.5  
1.6  
Packing Type: TD  
Marking  
1.5  
TD  
1
2
3
0.4  
0.5  
0.4  
1.5  
Electrical Connection  
3.0  
2
1
0.75  
3
1 : Base  
2 : Collector  
3 : Emitter  
Bottom View  
PCP  
Semiconductor Components Industries, LLC, 2013  
December, 2013  
D1113 TKIM TC-00003073/N1208EA MSIM TC-00001718 No.A1346-1/5  
PCP1103  
Continued from preceding page.  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
mA  
W
Base Current  
I
--300  
1.3  
B
When mounted on ceramic substrate (450mm2 0.8mm)  
×
Collector Dissipation  
P
C
Tc=25  
C
3.5  
W
°
Junction Temperature  
Storage Temperature  
Tj  
150  
C
C
°
Tstg  
--55 to +150  
°
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
--0.1  
--0.1  
560  
Collector Cutoff Current  
Emitter Cutoff Current  
I
V
= --30V, I =0A  
A
A
μ
CBO  
CB E  
I
V
= --4V, I =0A  
μ
EBO  
EB C  
DC Current Gain  
h
V
CE  
= --2V, I = --100mA  
200  
FE  
C
Gain-Bandwidth Product  
Output Capacitance  
f
V
= --10V, I = --300mA  
450  
9
MHz  
pF  
mV  
V
T
CE C  
Cob  
V
CB  
= --10V, f=1MHz  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Turn-On Time  
V
(sat)  
(sat)  
I
C
= --0.75A, I = --15mA  
--250  
--0.85  
--375  
--1.2  
CE  
B
V
I = --0.75A, I = --15mA  
C B  
BE  
V
I
C
= --10 A, I =0A  
--30  
--30  
--5  
V
μ
(BR)CBO  
E
V
I
C
= --1mA, R  
=
V
(BR)CEO  
BE  
V
I = --10 A, I =0A  
E
V
μ
(BR)EBO  
C
t
t
t
35  
115  
30  
ns  
on  
Storage Time  
See specied Test Circuit.  
ns  
stg  
f
Fall Time  
ns  
Switching Time Test Circuit  
I
B1  
PW=50μs  
D.C.1%  
OUTPUT  
I
B2  
INPUT  
R
B
R
L
50Ω  
+
820μF  
V
= --12V  
CC  
I
=20I = --20I = --0.75A  
B1 B2  
C
Ordering Information  
Device  
Package  
PCP  
Shipping  
memo  
Pb Free and Halogem Free  
PCP1103-TD-H  
1,000pcs./reel  
I
-- V  
I
-- V  
C
CE  
C
BE  
--2.0  
--1.8  
--1.6  
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--1.6  
V
= --2V  
CE  
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--0.2  
0
--0.2  
0
I =0mA  
B
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0  
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
IT14107  
Collector to Emitter Voltage, V  
CE  
-- V IT14106  
Base to Emitter Voltage, V -- V  
BE  
No.A1346-2/5  
PCP1103  
h
-- I  
f
-- I  
C
FE  
C
T
7
5
3
2
V
= --2V  
CE  
V
= --10V  
CE  
1000  
7
5
3
2
3
2
100  
100  
7
5
7
3
2
5
2
3
5
7
2
3
5
7
2
3
2
3
3
3
5
7
2
3
5
7
2
IT01679  
--0.01  
--0.1  
--1.0  
--0.01  
--0.1  
--1.0  
Collector Current, I -- A  
IT14108  
Collector Current, I -- A  
C
C
Cob -- V  
V
(sat) -- I  
CE C  
CB  
5
100  
f=1MHz  
I
/ I =20  
B
C
7
5
3
2
3
2
--0.1  
7
5
10  
3
2
7
5
3
2
--0.01  
7
2
3
5
7
2
3
5
7
2
3
5
2
5
7
2
3
5
7
2
3
0.1  
1.0  
10  
--0.01  
--0.1  
--1.0  
Collector to Base Voltage, V  
-- V  
IT01681  
Collector Current, I -- A  
IT14109  
CB  
C
V
(sat) -- I  
C
V
(sat) -- I  
C
CE  
BE  
2
3
2
I
/ I =50  
B
I
/ I =50  
B
C
C
--1.0  
7
5
3
2
--1.0  
7
5
--0.1  
7
5
3
2
3
--0.01  
--0.01  
2
2
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
--0.01  
--0.1  
--1.0  
--0.1  
--1.0  
Collector Current, I -- A  
IT14110  
Collector Current, I -- A  
IT14111  
C
C
S O A  
P
-- Ta  
C
1.6  
--10  
When mounted on ceramic substrate  
7
5
I
= --5A  
<10μs  
(450mm2  
×
0.8mm)  
CP  
1.4  
1.3  
1.2  
3
2
I = --1.5A  
C
--1.0  
1.0  
0.8  
0.6  
0.4  
7
5
3
2
--0.1  
7
5
3
2
Ta=25°C  
0.2  
0
Single pulse  
When mounted on ceramic substrate (450mm2×0.8mm)  
--0.01  
--0.01  
2
3
5
7
2
3
5
7
--1.0  
2
3
5
7
2
3
5
0
20  
40  
60  
80  
100  
120  
140  
160  
--0.1  
--10  
-- V IT14112  
Collector to Emitter Voltage, V  
Ambient Temperature, Ta -- °C  
IT14113  
CE  
No.A1346-3/5  
PCP1103  
P
-- Tc  
C
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Case Temperature, Tc -- °C  
IT14114  
No.A1346-4/5  
PCP1103  
Outline Drawing  
Land Pattern Example  
PCP1103-TD-H  
Mass (g) Unit  
Unit: mm  
0.058  
mm  
* For reference  
2.2  
45°  
45°  
1.0  
1.0  
1.5  
3.0  
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
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PS No.A1346-5/5  

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