RHRG1560CC-F085 [ONSEMI]
600V，15A，1.86V，TO-247，Hyperfast 双二极管;
| 型号： | RHRG1560CC-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，15A，1.86V，TO-247，Hyperfast 双二极管 二极管 |
| 文件： | 总7页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
15 A, 600 V Hyperfast
Rectifier
RHRG1560CC-F085
www.onsemi.com
Max Ratings (600 V, 15 A)
The RHRG1560CC−F085 is an Hyperfast diode with soft recovery
characteristics (t < 55 ns). It has half the recovery time of ultrafast
rr
diode and is of silicon nitride passivated ion−implanted epitaxial
planar construction. This device is intended for use as a
freewheeling/clamping diode and rectifier in a variety of automotive
switching power supplies and other power switching automotive
applications.
Its low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits, thus reducing
power loss in the switching transistors.
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
Features
$Y&Z&3&K
RHRG1560C
• High Speed Switching (t = 26 ns(Typ.) @ I = 15 A)
rr
F
• Low Forward Voltage (V = 1.86 V(Typ.) @ I = 15 A)
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified and PPAP Capable
RHRG1560C
= Specific Device Code
= ON Semiconductor Logo
= Assembly Lot Code
= Numeric Date Code
= Assembly Location
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
$Y
&Z
&3
&K
Compliant
Applications
• Switching Power Supply
• Power Switching Circuits
• Automotive and General Purpose
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2019 − Rev. 4
RHRG1560CC−F085/D
RHRG1560CC−F085
PIN ASSIGNMENTS
K
JEDEC STYLE T0−247
ANODE 1
CATHODE
ANODE 2
CATHODE
(BOTTOM
SIDE METAL)
A1
A2
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless Otherwise Noted)
C
Symbol
Parameter
Peak Repetitive Reverse Voltage
Ratings
Units
V
600
V
RRM
RWM
V
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
15
V
V
A
V
R
Average Rectified Forward Current @ T = 25_C
I
C
F(AV)
I
Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz)
45
20
A
FSM
E
Avalanche Energy (1 A, 40 mH)
mJ
°C
AVL
T , T
J
Operating Junction and Storage Temperature
− 55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted)
C
Symbol
RθJC
Parameter
Max
1.37
45
Units
°C/W
°C/W
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
RθJA
PACKAGE MARKING AND ORDIRING INFORMATION
Device Marking
Device
Package
Tube
Quantity
RHRG1560C
RHRG1560CC−F085
TO−247
−
30
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted)
C
Symbol
Parameter
Conditions
= 600 V
R
Min. Typ. Max Units
T
= 25°C
I
R
Instantaneous Reverse Current
V
−
−
−
−
100
C
mA
mA
T
C
= 175°C
1000
Instantaneous Forward Voltage
Reverse Recovery Time
I = 15 A
T
= 25°C
= 175°C
−
−
1.86
1.28
2.3
1.6
V
V
V
F
C
FM
(Note 1)
T
C
I =1 A, di/dt = 100 A/ms, V = 390 V
t
T
C
= 25°C
−
25
50
ns
F
CC
rr
(Note 2)
I =15 A, di/dt = 100 A/ms, V = 390 V
T = 25°C
C
−
−
26
137
55
−
ns
ns
F
CC
T
C
= 175°C
t
Reverse Recovery Time
I =15 A, di/dt = 100 A/ms, V = 390 V
ns
ns
nC
T
C
= 25°C
−
−
−
15
11
21
−
−
−
a
F
CC
t
b
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%.
2. Guaranteed by design.
www.onsemi.com
2
RHRG1560CC−F085
TEST CIRCUIT AND WAVEFORMS
V
GE
AMPLITUDE AND
R
G
CONTROL dI /dt
L
F
t1 AND t2 CONTROL I
F
dI
F
t
rr
I
F
dt
DUT
CURRENT
SENSE
t
t
b
a
R
G
0
+
V
−
V
DD
GE
IGBT
0.25 I
t
RM
1
I
RM
t
2
Figure 1. trr Test Circuit
Figure 2. trr Waveforms and Definitions
I = 1 A
L = 40 mH
R < 0.1 W
V
2
AVL
E
AVL
= 1/2LI [V
/(V − V )]
R(AVL) DD
R(AVL)
Q
1
= IGBT (BV
> DUT V
)
CES
R(AVL)
L
R
I
I
L
L
+
V
CURRENT
SENSE
I V
DD
Q
1
V
DD
t
t
t
2
t
0
1
DUT
−
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Waveforms
www.onsemi.com
3
RHRG1560CC−F085
TYPICAL PERFORMANCE CHARACTERISTICS
100
10
1
1000
100
10
T
C
= 1755C
C
T
= 1755C
C
T
= 1255C
1
0.1
T
= 1255C
5
C
0.01
1E−3
1E−4
TT =2555C
C
T
= 255C
C
0.1
0.1
0.5
1.0
1.5
2.0
2.5
100
200
300
400
500
600
Forward Voltage, V [V]
Reverse Voltage, V [V]
F
R
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
Figure 6. Typical Reverse Current vs.
Reverse Voltage
150
100
50
0
150
100
50
0
Typical Capacitance
at 10 V = 51 pF
I
= 15 A
F
T
= 1755C
C
T
= 1255C
C
T
= 255C
C
100
200
300
400
500
0.1
1
10
100
Reverse Voltage, V [V]
di/dt [A/ms]
R
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse Recovery Time
vs. di/dt
20
15
10
5
90
I
F
= 15 A
T
= 1755C
C
60
30
0
T
= 1255C
C
T
= 255C
C
0
100
200
300
di/dt [A/ms]
400
500
25
50
75
100
125
150
175
Case Temperature, T [5C]
C
Figure 9. Typical Reverse Recovery
Current vs. di/dt
Figure 10. Forward Current Derating Curve
www.onsemi.com
4
RHRG1560CC−F085
800
600
400
200
0
I
= 15 A
F
T
= 1755C
C
T
= 1255C
= 255C
C
T
C
100
200
300
400
500
di/dt [A/ms]
Figure 11. Reverse Recovery Charge
2
1
D=0.5
0.2
0.1
P
DM
t1
t2
0.05
0.02
0.1
*Notes:
1. Z (t) = 1.375C/W Typ.
q
JC
2. Duty Factor, D = t /t
1 2
0.01
3. T − T = P
y Z (t)
q
JM
C
DM
JC
single pulse
10−4
0.01
10−5
10−3
10−2
10−1
100
101
102
t , Square Wave Pulse Duration [sec]
1
Figure 12. Transient Thermal Response Curve
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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