RHRG30120 [ONSEMI]
30A，1200V，极快速二极管;
| 型号： | RHRG30120 |
| 厂家： | 
ONSEMI |
| 描述： | 30A，1200V，极快速二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总6页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hyperfast Diode
30 A, 1200 V
RHRG30120
Description
The RHRG30120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling/clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
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CATHODE
(BOTTOM
SIDE METAL)
CATHODE
ANODE
Features
TO−247
2 LEAD
CASE 340CL
• Hyperfast Recovery t = 85 ns (@ I = 30 A)
rr
F
• Max Forward Voltage, V = 3.2 V (@ T = 25°C)
F
C
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
MARKING DIAGRAM
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
$Y&Z&3&K
RHRG30120
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
1200
1200
1200
30
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
V
R
V
Average Rectified Forward Current
I
A
F(AV)
(T = 80°C)
C
RHRG30120
= Specific Device Code
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
I
60
A
A
FRM
K
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
I
300
FSM
Maximum Power Dissipation
P
125
30
W
D
Avalanche Energy
(See Figures 7 and 8)
E
AVL
mJ
Operating and Storage Temperature
T
STG
, T
−65 to 175
°C
J
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
December, 2020 − Rev. 3
RHRG30120/D
RHRG30120
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Shipping
RHRG30120
RHRG30120
TO−247−2L
450/Tube
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
3.2
Unit
V
V
F
Instantaneous Forward Voltage
(Pulse Width = 300 ms, Duty Cycle = 2%)
I = 30 A
F
I = 30 A,
2.6
V
F
C
T
= 150°C
I
R
Instantaneous Reverse Current
V
V
= 1200 V
250
1
mA
R
= 1200 V
= 150°C
mA
R
C
T
t
Reverse Recovery Time (See Figure 6)
Summation of t + t
I = 1 A,
F
65
85
ns
ns
ns
ns
rr
F
di /dt = 100 A/ms
a
b
I = 30 A,
F
di /dt = 100 A/ms
F
t
t
Time to Reach Peak Reverse Current (See Figure 6)
Time from Peak I to Projected Zero Crossing of I
I = 30 A,
48
22
a
F
di /dt = 100 A/ms
F
I = 30 A,
b
RM
RM
F
Based on a Straight Line from Peak I
Through 25%
di /dt = 100 A/ms
RM
F
of I
(See Figure 6)
RM
R
Thermal Resistance Junction to Case
1.2
°C/W
q
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
RHRG30120
TYPICAL PERFORMANCE CURVES
200
100
500
100
o
175 C
10
1.0
0.1
o
o
100 C
175 C
o
100 C
10
o
25 C
o
25 C
0.01
1
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
200
400
600
800
1000
1200
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
100
40
75
50
25
0
30
DC
T
t
rr
20
SQ.WAVE
a
10
0
t
b
25
50
75
100
125
150
175
1
10
30
V , Forward Current (A)
F
T , Case Temperature (5C)
C
Figure 3. Trr, ta and tb Curves vs. Forward Current
Figure 4. Current Derating Curve
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3
RHRG30120
TEST CIRCUITS AND WAVEFORMS
V
GE
AMPLITUDE AND
R
CONTROL dl /dt
G
F
L
t AND t CONTROL I
1
2
F
DUT
CURRENT
SENSE
dI
F
T
rr
R
G
I
F
dt
t
t
b
+
a
V
GE
0
V
−
DD
IGBT
t
1
0.25I
RM
t
2
I
RM
Figure 5. Trr Test Circuit
Figure 6. Trr Waveforms and Definitions
I
= 1.225 A
MAX
L = 40 mH
R < 0.1 W
2
E
AVL
= 1/2LI [V
/(V −V )]
R(AVL) R(AVL) DD
Q1 = IGBT (BV
> DUT V
)
V
AVL
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
L
I
L
DD
IV
Q
1
V
DD
DUT
−
t
t
t
2
t
0
1
Figure 7. Avalanche Energy Test Circuit
Figure 8. Avalanche Current and Voltage Waveforms
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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相关型号：
RHRG30120_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247
FAIRCHILD
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