RURG80100-F085 [ONSEMI]
80A，1000V，Ultrafast 整流器;
| 型号： | RURG80100-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 80A，1000V，Ultrafast 整流器 超快软恢复二极管 快速软恢复二极管 局域网 超快速软恢复能力电源 |
| 文件： | 总7页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultrafast Rectifier
80 A, 1000 V
RURG80100-F085
Description
The RURG80100−F085 is an ultrafast diode with low forward
voltage drop and soft recovery characteristics. Its low voltage drop and
ultrafast soft recovery minimize conduction loss and electrical noise in
power switching circuit. Meanwhile, the robust design and high
quality manufacture process make it a reliable device for heavy duty
automotive applications.
www.onsemi.com
This device is intended to be used in a variety of automotive
power−train applications for purposes like freewheeling, clamping,
rectification, bootstrap and snubber, etc. It’s also an ideal device for
non−automotive applications which requires a higher reliability
performance.
1
2
1.Cathode
2.Anode
Features
• Ultrafast and Soft Recovery
• Low Forward Voltage (V = 1.56 V (Typ.) @ I = 80 A)
F
F
• High Speed Switching (t = 242 ns (Typ.) @ I = 80 A)
rr
F
• Avalanche Energy Rated
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
TO−247−2LD
CASE 340CL
Applications
• EV and HEV On−Board Charger
• Stationary Charger
MARKING DIAGRAM
• Other Automotive Applications
• General Power Supply Requiring Higher Reliability
$Y&Z&3&K
RURG80100
RURG80100
= Specific Device Code
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
$Y
&Z
&3
&K
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
March, 2020 − Rev. 3
RURG80100−F085/D
RURG80100−F085
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
Units
V
Peak Repetitive Reverse Voltage
1000
V
RRM
RWM
V
Working Peak Reverse Voltage
DC Blocking Voltage
1000
1000
V
V
V
R
Average Rectified Forward Current @ T = 25_C
I
80
A
C
F(AV)
I
Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz)
240
50
A
FSM
E
Avalanche Energy (1.6 A, 40 mH)
mJ
°C
AVL
T , T
J
Operating Junction and Storage Temperature
−55 to +175
STG
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Max.
0.3
Units
°C/W
°C/W
RθJC
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
RθJA
45
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Pacing Type
Qty per Tube
RURG80100
RURG80100−F085
TO−247
−
30
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
Typ.
−
Max
250
1.5
Units
TC = 25°C
I
R
Instantaneous Reverse Current
V
R
= 1000 V
−
−
mA
TC = 175°C
−
mA
V
Instantaneous Forward Voltage
Reverse Recovery Time
TC = 25°C
TC = 175°C
−
−
1.56
1.35
2.0
1.7
V
V
I = 80 A
FM
F
(Note 1)
t
rr
I =1 A, di/dt = 100 A/μs,
TC = 25°C
−
122
158
ns
F
CC
(Note 2)
V
= 650 V
I = 80 A, di/dt = 100 A/μs,
CC
TC = 25°C
TC = 175°C
−
−
ns
ns
242
979
314
−
F
V
= 650 V
t
Reverse Recovery Time
I = 80 A,
−
−
−
74
168
751
−
−
−
ns
ns
nC
TC = 25°C
a
F
di/dt = 100 A/ms,
t
b
V
CC
= 650 V
Q
Reverse Recovery Charge
rr
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%.
2. Guaranteed by design.
www.onsemi.com
2
RURG80100−F085
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
t CONTROL I
2 F
G
F
L
t
1 AND
dI
F
t
rr
I
F
dt
t
t
b
a
DUT
CURRENT
SENSE
0
R
G
+
V
−
V
0.25 I
RM
DD
GE
IGBT
t
1
I
RM
t
2
t Test Circuit
rr
t Waveforms and Definitions
rr
Avalanche Energy Test Circuit
Avalanche Current and Voltage Waveforms
Figure 1. Test Circuit and Waveforms
www.onsemi.com
3
RURG80100−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
300
100
T
= 175°C
C
100
10
T
= 125°C
C
T
= 175°C
C
10
1
1
0.1
T
= 125°C
C
T
= 25°C
C
0.01
1E−3
1E−4
T
= 25°C
C
0.1
0.1
0.5
1.0
1.5
2.0
2.5
200
400
600
800
1000
Forward Voltage, V [V]
Reverse Voltage, V [V]
F
R
Figure 2. Typical Forward Voltage Drop
vs. Forward Current
Figure 3. Typical Reverse Current vs.
Reverse Voltage
1200
1000
800
10000
I
F
= 80 A
Typical Capacitance
at 10 V = 239 pF
1000
100
10
T
= 175°C
C
600
T
= 125°C
C
400
T
= 25°C
C
200
100
200
300
di/dt [A/ms]
400
500
0.1
1
10
100
1000
Reverse Voltage, V [V]
R
Figure 5. Typical Reverse Recovery Time
vs. di/dt
Figure 4. Typical Junction Capacitance
300
70
60
50
40
30
20
10
0
I
= 80 A
F
250
200
150
100
50
T
= 175°C
C
T
= 125°C
C
T
= 25°C
C
0
25
50
75
100
125
150
175
100
200
300
di/dt [A/ms]
400
500
Case temperature, T [°C]
C
Figure 6. Typical Reverse Recovery
Current vs. di/dt
Figure 7. Forward Current Derating Curve
www.onsemi.com
4
RURG80100−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
15000
I
F
= 80 A
T
= 175°C
C
12000
9000
6000
3000
0
T
= 125°C
C
T
= 25°C
C
100
200
300
di/dt [A/ms]
400
500
Figure 8. Reverse Recovery Charge
1
D=0.5
0.2
0.1
PDM
t1
0.1
t2
0.05
0.02
* Notes :
0.01
1. Z
= 0.2°C/W Typ.
thJC(t)
0.01
single pulse
2. Duty Factor, D = t /t
1
2
3. T − T = P
× Z
thJC(t)
JM
C
DM
0.001
10−5
10−4
10−3
10−2
10−1
100
101
102
t , Square Wave Pulse Duration [s]
1
Figure 9. Transient Thermal Response Curve
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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