RHRP1560-F102 [ONSEMI]
15 A、600 V 超高速二极管;型号: | RHRP1560-F102 |
厂家: | ONSEMI |
描述: | 15 A、600 V 超高速二极管 二极管 |
文件: | 总6页 (文件大小:743K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
RHRP1540, RHRP1560
Data Sheet
November 2013
Features
15 A, 400 V - 600 V,
Hyperfast Diode
The RHRP1540, RHRP1560 is a hyperfast diode with soft
recovery characteristics. It has the half recovery time of
ultrafast diodes and is silicon nitride passivated
ionimplanted epitaxial planar construction. These devices
are intended to be used as freewheeling/ clamping
diodes and diodes in a variety of switching power
supplies and other power switching applications. Their
low stored charge and hyperfast soft recovery minimize
ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
• Hyperfast Recovery trr = 40 ns (@ IF = 15 A)
• Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
• 400 V, 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
Packaging
PART NUMBER
PACKAGE
TO-220AC-2L
TO-220AC-2L
BRAND
RHRP1540
RHRP1560
JEDEC TO-220AC
RHRP1540
ANODE
RHRP1560
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
RHRP1540
400
RHRP1560
600
UNIT
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
400
600
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
400
600
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
15
15
F(AV)
o
(T = 140 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20 kHz)
30
30
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60 Hz)
200
200
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
100
20
100
20
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
, T
STG
-65 to 175
-65 to 175
C
J
©2001 Semiconductor Components Industries, LLC.
1
Publication Order Number:
October-2017, Rev. 3
RHRP1560/D
RHRP1540, RHRP1560
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
RHRP1540
RHRP1560
SYMBOL
TEST CONDITION
MIN
TYP
MAX
2.1
1.7
100
-
MIN
TYP
MAX
2.1
1.7
-
UNIT
V
I
I
= 15 A
V
F
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
F
o
= 15 A, T = 150 C
C
V
F
V
V
V
V
I
= 400 V
I
-
-
µA
µA
µA
µA
ns
R
R
= 600 V
-
-
100
-
R
R
R
o
= 400 V, T = 150 C
C
-
500
-
-
o
= 600 V, T = 150 C
C
-
-
500
35
40
-
= 1 A, dI /dt = 100 A/µs
T
-
35
40
-
-
F
F
rr
I
I
I
I
= 15 A, dI /dt = 100 A/µs
-
-
ns
F
F
F
F
F
= 15 A, dI /dt = 100 A/µs
t
20
15
40
60
-
20
15
40
60
-
ns
F
a
= 15 A, dI /dt = 100 A/µs
t
-
-
ns
F
b
= 15 A, dI /dt = 100 A/µs
Q
-
-
nC
pF
F
rr
V
= 10 V, I
=
A
0
C
J
-
-
R
F
o
R
1.5
1.5
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µs, D = 2%).
F
I
= Instantaneous reverse current .
R
T
= Reverse recovery time (See Figure 9), summation of t + t .
a b
rr
t = Time to reach peak reverse current (See Figure 9).
a
t = Time from peak I
to projected zero crossing of I
based on a straight line from peak I
through 25% of I
(See Figure 9).
RM
b
RM
RM
RM
Q
= Reverse Recovery Change.
rr
C = Junction Capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
100
1000
100
o
175 C
o
o
100 C
100 C
10
1
10
o
o
25 C
0.1
o
175 C
25 C
1
0.5
0.01
3
0.5
2
2.5
0
1.5
1
0
100
200
300
400
500
600
V , FORWARD VOLTAGE (V)
V
, REVERSE VOLTAGE (V)
F
R
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
www.onsemi.com
2
RHRP1540, RHRP1560
Typical Performance Curves (Continued)
50
40
30
100
80
o
T
= 100 C, dI /dt = 100A/µs
C
F
o
T
= 25 C, dI /dt = 100A/µs
C
F
T
rr
T
rr
60
t
t
a
20
10
a
40
20
t
b
t
b
0
0
0.5
1
5
10
15
0.5
5
10
15
1
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. T , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. T , t AND t CURVES vs FORWARD CURRENT
a
b
rr
a
b
15
12
175
150
o
T
= 175 C, dI /dt = 100A/µs
C
F
DC
125
100
SQ. WAVE
T
rr
9
6
75
t
b
50
25
0
3
0
t
a
115
160
100
130
145
175
0.5
1
5
10
15
I , FORWARD CURRENT (A)
o
F
T
, CASE TEMPERATURE ( C)
C
FIGURE 5. T , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 6. CURRENT DERATING CURVE
a
b
175
150
125
100
75
50
25
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
www.onsemi.com
3
RHRP1540, RHRP1560
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
F
G
L
t
t CONTROL I
1 AND
2 F
DUT
CURRENT
SENSE
dI
F
T
rr
R
I
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 9.Tt WAVEFORMS AND DEFINITIONS
rr
FIGURE 8. T TEST CIRCUIT
rr
I
= 1A
MAX
L = 40mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
- V )]
DD
AVL
= IGBT (BV
R(AVL) R(AVL)
V
AVL
Q
> DUT V )
R(AVL)
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
I
V
Q
1
V
DD
DUT
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT ANDVOLTAGE
WAVEFORMS
www.onsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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© Semiconductor Components Industries, LLC
www.onsemi.com
❖
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