QSE114 [ONSEMI]
塑料硅红外光电晶体管;
| 型号： | QSE114 |
| 厂家： | 
ONSEMI |
| 描述： | 塑料硅红外光电晶体管 LTE 晶体管 光电晶体管 |
| 文件： | 总6页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
May 2015
QSE113 / QSE114
Plastic Silicon Infrared Phototransistor
Features
Description
• NPN Silicon Phototransistor
• Package Type: Sidelooker
• Medium Wide Reception Angle, 50°
• Package Material and Color: Black Epoxy
• Matched Emitter: QEE113
• Daylight Filter
The QSE113/114 is a silicon phototransistor encapsu-
lated in a wide angle, infrared transparent, black plastic
sidelooker package.
• High Sensitivity
• Blue dot marking on the top side
Package Dimensions(1, 2)
0.175 (4.44)
0.087 (2.22)
Ø 0.065 (1.65)
0.050 (1.27)
0.200 (5.08)
Ø 0.095 (2.41)
0.500 (12.70)
MIN
COLLECTOR
EMITTER
Schematic
0.020 (0.51) SQ.
(2X)
Collector
0.100 (2.54)
0.030 (0.76)
0.100 (2.54)
NOM
Emitter
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
QSE113 / QSE114 Rev. 2.1
1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCE
Parameter
Value
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
Unit
°C
°C
°C
°C
V
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(4, 5, 6)
Soldering Temperature (Flow)(4, 5)
Collector Emitter Voltage
VEC
Emitter Collector Voltage
5
V
PD
Power Dissipation(3)
100
mW
Notes:
3. Derate power dissipation linearly 1.33 mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
λPS
Parameter
Peak Sensitivity
Reception Angle
Collector Emitter Dark Current VCE = 10 V, Ee = 0
Conditions
Min.
Typ.
880
Max.
Unit
nm
°
Θ
±25
lCEO
100
nA
V
BVCEO
BVECO
Collector-Emitter Breakdown
IC = 1 mA
30
5
Emitter-Collector Breakdown
IE = 100 μA
V
On-State Collector Current(7)
QSE113
On-State Collector Current(7)
QSE114
0.25
1.00
1.50
0.4
IC(ON)
Ee = 0.5 mW/cm2, VCE = 5 V
Ee = 0.5 mW/cm2, IC = 0.1 mA
mA
VCE(SAT)
Saturation Voltage(7)
V
tr
tf
Rise Time
8
8
μs
μs
IC = 1 mA, VCC = 5 V,
RL = 100 Ω
Fall Time
Note:
7. λ = 880 nm (AlGaAs)
© 2002 Fairchild Semiconductor Corporation
QSE113 / QSE114 Rev. 2.1
www.fairchildsemi.com
2
Typical Performance Characteristics
101
V
CE
= 5V
GaAs Light Source
90
100
80
110
70
120
60
130
50
40
140
100
150
160
170
30
20
10
180
1.0
0
1.0
10-1
0.1
0.0
0.2
0.4
0.6
0.8
0.8
0.6
0.4
0.2
1
2
E
- Radiant Intensity (mW/cm )
e
Figure 1. Light Current vs. Radiant Intensity
Figure 2. Angular Response Curve
101
100
101
100
10-1
10-2
2
I
= 1mW/cm
e
2
I
I
= 0.5mW/cm
e
2
= 0.2mW/cm
= 0.1mW/cm
e
e
10-1
10-2
10-3
2
I
Normalized to:
V
= 5V
CE
2
I
e
= 0.5mW/cm
T
A
= 25°C
0
5
10
15
20
25
30
0.1
1
10
VCE - Collector-Emitter Voltage (V)
VCE - Collector-Emitter Voltage (V)
Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
104
Normalized to:
V
= 25V
CE
V
= 25V
V
CE
103
102
101
T
= 25°C
A
= 10V
CE
100
10-1
25
50
75
°C
100
)
TA - Ambient Temperature (
Figure 5. Dark Current vs. Ambient Temperature
© 2002 Fairchild Semiconductor Corporation
QSE113 / QSE114 Rev. 2.1
www.fairchildsemi.com
3
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
AccuPower¥
AttitudeEngine™
Awinda®
F-PFS¥
®*
FRFET®
Global Power ResourceSM
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
TinyBoost®
TinyBuck®
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TranSiC¥
®
AX-CAP®*
Power Supply WebDesigner¥
PowerTrench®
PowerXS™
BitSiC¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Programmable Active Droop¥
GTO¥
IntelliMAX¥
QFET®
QS¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
Quiet Series¥
RapidConfigure¥
¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
TriFault Detect¥
TRUECURRENT®*
μSerDes¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
ESBC¥
MicroPak¥
SMART START¥
Solutions for Your Success¥
SPM®
®
UHC®
MicroPak2¥
MillerDrive¥
MotionMax¥
MotionGrid®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
STEALTH¥
SuperFET®
MTi®
SuperSOT¥-3
MTx®
FAST®
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
MVN®
FastvCore¥
FETBench¥
FPS¥
mWSaver®
Xsens™
OptoHiT¥
❺
™
SyncFET¥
Sync-Lock™
OPTOLOGIC®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used herein:
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accordance with instructions for use provided in the labeling, can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I74
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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