PCRKA30065F8 [ONSEMI]
650V / 300A 极快速二极管;
| 型号： | PCRKA30065F8 |
| 厂家： | 
ONSEMI |
| 描述： | 650V / 300A 极快速二极管 二极管 |
| 文件： | 总4页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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PCRKA30065F8M1
650V / 300A Extremefast Diode
Features
Automotive Qualified
Maximum Junction Temperature 175°C
Extremefast technology with Soft Recovery
Low Forward Voltage (VF = 1.3V (Typ) @IF = 300A)
Applications
Automotive Traction Modules
General Power Modules
Ordering Information
P/N
PCRKA30065F8
Packing
Wafer (Sawn-on-foil)
mils
m
Die Size
283 X 394
235 X 345
3.14
7,200 X 10,000
Anode Area
5,970 X 8,770
Scribe Lane
80
77
Die thickness
Top metal
3
Al (0.5% Cu)
NiV/Ag
Back metal
Topside Passivation
Wafer diameter
Max. Possible Die per Wafer
SiN and Polyimide
200mm
331
Semiconductor Components Industries, LLC, 2017
January, 2017, Rev. 2.0
Publication Order Number:
PCRKA30065F8
1
o
Absolute Maximum Ratings (T =25 C unless otherwise noted)
VJ
Parameter
Voltage Cathode to Anode
Symbol
Ratings
650
Units
V
VR
IF
Continuous Forward Current
Junction Temperature Range
Operating Junction Temperature
Storage Temperature Range
(Note 1)
A
-55 to +175
-55 to +150
+17 to +25
oC
oC
oC
TJ
Tstg
Notes:
1: Depends on the thermal properties of assembly
Electrical Characteristics of the Diode (T = 25°C unless otherwise noted).
VJ
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Static Characteristics (Tested on wafers)
IR
Reverse Leakage Current
Breakdown Voltage
Forward Voltage
VR = 650V
-
650
-
-
-
30
-
A
V
VBR
VF
IR = 1mA
IF = 100A
1.1
1.65
V
Electrical Characteristics (Not subject to production test - verified by design /characterization)
IR
Reverse Leakage Current
Forward Voltage
VR = 650V, TVJ = 175oC
IF = 300A
-
2
-
mA
V
-
1.3
1.9
VF
IF = 300A, TVJ = 175oC
-
-
-
1.2
-
-
-
-
V
Qrr
Irr
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
5.29
57.15
159.1
C
A
IF = 300A, VR = 300V,
dIF/dt = 1000A/s
Trr
-
ns
For ordering, technique and other information on Onsemi automotive bare die products, please contact
automotivedie@onsimi.com
www.onsemi.com
2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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