RHRG3060 [ONSEMI]

30A，600V，超快二极管;


型号：	RHRG3060
厂家：	ONSEMI
描述：	30A，600V，超快二极管二极管
文件：	总6页 (文件大小：388K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Hyperfast Diode

30 A, 400 V − 600 V

RHRG3040, RHRG3060

Description

The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery

characteristics. It has the half recovery time of ultrafast diodes and is

silicon nitride passivated ionimplanted epitaxial planar construction.

These devices are intended to be used as freewheeling/clamping

diodes and diodes in a variety of switching power supplies and other

power switching applications. Their low stored charge and hyperfast

soft recovery minimize ringing and electrical noise in many power

switching circuits reducing power loss in the switching transistors.

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CATHODE

(BOTTOM

Features

SIDE METAL)

ANODE

• Hyperfast Recovery t = 45 ns (@ I = 30 A)

TO−247−2LD

CASE 340CL

• Max Forward Voltage, V = 2.1 V (@ T = 25°C)

• 400 V, 600 V Reverse Voltage and High Reliability

• Avalanche Energy Rated

• These Devices are Pb−Free and are RoHS Compliant

SYMBOL

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

MARKING DIAGRAM

$Y&Z&3&K

RHRG30XX

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

RHRG30XX

= Specific Device Code

= 40, 60

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

March, 2020 − Rev. 3

RHRG3060/D

RHRG3040, RHRG3060

ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise specified)

Parameter

Peak Repetitive Reverse Voltage

Symbol

RHRG3040

RHRG3060

Unit

400

600

RRM

RWM

Working Peak Reverse Voltage

DC Blocking Voltage

400

600

Average Rectified Forward Current (T = 120°C)

F(AV)

Repetitive Peak Surge Current (Square Wave, 20 kHz)

Non−repetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz)

Maximum Power Dissipation

FRM

325

FSM

125

°C

Avalanche Energy (See Figures 10 and 11)

Operating and Storage Temperature

AVL

, T

−65 to 175

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

PACKAGE MARKING AND ORDERING INFORMATION

Device

Device Marking

RHRG3040

Package

Shipping

450 / Tube

RHRG3040

RHRG3060

TO−247−2LD

RHRG3060

ELECTRICAL SPECIFICATION (T = 25°C, unless otherwise specified)

RHRG3040

Typ

RHRG3060

Min

−

Max

2.1

1.7

250

−

Min

−

Typ

−

Max

2.1

1.7

−

Characteristics

Symbol

Test Condition

Unit

Instantaneous Forward Voltage

(Pulse Width = 300 ms,

Duty Cycle = 2%)

I = 30 A

−

I = 30 A, T = 150°C

−

Instantaneous Reverse Current

= 400 V

= 600 V

−

250

−

= 400 V, T = 150°C

−

1.0

−

= 600 V, T = 150°C

−

1.0

−

Reverse Recovery Time

(See Figure 9)

−

I = 1 A, dI /dt = 200 A/ms

I = 30 A, dI /dt = 200 A/ms

−

Summation of t + t

Time to Reach Peak Reverse

Current (See Figure 9)

I = 30 A, dI /dt = 200 A/ms

−

Time from Peak I

to Projected

I = 30 A, dI /dt = 200 A/ms

−

Zero Crossing of I

Based

on a Straight Line from Peak I

through 25% of I

(See Figure 9)

Reverse Recovery Charge

Junction Capacitance

I = 30 A, dI /dt = 200 A/ms

−

100

−

100

−

V = 10 V, I = 0 A

R F

Thermal Resistance Junction

to Case

1.2

°C/W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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RHRG3040, RHRG3060

TYPICAL PERFORMANCE CURVES

300

100

2000

175°C

100°C

100

100°C

175°C

25°C

0.1

0.01

25°C

200

300

400

500

600

100

V , Reverse Voltage (V)

V , Forward Voltage (V)

Figure 2. Reverse Current vs. Reverse Voltage

Figure 1. Forward Current vs. Forward Voltage

100

= 25°C, dI /dt = 200 A/ms

= 100°C, dI /dt = 200 A/ms

I , Forward Current (A)

Figure 4. t_rr, t_aand t_bCurves vs. Forward Current

Figure 3. t_rr, t_aand t_bCurves vs. Forward Current

150

125

100

= 175°C, dI /dt = 200 A/ms

SQ. WAVE

100

125

150

175

I , Forward Current (A)

T , Case Temperature (°C)

Figure 6. Current Derating Curve

Figure 5. t_rr, t_aand t_bCurves vs. Forward Current

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RHRG3040, RHRG3060

TYPICAL PERFORMANCE CURVES (continued)

150

125

100

200

100

150

V , Reverse Voltage (V)

Figure 7. Junction Capacitance vs. Reverse Voltage

TEST CIRCUITS AND WAVEFORMS

AMPLITUDE AND

CONTROL dI /dt

t AND t Control I

DUT CURRENT

SENSE

0.25 I

−

IGBT

Figure 9. t_rrWaveforms and Definitions

Figure 8. t_rrTest Circuit

= 1 A

MAX

L = 40 mH

R < 0.1 W

= 1/2LI [V

/(V

− V )]

R(AVL

AVL

R(AVL)

CES

R(AVL) DD

AVL

Q = IGBT (BV

> DUT V

)

CURRENT

SENSE

I V

DUT

−

Figure 11. Avalanche Current and Voltage

Waveforms

Figure 10. Avalanche Energy Test Circuit

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−2LD

CASE 340CL

ISSUE A

DATE 03 DEC 2019

GENERIC

MARKING DIAGRAM*

AYWWZZ

XXXXXXX

XXXX = Specific Device Code

= Assembly Location

= Year

WW = Work Week

= Assembly Lot Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13850G

TO−247−2LD

PAGE 1 OF 1

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