RURG8060-F085 [ONSEMI]
600V,80A,1.34V,TO-247(2 引线)Ultrafast 整流器;型号: | RURG8060-F085 |
厂家: | ONSEMI |
描述: | 600V,80A,1.34V,TO-247(2 引线)Ultrafast 整流器 |
文件: | 总7页 (文件大小:2227K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Ultrafast Rectifier
80 A, 600 V
RURG8060-F085
CATHODE
ANODE
Description
TO−247−2L
340CL
The RURG8060−F085 is an ultrafast diode with soft recovery
characteristics (trr < 90ns). It has low forward voltage drop and is
of silicon nitride passivated ionimplanted epitaxial planar
construction.
This device is intended for use as a freewheeling/ clamping diode
and rectifier in a variety of switching power supplies and other power
switching applications. Its low stored charge and ultrafast recovery
with soft recovery characteristic minimize ringing and electrical noise
in many power switching circuits, thus reducing power loss in
the switching transistors.
MARKING DIAGRAM
$Y&Z&3&K
RURG8060
Features
• High Speed Switching ( t = 74 ns (Typ.) @ I = 80 A )
rr
F
• Low Forward Voltage( V = 1.34 V (Typ.) @ I = 80 A )
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified
• This Device is Pb−Free
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Applications
• Automotive DCDC converter
• Automotive On Board Charger
• Switching Power Supply
RURG8060
= Specific Device Code
• Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
1. Cathode
2. Anode
Rating
Symbol
Value
600
600
600
80
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
V
V
V
R
V
Average Rectified Forward Current
I
A
F(AV)
(T = 25 °C)
C
Non−repetitive Peak Surge Current
I
240
50
A
FSM
(Halfwave 1 Phase 50 Hz)
Avalanche Energy
(1.6 A, 40 mH)
E
mJ
°C
AVL
Operating Junction and Storage
Temperature
T
T
−55 to
+175
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2022 − Rev. 6
RURG8060−F085/D
RURG8060−F085
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Max
0.18
50
Units
°C/W
°C/W
R
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
q
JC
R
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tube
Quantity
RURG8060
RURG8060−F085
TO−247
−
30
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
−
Max.
250
2
Unit
uA
mA
V
I
R
Instantaneous Reverse Current
V
= 600 V
T
C
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
= 175°C
−
−
−
R
−
V
FM
Instantaneous Forward Voltage
Reverse Recovery Time
I = 80 A
F
1.34
1.6
(Note 1)
−
−
1.17
46
1.4
75
V
I = 1 A,
F
T
C
= 25°C
t
rr
ns
di/dt = 100 A/ms,
(Note 2)
V
CC
= 390 V
I = 80 A,
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
F
−
74
90
ns
ns
di/dt = 100 A/ms,
V
CC
= 390 V
−
−
290
−
ta
tb
rr
Reverse Recovery Time
I = 80 A,
38
36
130
−
−
−
ns
ns
nC
F
di/dt = 100 A/ms,
Q
Reverse Recovery Charge
Avalanche Energy
V
CC
= 390 V
E
AVL
I
AV
= 1.6 A, L = 40 mH
50
−
−
mJ
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
RURG8060−F085
TEST CIRCUITS AND WAVEFORMS
V
GE
AMPLITUDE AND
R
CONTROL dl /dt
G
F
L
t AND t CONTROL I
1
2
F
DUT
CURRENT
SENSE
dI
F
T
rr
R
G
I
F
dt
t
t
b
+
a
V
GE
0
V
−
DD
IGBT
t
1
0.25I
RM
t
2
I
RM
Figure 1. Trr Test Circuit
Figure 2. Trr Waveforms and Definitions
I = 1.6 A
L = 40 mH
R < 0.1 W
2
E
AVL
= 1/2LI [V
/(V −V )]
R(AVL) R(AVL) DD
Q = IGBT (BV
> DUT V
)
V
AVL
1
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
t
2
t
0
1
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Waveforms
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3
RURG8060−F085
TYPICAL PERFORMANCE CHARECTERISTICS
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 5. Typical Forward Voltage Drop
vs. Forward Current
Figure 6. Typical Reverse
Current vs. Reverse Voltage
V , Reverse Voltage (V)
R
di/dt (A/ms)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse Recovery Time vs. di/dt
T , Case Temperature (5C)
C
di/dt (A/ms)
Figure 9. Typical Reverse Recovery Current vs. di/dt
Figure 10. Forward Current Derating Curve
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4
RURG8060−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
di/dt, (A/ms)
Figure 11. Reverse Recovery Charge
t , Square Wave Pulse Duration (s)
1
Figure 12. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2018
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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