RURG8060-F085 [ONSEMI]

600V,80A,1.34V,TO-247(2 引线)Ultrafast 整流器;
RURG8060-F085
型号: RURG8060-F085
厂家: ONSEMI    ONSEMI
描述:

600V,80A,1.34V,TO-247(2 引线)Ultrafast 整流器

文件: 总7页 (文件大小:2227K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Ultrafast Rectifier  
80 A, 600 V  
RURG8060-F085  
CATHODE  
ANODE  
Description  
TO2472L  
340CL  
The RURG8060F085 is an ultrafast diode with soft recovery  
characteristics (trr < 90ns). It has low forward voltage drop and is  
of silicon nitride passivated ionimplanted epitaxial planar  
construction.  
This device is intended for use as a freewheeling/ clamping diode  
and rectifier in a variety of switching power supplies and other power  
switching applications. Its low stored charge and ultrafast recovery  
with soft recovery characteristic minimize ringing and electrical noise  
in many power switching circuits, thus reducing power loss in  
the switching transistors.  
MARKING DIAGRAM  
$Y&Z&3&K  
RURG8060  
Features  
High Speed Switching ( t = 74 ns (Typ.) @ I = 80 A )  
rr  
F
Low Forward Voltage( V = 1.34 V (Typ.) @ I = 80 A )  
F
F
Avalanche Energy Rated  
AECQ101 Qualified  
This Device is PbFree  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
Applications  
Automotive DCDC converter  
Automotive On Board Charger  
Switching Power Supply  
RURG8060  
= Specific Device Code  
Power Switching Circuits  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
1. Cathode  
2. Anode  
Rating  
Symbol  
Value  
600  
600  
600  
80  
Unit  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RRM  
RWM  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
V
V
V
R
V
Average Rectified Forward Current  
I
A
F(AV)  
(T = 25 °C)  
C
Nonrepetitive Peak Surge Current  
I
240  
50  
A
FSM  
(Halfwave 1 Phase 50 Hz)  
Avalanche Energy  
(1.6 A, 40 mH)  
E
mJ  
°C  
AVL  
Operating Junction and Storage  
Temperature  
T
T
55 to  
+175  
J, STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
March, 2022 Rev. 6  
RURG8060F085/D  
RURG8060F085  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Max  
0.18  
50  
Units  
°C/W  
°C/W  
R
Maximum Thermal Resistance, Junction to Case  
Maximum Thermal Resistance, Junction to Ambient  
q
JC  
R
q
JA  
PACKAGE MARKING AND ORDERING INFORMATION  
Device Marking  
Device  
Package  
Tube  
Quantity  
RURG8060  
RURG8060F085  
TO247  
30  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
250  
2
Unit  
uA  
mA  
V
I
R
Instantaneous Reverse Current  
V
= 600 V  
T
C
T
C
T
C
T
C
= 25°C  
= 175°C  
= 25°C  
= 175°C  
R
V
FM  
Instantaneous Forward Voltage  
Reverse Recovery Time  
I = 80 A  
F
1.34  
1.6  
(Note 1)  
1.17  
46  
1.4  
75  
V
I = 1 A,  
F
T
C
= 25°C  
t
rr  
ns  
di/dt = 100 A/ms,  
(Note 2)  
V
CC  
= 390 V  
I = 80 A,  
T
C
T
C
T
C
= 25°C  
= 175°C  
= 25°C  
F
74  
90  
ns  
ns  
di/dt = 100 A/ms,  
V
CC  
= 390 V  
290  
ta  
tb  
rr  
Reverse Recovery Time  
I = 80 A,  
38  
36  
130  
ns  
ns  
nC  
F
di/dt = 100 A/ms,  
Q
Reverse Recovery Charge  
Avalanche Energy  
V
CC  
= 390 V  
E
AVL  
I
AV  
= 1.6 A, L = 40 mH  
50  
mJ  
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%  
2. Guaranteed by design  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
2
 
RURG8060F085  
TEST CIRCUITS AND WAVEFORMS  
V
GE  
AMPLITUDE AND  
R
CONTROL dl /dt  
G
F
L
t AND t CONTROL I  
1
2
F
DUT  
CURRENT  
SENSE  
dI  
F
T
rr  
R
G
I
F
dt  
t
t
b
+
a
V
GE  
0
V
DD  
IGBT  
t
1
0.25I  
RM  
t
2
I
RM  
Figure 1. Trr Test Circuit  
Figure 2. Trr Waveforms and Definitions  
I = 1.6 A  
L = 40 mH  
R < 0.1 W  
2
E
AVL  
= 1/2LI [V  
/(V V )]  
R(AVL) R(AVL) DD  
Q = IGBT (BV  
> DUT V  
)
V
AVL  
1
CES  
R(AVL)  
L
R
+
V
CURRENT  
SENSE  
I
L
I
L
DD  
I V  
Q
1
V
DD  
DUT  
t
t
t
2
t
0
1
Figure 3. Avalanche Energy Test Circuit  
Figure 4. Avalanche Current and Voltage Waveforms  
www.onsemi.com  
3
RURG8060F085  
TYPICAL PERFORMANCE CHARECTERISTICS  
V , Forward Voltage (V)  
F
V , Reverse Voltage (V)  
R
Figure 5. Typical Forward Voltage Drop  
vs. Forward Current  
Figure 6. Typical Reverse  
Current vs. Reverse Voltage  
V , Reverse Voltage (V)  
R
di/dt (A/ms)  
Figure 7. Typical Junction Capacitance  
Figure 8. Typical Reverse Recovery Time vs. di/dt  
T , Case Temperature (5C)  
C
di/dt (A/ms)  
Figure 9. Typical Reverse Recovery Current vs. di/dt  
Figure 10. Forward Current Derating Curve  
www.onsemi.com  
4
RURG8060F085  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
di/dt, (A/ms)  
Figure 11. Reverse Recovery Charge  
t , Square Wave Pulse Duration (s)  
1
Figure 12. Transient Thermal Response Curve  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO2472LD  
CASE 340CL  
ISSUE A  
DATE 03 DEC 2019  
GENERIC  
MARKING DIAGRAM*  
AYWWZZ  
XXXXXXX  
XXXXXXX  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
ZZ  
= Assembly Lot Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13850G  
TO2472LD  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
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