RHRD660S9A [ONSEMI]
6A，600V，超快速二极管;
| 型号： | RHRD660S9A |
| 厂家： | 
ONSEMI |
| 描述： | 6A，600V，超快速二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总6页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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RHRD660, RHRD660S
Data Sheet
January 2002
6A, 600V Hyperfast Diodes
Features
The RHRD660 and RHRD660S are hyperfast diodes with
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
soft recovery characteristics (t < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
o
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49057.
Packaging
Ordering Information
JEDEC STYLE TO-251
PART NUMBER
PACKAGE
TO-251
TO-252
BRAND
ANODE
RHRD660
RHR660
RHR660
CATHODE
RHRD660S
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
Symbol
JEDEC STYLE TO-252
K
CATHODE
(FLANGE)
CATHODE
ANODE
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RHRD660, RHRD660S
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
600
600
600
6
V
V
V
A
RRM
RWM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
o
(T = 152 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
12
60
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
50
10
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
, T
STG
-65 to 175
C
J
o
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
PKG
©2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
RHRD660, RHRD660S
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITION
= 6A
MIN
TYP
MAX
2.1
1.7
100
500
30
35
-
UNITS
V
V
I
I
-
-
-
-
-
-
-
-
-
-
-
-
-
F
F
F
o
= 6A, T = 150 C
V
C
I
V
V
= 600V
-
µA
µA
ns
R
R
R
o
= 600V, T = 150 C
-
C
t
I
I
I
I
I
= 1A, dI /dt = 200A/µs
-
rr
F
F
F
F
F
F
= 6A, dI /dt = 200A/µs
-
ns
F
t
t
= 6A, dI /dt = 200A/µs
16
8.5
45
20
-
ns
a
F
= 6A, dI /dt = 200A/µs
-
ns
b
F
Q
= 6A, dI /dt = 200A/µs
-
nC
pF
RR
F
C
V
= 10V, I = 0A
-
J
R
F
o
R
3
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t + t .
a b
rr
t = Time to reach peak reverse current (See Figure 9).
a
t = Time from peak I
to projected zero crossing of I
based on a straight line from peak I
through 25% of I (See Figure 9).
RM
b
RM
= Reverse recovery charge.
RM
RM
Q
RR
C = Junction capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
30
1000
100
10
o
175 C
10
o
100 C
1
o
o
o
25 C
175 C
100 C
0.1
o
1
25 C
0.5
0.01
0
0.5
1
1.5
2
2.5
3
0
100
200
V , REVERSE VOLTAGE (V)
R
300
400
500
600
V , FORWARD VOLTAGE (V)
F
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE
©2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
RHRD660, RHRD660S
Typical Performance Curves (Continued)
30
25
50
40
30
20
10
0
o
o
T
= 25 C, dI /dt = 200A/µs
F
T
= 100 C, dI /dt = 200A/µs
C
C
F
t
t
rr
rr
20
15
t
a
t
a
10
5
t
b
t
b
0
0.5
1
6
0.5
1
6
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT
a
b
rr
a
b
75
60
45
30
15
0
6
5
4
3
2
1
0
o
T
= 175 C, dI /dt = 200A/µs
F
C
DC
t
rr
SQ. WAVE
t
a
t
b
140
145
150
155
160
165
o
170
175
0.5
1
6
I , FORWARD CURRENT (A)
T
, CASE TEMPERATURE ( C)
F
C
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 6. CURRENT DERATING CURVE
a
b
50
40
30
20
10
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
RHRD660, RHRD660S
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
F
G
L
t
t CONTROL I
1 AND
2 F
DUT
CURRENT
SENSE
dI
F
t
rr
R
I
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 8. t TEST CIRCUIT
rr
FIGURE 9. t WAVEFORMS AND DEFINITIONS
rr
I
= 1A
MAX
L = 20mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
- V )]
DD
AVL
= IGBT (BV
R(AVL) R(AVL)
V
AVL
Q
> DUT V )
R(AVL)
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
I
V
Q
1
V
DD
DUT
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT ANDVOLTAGE
WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关型号：
RHRD660S9A_F085
Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252, TO-252, 3 PIN
FAIRCHILD
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