PZT3904 [ONSEMI]
NPN General Purpose Amplifier;
| 型号： | PZT3904 |
| 厂家： | 
ONSEMI |
| 描述： | NPN General Purpose Amplifier 开关 光电二极管 小信号双极晶体管 |
| 文件： | 总12页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MMBT3904WT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
Value
Unit
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
MMBT3904WT1
MMBT3906WT1
V
CEO
V
CBO
V
EBO
40
–40
Vdc
Collector–Base Voltage
Emitter–Base Voltage
MMBT3904WT1
MMBT3906WT1
60
–40
Vdc
Vdc
MMBT3904WT1
MMBT3906WT1
6.0
–5.0
3
Collector Current — Continuous MMBT3904WT1
MMBT3906WT1
I
200
–200
mAdc
C
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
CASE 419–02, STYLE 3
SOT–323/SC–70
(1)
Total Device Dissipation
P
D
150
mW
T
= 25°C
A
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
833
°C/W
°C
JA
T , T
J stg
–55 to +150
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(2)
Collector–Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
MMBT3904WT1
MMBT3906WT1
40
–40
—
—
C
C
B
B
(I = –1.0 mAdc, I = 0)
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
Vdc
Vdc
(BR)CBO
MMBT3904WT1
MMBT3906WT1
60
–40
—
—
C
E
(I = –10 Adc, I = 0)
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
(BR)EBO
MMBT3904WT1
MMBT3906WT1
6.0
–5.0
—
—
E
E
C
C
(I = –10 Adc, I = 0)
Base Cutoff Current
I
nAdc
nAdc
BL
(V
CE
(V
CE
= 30 Vdc, V
EB
= –30 Vdc, V
= 3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
—
—
50
–50
= –3.0 Vdc)
EB
Collector Cutoff Current
I
CEX
(V
CE
(V
CE
= 30 Vdc, V
EB
= –30 Vdc, V
= 3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
—
—
50
–50
= –3.0 Vdc)
EB
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
(2)
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 0.1 mAdc, V
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
MMBT3904WT1
MMBT3906WT1
40
70
100
60
—
—
300
—
C
CE
CE
CE
CE
(I = 1.0 mAdc, V
C
(I = 10 mAdc, V
C
(I = 50 mAdc, V
C
(I = 100 mAdc, V
= 1.0 Vdc)
CE
30
—
C
(I = –0.1 mAdc, V
= –1.0 Vdc)
= –1.0 Vdc)
= –1.0 Vdc)
= –1.0 Vdc)
60
80
100
60
—
—
300
—
C
CE
CE
CE
CE
(I = –1.0 mAdc, V
C
(I = –10 mAdc, V
C
(I = –50 mAdc, V
C
(I = –100 mAdc, V
CE
= –1.0 Vdc)
30
—
C
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
V
Vdc
Vdc
CE(sat)
MMBT3904WT1
MMBT3906WT1
—
—
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = –10 mAdc, I = –1.0 mAdc)
—
—
–0.25
–0.4
C
C
B
B
(I = –50 mAdc, I = –5.0 mAdc)
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
BE(sat)
MMBT3904WT1
MMBT3906WT1
0.65
—
0.85
0.95
C
C
B
B
(I = 50 mAdc, I = 5.0 mAdc)
(I = –10 mAdc, I = –1.0 mAdc)
–0.65
—
–0.85
–0.95
C
C
B
B
(I = –50 mAdc, I = –5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
MHz
pF
T
(I = 10 mAdc, V
(I = –10 mAdc, V
C
= 20 Vdc, f = 100 MHz)
CE
CE
MMBT3904WT1
MMBT3906WT1
300
250
—
—
C
= –20 Vdc, f = 100 MHz)
Output Capacitance
C
obo
(V
CB
(V
CB
= 5.0 Vdc, I = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
—
—
4.0
4.5
E
= –5.0 Vdc, I = 0, f = 1.0 MHz)
E
Input Capacitance
C
pF
ibo
(V
EB
(V
EB
= 0.5 Vdc, I = 0, f = 1.0 MHz)
= –0.5 Vdc, I = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
—
—
8.0
10.0
C
C
Input Impedance
h
k Ω
ie
re
fe
(V
CE
(V
CE
= 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
= –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
1.0
2.0
10
12
C
C
–4
X 10
Voltage Feedback Ratio
h
h
(V
CE
(V
CE
= 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
= –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
0.5
0.1
8.0
10
C
C
Small–Signal Current Gain
—
(V
CE
(V
CE
= 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
= –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
100
100
400
400
C
C
Output Admittance
h
mhos
dB
oe
(V
CE
(V
CE
= 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
= –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
1.0
3.0
40
60
C
C
Noise Figure
NF
(V
CE
(V
CE
= 5.0 Vdc, I = 100 Adc, R = 1.0 k Ω, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
—
—
5.0
4.0
C
S
= –5.0 Vdc, I = –100 Adc, R = 1.0 k Ω, f = 1.0 kHz)
C
S
SWITCHING CHARACTERISTICS
(V
(V
= 3.0 Vdc, V
BE
= –0.5 Vdc)
= 0.5 Vdc)
MMBT3904WT1
MMBT3906WT1
Delay Time
t
—
—
35
35
CC
CC
d
= –3.0 Vdc, V
BE
ns
ns
(I = 10 mAdc, I = 1.0 mAdc)
B1
MMBT3904WT1
MMBT3906WT1
Rise Time
t
—
—
35
35
C
r
(I = –10 mAdc, I = –1.0 mAdc)
C
B1
(V
(V
= 3.0 Vdc, I = 10 mAdc)
C
MMBT3904WT1
MMBT3906WT1
Storage Time
Fall Time
t
—
—
200
225
CC
CC
s
= –3.0 Vdc, I = –10 mAdc)
C
(I = I = 1.0 mAdc)
B1 B2
MMBT3904WT1
MMBT3906WT1
t
f
—
—
50
75
(I = I = –1.0 mAdc)
B1 B2
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3904WT1
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
10 < t < 500
s
1
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
–0.5 V
C
< 4 pF*
C < 4 pF*
S
S
1N916
–9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
T
= 25°C
= 125°C
J
J
10
5000
V
= 40 V
MMBT3904WT1
CC
/I = 10
MMBT3904WT1
3000
2000
7.0
I
C B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
20 30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
Figure 4. Charge Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMBT3904WT1
500
500
I
/I = 10
V
= 40 V
C B
CC
/I = 10
300
200
300
200
I
C B
100
70
100
70
t @ V
= 3.0 V
CC
r
50
50
30
20
30
20
40 V
15 V
10
7
MMBT3904WT1
10
7
MMBT3904WT1
2.0 V
50 70 100
t
@ V
= 0 V
d
OB
20 30
, COLLECTOR CURRENT (mA)
5
5
1.0
2.0 3.0 5.0 7.0 10
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 5. Turn–On Time
Figure 6. Rise Time
500
500
1
′ = t – / t
s s 8 f
B1 B2
t
I
V
I
= 40 V
CC
300
200
300
200
= I
= I
I
/I = 20
I
/I = 10
B1 B2
C B
C B
I
/I = 20
C B
100
70
100
70
I
/I = 20
50
50
C B
I
/I = 10
I
/I = 10
C B
30
20
30
20
C B
10
7
10
7
MMBT3904WT1
2.0 3.0
MMBT3904WT1
5
5
1.0
5.0 7.0 10
20 30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
= 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
CE
A
12
10
8
14
SOURCE RESISTANCE = 200
f = 1.0 kHz
I
= 1.0 mA
C
12
I
= 1.0 mA
C
I
= 0.5 mA
C
10
8
SOURCE RESISTANCE = 200
= 0.5 mA
I
= 50
A
A
C
I
C
6
I
= 100
SOURCE RESISTANCE = 1.0 k
= 50
C
6
4
2
0
I
A
C
4
2
0
SOURCE RESISTANCE = 500
I
= 100
A
C
MMBT3904WT1
20
40
MMBT3904WT1
20
40
0.1
0.2
0.4
1.0
2.0
4.0
10
100
0.1
0.2
0.4
1.0
R , SOURCE RESISTANCE (k OHMS)
S
2.0
4.0
10
100
f, FREQUENCY (kHz)
Figure 9. Noise Figure
Figure 10. Noise Figure
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3904WT1
h PARAMETERS
(V
= 10 Vdc, f = 1.0 kHz, T = 25°C)
CE
A
300
200
100
50
MMBT3904WT1
MMBT3904WT1
20
10
5
100
70
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
I , COLLECTOR CURRENT (mA)
C
1.0
2.0 3.0
5.0
10
I
, COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
MMBT3904WT1
MMBT3904WT1
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
I
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
, COLLECTOR CURRENT (mA)
C
1.0
2.0 3.0
5.0
10
, COLLECTOR CURRENT (mA)
I
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
MMBT3904WT1
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T
= +125°C
J
V
= 1.0 V
MMBT3904WT1
CE
+25
°
C
C
0.7
0.5
–55
°
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
, COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T
= 25°C
J
MMBT3904WT1
I
= 1.0 mA
10 mA
30 mA
100 mA
C
0.2
0
0.01
0.02
0.03
0.05
0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
, BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.2
1.0
T
= 25°C
MMBT3904WT1
J
MMBT3904WT1
V
@ I /I =10
C B
BE(sat)
+25°C TO +125°C
1.0
0.8
0.5
0
FOR V
VC
CE(sat)
–55°C TO +25
°C
V
@ V
=1.0 V
CE
BE
0.6
0.4
–0.5
–1.0
–55
°
C TO +25
°
C
V
@ I /I =10
C B
CE(sat)
+25°C TO +125°C
FOR V
BE(sat)
0.2
0
–1.5
–2.0
VB
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
I , COLLECTOR CURRENT (mA)
C
80
100 120 140
160 180 200
I
, COLLECTOR CURRENT (mA)
C
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906WT1
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
10 k
0
C
< 4 pF*
C < 4 pF*
S
S
1N916
+10.6 V
300 ns
10 < t < 500
s
1
t
10.9 V
1
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
T
= 25°C
= 125°C
J
J
10
5000
MMBT3906WT1
V
= 40 V
MMBT3906WT1
CC
/I = 10
3000
2000
7.0
I
C B
Q
T
5.0
C
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 21. Capacitance
Figure 22. Charge Data
500
500
MMBT3906WT1
I
/I = 10
V
= 40 V
C B
CC
= I
300
200
300
200
MMBT3906WT1
I
B1 B2
I
/I = 20
C B
100
100
70
50
70
50
t @ V
r
= 3.0 V
CC
I
/I = 10
C B
30
20
15 V
30
20
40 V
2.0 V
10
7
10
7
t
@ V
= 0 V
OB
d
5
5
1.0
2.0 3.0
5.0 7.0 10
, COLLECTOR CURRENT (mA)
20 30
50 70 100
200
1.0
2.0 3.0
5.0 7.0
10
20
30
50 70 100
200
I
I
, COLLECTOR CURRENT (mA)
C
C
Figure 23. Turn–On Time
Figure 24. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
MMBT3906WT1
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
= –5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
CE
A
5.0
4.0
12
SOURCE RESISTANCE = 200
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
I
= 0.5 mA
C
SOURCE RESISTANCE = 200
= 0.5 mA
I
8.0
C
3.0
SOURCE RESISTANCE = 2.0 k
6.0
4.0
2.0
0
I
= 50
A
C
2.0
1.0
0
I
= 50 A
C
SOURCE RESISTANCE = 2.0 k
I
= 100 A
C
I
= 100
A
C
MMBT3906WT1
MMBT3906WT1
20
40
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
100
f, FREQUENCY (kHz)
R
, SOURCE RESISTANCE (kΩ)
S
Figure 25.
Figure 26.
h PARAMETERS
(V
= –10 Vdc, f = 1.0 kHz, T = 25°C)
CE
A
100
70
300
200
MMBT3906WT1
MMBT3906WT1
50
30
20
100
70
10
50
7.0
5.0
30
0.1
0.2 0.3
I
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
, COLLECTOR CURRENT (mA)
C
2.0 3.0
5.0 7.0 10
, COLLECTOR CURRENT (mA)
I
C
Figure 27. Current Gain
Figure 28. Output Admittance
20
10
10
7.0
5.0
MMBT3906WT1
MMBT3906WT1
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0
, COLLECTOR CURRENT (mA)
C
5.0 7.0 10
I
, COLLECTOR CURRENT (mA)
I
C
Figure 29. Input Impedance
Figure 30. Voltage Feedback Ratio
8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906WT1
STATIC CHARACTERISTICS
2.0
T
= +125°C
J
V
= 1.0 V
CE
+25
°
C
C
1.0
0.7
0.5
–55
°
0.3
0.2
MMBT3906WT1
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
, COLLECTOR CURRENT (mA)
C
Figure 31. DC Current Gain
1.0
0.8
T
= 25°C
J
MMBT3906WT1
I
= 1.0 mA
10 mA
30 mA
100 mA
C
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
, BASE CURRENT (mA)
B
Figure 32. Collector Saturation Region
1.0
0.8
1.0
V
@ I /I = 10
C B
BE(sat)
T
= 25°C
J
0.5
0
FOR V
+25°C TO +125°C
VC
CE(sat)
V
@ V
= 1.0 V
CE
BE
–55
°
C TO +25
°
C
C
0.6
0.4
0.2
0
–0.5
–1.0
–1.5
–2.0
MMBT3906WT1
MMBT3906WT1
+25°C TO +125°C
FOR V
VS
BE(sat)
–55°C TO +25
°
V
@ I /I = 10
C B
CE(sat)
1.0
2.0
5.0 10
20
50
100
200
0
20
40
60
I , COLLECTOR CURRENT (mA)
C
80
100 120 140
160 180 200
I
, COLLECTOR CURRENT (mA)
C
Figure 33. “ON” Voltages
Figure 34. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SOT–323/SC–70
SOT–323/SC–70 POWER DISSIPATION
The power dissipation of the SOT–323/SC–70 is a function
SOLDERING PRECAUTIONS
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
values provided on the data sheet for the SOT–323/SC–70
A
package, P can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 150 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
833°C/W
P
=
= 150 milliwatts
D
The 833°C/W for the SOT–323/SC–70 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–323/SC–70
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad . Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
NOTES:
L
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MILLIMETERS
B
S
DIM
A
B
C
D
G
H
J
MIN
MAX
0.087
0.053
0.049
0.016
0.055
0.004
0.010
MIN
1.80
1.15
0.90
0.30
1.20
0.00
0.10
MAX
2.20
1.35
1.25
0.40
1.40
0.10
0.25
1
2
0.071
0.045
0.035
0.012
0.047
0.000
0.004
D
V
G
K
L
N
R
S
0.017 REF
0.026 BSC
0.028 REF
0.425 REF
0.650 BSC
0.700 REF
R
N
J
0.031
0.079
0.012
0.039
0.087
0.016
0.80
2.00
0.30
1.00
2.20
0.40
C
V
0.05 (0.002)
K
H
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 419–02
ISSUE G
SOT–323/SC–70
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
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MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
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MMBT3904WT1/D
◊
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