PZT3904T1 [ONSEMI]
General Purpose Transistor; 通用晶体管
| 型号： | PZT3904T1 |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistor |
| 文件： | 总8页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT3904T1
Preferred Device
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol Value
Unit
Vdc
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V
CEO
V
CBO
V
EBO
40
60
Vdc
COLLECTOR
2, 4
6.0
200
Vdc
Collector Current − Continuous
I
C
mAdc
1
THERMAL CHARACTERISTICS
Characteristic
BASE
Symbol
Max
Unit
3
Total Device Dissipation (Note 1)
T = 25°C
A
P
D
1.5
12
W
mW/°C
EMITTER
Thermal Resistance Junction−to−Ambient
(Note 1)
R
83.3
°C/W
q
JA
JA
MARKING
DIAGRAM
Thermal Resistance Junction−to−Lead #4
Junction and Storage Temperature Range
R
35
°C/W
°C
q
T , T
J
−55 to
+150
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
AWW
1AM
SOT−223
CASE 318E
Style 1
2
1. FR−4 with 1 oz and 713 mm of copper area.
1AM = Specific Device Code
= Assembly Location
WW = Work Week
A
ORDERING INFORMATION
†
Device
PZT3904T1
Package
Shipping
SOT−223
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
May, 2004 − Rev. 1
PZT3904T1/D
PZT3904T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS (Note 2)
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3)
V
40
60
6.0
−
−
−
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
−
E
C
Base Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
BL
50
50
nAdc
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
−
CEX
CE
EB
ON CHARACTERISTICS (Note 3)
DC Current Gain (Note 2)
H
−
FE
(I = 0.1 mAdc, V = 1.0 Vdc)
40
70
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
100
60
300
−
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
0.65
−
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
300
−
−
MHz
pF
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
5.0
8.0
10
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
−
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
Input Impedance
h
1.0
0.5
100
1.0
−
kW
ie
re
fe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
CE
C
−4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
8.0
400
40
X 10
CE
C
Small−Signal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
−
CE
C
Output Admittance
h
oe
mmhos
dB
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
nF
5.0
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 kW, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
35
35
ns
d
(V = 3.0 Vdc, V = −0.5 Vdc,
CC
BE
I
C
= 10 mAdc, I = 1.0 mAdc)
B1
Rise Time
t
r
Storage Time
200
50
s
(V = 3.0 Vdc,
CC
I
= 10 mAdc, I = I = 1.0 mAdc)
C
B1 B2
Fall Time
t
f
2. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
PZT3904T1
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
−
0.5 V
C < 4 pF*
S
C < 4 pF*
S
1N916
−ꢀ9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
PZT3904T1
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
= 40 V
CC
I /I = 10
3000
2000
7.0
C B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
= 40 V
CC
I /I = 10
300
200
300
200
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
10
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Rise Time
500
500
1
t′ = t − / t
8 f
s
s
V
I
= 40 V
CC
300
200
300
200
I = I
B1 B2
= I
B1 B2
I /I = 20
C B
I /I = 10
C B
I /I = 20
C B
100
70
100
70
I /I = 20
C B
50
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
10
7
5
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
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4
PZT3904T1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
10
8
14
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
C
= 1.0 mA
I
C
12
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
= 50 mA
I
C
6
4
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
= 50 mA
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500 W
= 100 mA
I
C
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k W)
S
Figure 9.
Figure 10.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
50
20
10
5
100
70
50
30
2
1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
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5
PZT3904T1
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
−ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.2
1.0
0.8
1.0
T = 25°C
J
V
@ I /I =10
C B
BE(sat)
+25°C TO +125°C
−ꢀ55°C TO +25°C
0.5
0
q
FOR V
CE(sat)
VC
V
BE
@ V =1.0 V
CE
0.6
0.4
−ꢀ0.5
−ꢀ1.0
−ꢀ55°C TO +25°C
+25°C TO +125°C
V
@ I /I =10
C B
CE(sat)
q
FOR V
BE(sat)
VB
0.2
0
−ꢀ1.5
−ꢀ2.0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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6
PZT3904T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
DIM MIN MAX
MILLIMETERS
S
B
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
D
G
H
J
L
0.0008 0.0040 0.020
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
0.24
1.50
0.85
0
J
K
L
C
M
S
_
_
_
_
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
1.5
0.059
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7
PZT3904T1
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PZT3906T1/D
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