PZTA29 [ONSEMI]

NPN达林顿晶体管;


型号：	PZTA29
厂家：	ONSEMI
描述：	NPN达林顿晶体管光电二极管晶体管达林顿晶体管
文件：	总4页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

NPN Darlington Transistor

PZTA29

MARKING DIAGRAM

AYW

A29

Description

SOT−223

CASE 318H

This device is designed for applications requiring extremely high

current gain at collector currents to 500 mA. Sourced from process 03.

= Assembly Location

= Date Code

= Specific Device Code

A29

Features

• These are Pb−Free Devices

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Note 1, Note 2)

ORDERING INFORMATION

†

Device

Package

Shipping

Symbol

Parameter

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Value

100

Unit

PZTA29

SOT−223

4000 / Tape & Reel

CES

CBO

EBO

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

100

Collector Current − Continuous

800

°C

T , T

Operating and Storage Junction

Temperature Range

−55 to + 150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. onsemi should be consulted on application

involving pulsed or low duty cycle operations.

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Total Device Dissipation

Max

1000

8.0

Unit

Derate Above 25_C

Thermal Resistance, Junction to Ambient

mW/_C

_C/W

125

3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for

the collector lead minimum 6cm .

Publication Order Number:

October, 2021 − Rev. 2

PZTA29/D

PZTA29

ELECTRICAL CHARACTERISTICS (Note 4) (T = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

Collector−Base Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cut−Off Current

= 100 mA, V = 0

100

(BR)CES

(BR)CBO

(BR)EBO

= 100 mA, I = 0

= 10 mA, I = 0

= 80 V, I = 0

100

500

100

CBO

Collector Cut−Off Current

= 80 V, V = 0

CES

EBO

Emitter Cut−Off Current

= 10 V, I = 0

ON CHARACTERISTICS

DC Current Gain

= 10 mA, V = 5.0 V

10,000

= 100 mA, V = 5.0 V

(sat)

Collector−Emitter Saturation Voltage

Base−Emitter On Voltage

= 10 mA, I = 0.01 mA

1.2

1.5

2.0

= 100 mA, I = 0.1 mA

= 100 mA, V = 5.0 V

BE(on)

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

Output Capacitance

= 15 mA, V = 5.0 V, f = 100 MHz

125

MHz

= 1.0 V, I = 0, f = 1.0 MHz

8.0

obo

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%.

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−223

CASE 318H

ISSUE B

DATE 13 MAY 2020

SCALE 2:1

= Assembly Location

= Year

= Work Week

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

= Pb−Free Package

(Note: Microdot may be in either location)

AYW

XXXXXG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASH70634A

SOT−223

PAGE 1 OF 1

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