QED123 [ONSEMI]
AlGaAs红外线发光二极管;
| 型号： | QED123 |
| 厂家： | 
ONSEMI |
| 描述： | AlGaAs红外线发光二极管 光电 二极管 |
| 文件： | 总7页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2008
QED121, QED122, QED123
Plastic Infrared Light Emitting Diode
Features
PACKAGE DIMENSIONS
Description
■ λ = 880nm
The QED121, QED122 and QED123 are 880nm
AlGaAs LEDs encapsulated in a clear peach tinted,
plastic T-1 3/4 package.
■ Chip material = AlGaAs
■ Package type: T-1 3/4 (5mm lens diameter)
■ Matched photosensor: QSD122/QSD123/QSD124
■ Narrow emission angle, 16°
■ High output power
■
Package material and color: clear, peach tinted, plastic
Package Dimensions
0.195 (4.95)
REFERENCE
SURFACE
0.305 (7.75)
0.040 (1.02)
NOM
0.800 (20.3)
MIN
CATHODE
Schematic
0.050
(1.25)
0.100 (2.54)
NOM
ANODE
CATHODE
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is 0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2001 Fairchild Semiconductor Corporation
QED121, QED122, QED123 Rev. 1.0.1
www.fairchildsemi.com
Absolute Maximum Ratings (T = 25°C unless otherwise specified)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
Units
°C
T
Operating Temperature
Storage Temperature
OPR
T
°C
STG
(2)(3)(4)
T
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Continuous Forward Current
Reverse Voltage
°C
SOL-I
(2)(3)
T
°C
SOL-F
I
mA
V
F
V
P
5
R
(1)
Power Dissipation
200
mW
D
Notes:
1. Derate power dissipation linearly 2.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics (T = 25°C)
A
Symbol
Parameter
Peak Emission Wavelength
Temperature Coefficient
Emission Angle
Test Conditions
Min.
Typ.
890
0.2
Max.
Units
λ
I = 20mA
nm
nm / °C
°
PE
F
TC
λ
1
2Θ /2
I = 100mA
16
F
V
Forward Voltage
I = 100mA, tp = 20ms
1.7
V
F
F
TC
Temperature Coefficient
Reverse Current
-6
mV / °C
µA
VF
I
V = 5V
10
40
R
R
I
I
I
Radiant Intensity QED121
Radiant Intensity QED122
Radiant Intensity QED123
Temperature Coefficient
Rise Time
I = 100mA, tp = 20ms
16
32
50
mW/sr
mW/sr
mW/sr
% / °C
ns
E
F
I = 100mA, tp = 20ms
100
E
E
F
I = 100mA, tp = 20ms
70
-0.3
900
800
11
F
TC
IE
t
I = 100mA
F
r
t
Fall Time
ns
f
C
Junction Capacitance
V = 0V
pF
j
R
©2001 Fairchild Semiconductor Corporation
QED121, QED122, QED123 Rev. 1.0.1
www.fairchildsemi.com
2
Typical Performance Curves
Figure 1. Normalized Intensity vs. Wavelength
Figure 2. Peak Wavelength vs. Ambient Temperature
1.0
910
908
906
904
902
900
898
896
894
I
= 20mA DC
F
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
700
750
800
850
900
(nm)
950
1,000
1,050
80
TA – AMBIENT TEMPERTURE (°C)
90
100
0
10
20
30
40
50
60
70
λ
Figure 4. Normalized Radient Intensity vs. Ambient Temperature
Figure 3. Normalized Radiant Intensity vs. Forward Current
10
1.3
Normalized to:
Normalized to:
I
t
= 20mA Pulsed
= 20mS
F
PW
I
t
= 100mA Pulsed
F
1.2
1.1
1.0
0.9
0.8
0.7
0.6
= 20mS
PW
Duty Cycle = 4%
= 25°C
Duty Cycle = 4%
= 25°C
T
A
T
A
1
0.1
10
105
-15
0
15
30
45
60
75
90
100
1000
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 5. Forward Voltage vs. Forward Current
5.0
4.0
3.0
2.0
1.0
0.0
2.1
2.0
1.9
1.8
1.7
1.6
1.5
I
t
= 20mA Pulsed
F
I
Pulsed
= 20mS
F
= 20mS
PW
t
PW
Duty Cycle = 4%
= 25°C
Duty Cycle = 4%
T
A
105
-15
0
15
30
45
60
75
90
10
100
1000
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
©2001 Fairchild Semiconductor Corporation
QED121, QED122, QED123 Rev. 1.0.1
www.fairchildsemi.com
3
Typical Performance Curves (Continued)
Figure 8. Coupling Characteristics of QED12X and QSD12X
Figure 7. Radiation Diagram
1.0
90°
Normalized to:
d = 0 inch
100°
80°
110°
70°
Pulse Width = 100µs
Duty Cycle = 0.1%
120°
60°
0.8
0.6
0.4
0.2
0.0
130°
50°
V
R
= 5V
= 100Ω
= 25°C
CC
L
140°
150°
160°
40°
T
A
30°
20°
I
= 100mA
F
170°
10°
I
= 20mA
F
180°
1.0
0°
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
0
1
2
3
4
5
6
LENS TIP SEPARATION (inches)
©2001 Fairchild Semiconductor Corporation
QED121, QED122, QED123 Rev. 1.0.1
www.fairchildsemi.com
4
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used herein:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
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system whose failure to perform can be reasonably expected to
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safety or effectiveness.
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under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The
datasheet is for reference information only.
Rev. I36
©2001 Fairchild Semiconductor Corporation
QED121, QED122, QED123 Rev. 1.0.1
www.fairchildsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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