QSD123A4R0 [ONSEMI]

塑料硅红外光电晶体管;
QSD123A4R0
型号: QSD123A4R0
厂家: ONSEMI    ONSEMI
描述:

塑料硅红外光电晶体管

晶体管 光电晶体管
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To learn more about onsemi™, please visit our website at  
www.onsemi.com  
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  
QSD123, QSD124  
Plastic Silicon Infrared Phototransistor  
Features  
Description  
NPN Silicon Phototransistor  
Package Type: T-1 3/4  
The QSD123/124 is a phototransistor encapsulated in  
an infrared transparent, black T-1 3/4 package.  
Matched Emitter: QED12X/QED22X/QED23X  
Narrow Reception Angle: 24°C  
Daylight Filter  
Package Material and Color: Black Epoxy  
High Sensitivity  
Package Dimensions  
0.195 (4.95)  
REFERENCE  
SURFACE  
0.305 (7.75)  
0.040 (1.02)  
0.800 (20.3)  
NOM  
MIN  
EMITTER  
COLLECTOR  
Schematic  
COLLECTOR  
0.500 (1.25)  
0.100 (2.54) NOM  
0.240 (6.10)  
0.215 (5.45)  
EMITTER  
0.020 (0.51)  
SQ. (2X)  
Notes:  
1. Dimensions for all drawings are in inches (mm).  
2. Tolerance of 0.010 (0.2ꢀ) on all non-nominal dimensions unless otherwise specified.  
©2012 Semiconductor Components Industries, LLC.  
October-2017, Rev. 2  
Publication Order Number:  
QSD123/D  
Absolute Maximum Ratings (T = 25°C unless otherwise specified)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Rating  
-40 to +100  
-40 to +100  
240 for ꢀ sec  
260 for 10 sec  
30  
Unit  
°C  
°C  
°C  
°C  
V
T
Operating Temperature  
OPR  
T
Storage Temperature  
STG  
(2,3,4)  
(2,3)  
T
Soldering Temperature (Iron)  
SOL-I  
T
Soldering Temperature (Flow)  
Collector-Emitter Voltage  
Emitter-Collector Voltage  
SOL-F  
V
V
CE  
EC  
V
(1)  
P
Power Dissipation  
100  
mW  
D
Notes:  
1. Derate power dissipation linearly 1.33mW/°C above 2ꢀ°C.  
2. RMA flux is recommended.  
3. Methanol or isopropyl alcohols are recommended as cleaning agents.  
4. Soldering iron 1/16” (1.6mm) minimum from housing.  
ꢀ. λ = 880nm, AlGaAs.  
Electrical/Optical Characteristics (T = 25°C)  
A
Symbol  
Parameter  
Test Conditions  
Min. Typ.  
Max. Units  
λ
Peak Sensitivity Wavelength  
Reception Angle  
880  
12  
nm  
°
PS  
Θ
I
Collector-Emitter Dark Current  
Collector-Emitter Breakdown  
Emitter-Collector Breakdown  
V
= 10V, Ee = 0  
100  
nA  
V
CEO  
CE  
BV  
BV  
I = 1mA  
30  
CEO  
C
I = 100µA  
V
ECO  
E
(ꢀ)  
2
I
On-State Collector Current  
Ee = 0.ꢀmW/cm , V = ꢀV  
C(ON)  
CE  
4
6
QSD123  
QSD124  
mA  
mA  
V
16  
29  
(ꢀ)  
2
V
Saturation Voltage  
Ee = 0.ꢀmW/cm , I = 0.ꢀmA  
0.4  
CE(SAT)  
C
t
Rise Time  
Fall Time  
V
= ꢀV, R = 100Ω, I = 0.2mA  
7
7
µs  
µs  
r
CC  
L
C
t
f
www.onsemi.com  
2
Typical Performance Characteristics  
Figure 1. Light Current vs. Radiant Intensity  
100  
Figure 2. Angular Response Curve  
90  
100  
80  
110  
70  
120  
60  
130  
50  
10  
40  
140  
150  
160  
170  
30  
20  
10  
1
180  
1.0  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.2  
0.4  
0.6  
0.8  
0.1  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
2
Ee - Radiant Intensity (mW/cm  
)
Figure 3. Dark Current vs. Collector - Emitter Voltage  
Figure 4. Light Current vs. Collector - Emitter Voltage  
101  
101  
2
I =1mW/cm  
e
2
I =0.5mW/cm  
e
100  
100  
2
2
I
=0.2mW/cm  
e
I
e
=0.1mW/cm  
10-1  
10-2  
10-3  
10-1  
10-2  
10-3  
Normalized to:  
= 5V  
V
CE  
2
I
= 0.5mW/cm  
o
e
T
= 25 C  
A
0
5
10  
15  
20  
25  
30  
0.1  
1
1
0
VCE - Collector-Emitter Voltage (V)  
VCE - Collector-Emitter Voltage (V)  
Figure 5. Dark Current vs. Ambient Temperature  
104  
Normalized to:  
V
CE  
= 25V  
103  
102  
101  
100  
10-1  
o
T
A
= 25 C  
V
CE  
=25V  
V
CE  
=10V  
-40  
-20  
0
20  
40  
60  
o C  
80  
100  
)
TA - Ambient Temperature (  
www.onsemi.com  
3
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
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