RHRG1560-F085 [ONSEMI]
600 V、15 A、1.86 V、TO-247（2 引脚）超高速二极管;
| 型号： | RHRG1560-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、15 A、1.86 V、TO-247（2 引脚）超高速二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：2142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hyperfast Rectifier
15 A, 600 V
RHRG1560-F085
Description
The RHRG1560_F085 is an hyperfast diode with soft recovery
characteristics (trr < 55ns). It has half the recovery time of ultrafast
diode and is of silicon nitride passivated ion−implanted epitaxial
planar construction.
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This device is intended for use as a freewheeling/clamping diode
and rectifier in a variety of automotive switching power supplies
and other power switching automotive applications.
Its low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits, thus reducing
power loss in the switching transistors.
ANODE
CATHODE
TO−247−2L
Features
340CL
• High Speed Switching ( t = 26 ns (Typ.) @ I = 15 A )
rr
F
• Low Forward Voltage( V = 1.86 V (Typ.) @ I = 15 A )
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified
• This Device is Pb−Free
MARKING DIAGRAM
$Y&Z&3&K
RHRG1560
Applications
• Switching Power Supply
• Power Switching Circuits
• Automotive and General Purpose
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
600
600
15
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
$Y
= ON Semiconductor Logo
V
V
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
V
R
V
Average Rectified Forward Current
I
A
F(AV)
RHRG1560
= Specific Device Code
(T = 25 °C)
C
Non−repetitive Peak Surge Current
I
45
20
A
FSM
(Halfwave 1 Phase 50 Hz)
Avalanche Energy
(1 A, 40 mH)
E
mJ
°C
AVL
1. Cathode
2. Anode
Operating Junction and Storage
Temperature
T
T
−55 to
+175
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
March, 2020 − Rev. 3
RHRG1560−F085/D
RHRG1560−F085
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Max
1
Units
°C/W
°C/W
R
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
q
JC
R
45
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tube
Quantity
RHRG1560
RHRG1560−F085
TO−247
−
30
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
−
Max.
100
Unit
uA
uA
V
I
R
Instantaneous Reverse Current
V
= 600 V
T
C
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
= 175°C
−
−
−
R
−
1000
2.3
V
FM
Instantaneous Forward Voltage
Reverse Recovery Time
I = 15 A
F
1.86
(Note 1)
−
−
1.28
25
1.6
50
V
I = 1 A,
F
T
C
= 25°C
t
rr
ns
di/dt = 100 A/ms,
(Note 2)
V
CC
= 390 V
I = 15 A,
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
F
−
26
55
ns
ns
di/dt = 100 A/ms,
V
CC
= 390 V
−
−
137
−
ta
tb
rr
Reverse Recovery Time
I = 15 A,
15
11
21
−
−
−
ns
ns
nC
F
di/dt = 100 A/ms,
Q
Reverse Recovery Charge
V
CC
= 390 V
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
RHRG1560−F085
TEST CIRCUITS AND WAVEFORMS
V
GE
AMPLITUDE AND
R
CONTROL dl /dt
G
F
L
t AND t CONTROL I
1
2
F
DUT
CURRENT
SENSE
dI
F
T
rr
R
G
I
F
dt
t
t
b
+
a
V
GE
0
V
−
DD
IGBT
t
1
0.25I
RM
t
2
I
RM
Figure 1. Trr Test Circuit
Figure 2. Trr Waveforms and Definitions
I = 1 A
L = 40 mH
R < 0.1 W
2
E
AVL
= 1/2LI [V
/(V −V )]
R(AVL) R(AVL) DD
Q = IGBT (BV
> DUT V
)
V
AVL
1
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
t
2
t
0
1
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Waveforms
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3
RHRG1560−F085
TYPICAL PERFORMANCE CHARECTERISTICS
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
Figure 6. Typical Reverse
Current vs. Reverse Voltage
V , Reverse Voltage (V)
R
di/dt (A/ms)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse
Recovery Time vs. di/dt
T , Case Temperature (5C)
di/dt (A/ms)
C
Figure 9. Typical Reverse Recovery
Current vs. di/dt
Figure 10. Forward Current Derating Curve
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4
RHRG1560−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
di/dt, (A/ms)
Figure 11. Reverse Recovery Charge
t , Square Wave Pulse Duration (s)
1
Figure 12. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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