RURG8060 [ONSEMI]

80A,600V,超快二极管;
RURG8060
型号: RURG8060
厂家: ONSEMI    ONSEMI
描述:

80A,600V,超快二极管

超快软恢复二极管 快速软恢复二极管 局域网
文件: 总6页 (文件大小:275K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ultrafast Diode  
80 A, 600 V  
RURG8060  
Description  
The RURG8060 is an ultrafast diode with low forward voltage drop.  
This device is intended for use as freewheeling and clamping diodes in  
a variety of switching power supplies and other power switching  
applications. It is specially suited for use in switching power supplies  
and industrial application.  
www.onsemi.com  
Features  
Ultrafast Recovery, t = 85 ns (@ I = 80 A )  
rr  
F
Max Forward Voltage, V = 1.6 V (@ T = 25 °C )  
F
C
CATHODE  
(BOTTOM  
SIDE METAL)  
CATHODE  
ANODE  
600 V Reverse Voltage and High Reliability  
Avalanche Energy Rated  
This Device is PbFree and is RoHS Compliant  
Applications  
JEDEC STYLE 2 LEAD TO247  
340CL  
Switching Power Supplies  
Power Switching Circuits  
General Purpose  
MARKING DIAGRAM  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
$Y&Z&3&K  
RURG8060  
Rating  
Symbol  
Value  
600  
600  
600  
80  
Unit  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RRM  
RWM  
V
V
V
R
V
Average Rectified Forward Current  
I
A
F(AV)  
(T = 72 °C)  
C
Repetitive Peak Surge Current  
(Square Wave, 20 kHz)  
I
160  
800  
A
A
FRM  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
Nonrepetitive Peak Surge Current  
(Halfwave 1 Phase, 60 Hz)  
I
FSM  
Maximum Power Dissipation  
P
D
180  
50  
W
RURG80100  
= Specific Device Code  
Avalanche Energy  
(See Figure 7 and Figure 8)  
E
mJ  
AVL  
Operating and Storage Temperature  
T
STG,  
T
J
65 to  
+175  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Cathode  
2. Anode  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
October, 2020 Rev. 4  
RURG8060/D  
RURG8060  
PACKAGE MARKING AND ORDERING INFORMATION  
Part Number  
Package  
Brand  
RURG8060  
TO2472L  
RURG8060  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Symbol  
Parameter  
Test Conditions  
I = 80 A  
Min  
Typ  
Max  
1.6  
Unit  
V
V
F
Instantaneous Forward Voltage  
(Pulse Width = 300 ms, Duty Cycle = 2%)  
F
I = 80 A,  
1.4  
V
F
C
T
= 150°C  
I
R
Instantaneous Reverse Current  
V
V
= 600 V  
250  
2.0  
mA  
R
= 600 V  
= 150°C  
mA  
R
C
T
t
Reverse Recovery Time (See Figure 6 )  
Summation of t + t  
I = 1 A,  
F
75  
85  
ns  
ns  
ns  
ns  
rr  
F
dl /dt = 100 A/ms  
a
b
I = 80 A,  
F
dI /dt = 100 A/ms  
F
t
t
Time to Reach Peak Reverse Current (See Figure 6)  
Time from Peak I to Projected Zero Crossing of I  
I = 80 A,  
40  
25  
a
F
dI /dt = 100 A/ms  
F
I = 80 A,  
b
RM  
RM  
F
Based on a Straight Line from Peak I  
Through 25%  
dI /dt = 100 A/ms  
RM  
F
of I  
(See Figure 6)  
RM  
R
Thermal Resistance Junction to Case  
0.83  
°C/W  
q
JC  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
2
RURG8060  
TYPICAL PERFORMANCE CURVES  
400  
100  
1000  
o
175 C  
o
175 C  
100  
10  
o
100 C  
o
100 C  
1
10  
1
o
25 C  
0.1  
0.01  
o
25 C  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
100  
200  
300  
400  
500  
600  
V , Forward Voltage (V)  
F
V , Reverse Voltage (V)  
R
Figure 1. Forward Current vs. Forward Voltage  
Figure 2. Reverse Current vs. Reverse Voltage  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
DC  
t
rr  
SQ. WAVE  
t
a
t
b
25  
50  
75  
100  
125  
150  
175  
1
10  
80  
I , Forward Current (A)  
F
T , Case Temperature (5C)  
C
Figure 3. trr, ta and tb Curves vs. Forward Current  
Figure 4. Current Derating Curve  
www.onsemi.com  
3
RURG8060  
TEST CIRCUITS AND WAVEFORMS  
V
GE  
AMPLITUDE AND  
R
CONTROL dl /dt  
G
F
L
t AND t CONTROL I  
1
2
F
DUT  
CURRENT  
SENSE  
dI  
F
T
rr  
R
G
I
F
dt  
t
t
b
+
a
V
GE  
0
V
DD  
IGBT  
t
1
0.25I  
RM  
t
2
I
RM  
Figure 5. Trr Test Circuit  
Figure 6. Trr Waveforms and Definitions  
I = 1.6 A  
L = 40 mH  
R < 0.1 W  
2
E
AVL  
= 1/2LI [V  
/(V V )]  
R(AVL) R(AVL) DD  
Q = IGBT (BV  
> DUT V  
)
V
AVL  
1
CES  
R(AVL)  
L
R
+
V
CURRENT  
SENSE  
I
L
I
L
DD  
I V  
Q
1
V
DD  
DUT  
t
t
t
2
t
0
1
Figure 7. Avalanche Energy Test Circuit  
Figure 8. Avalanche Current and Voltage Waveforms  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO2472LD  
CASE 340CL  
ISSUE A  
DATE 03 DEC 2019  
GENERIC  
MARKING DIAGRAM*  
AYWWZZ  
XXXXXXX  
XXXXXXX  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
ZZ  
= Assembly Lot Code  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13850G  
TO2472LD  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

相关型号:

RURG8060-F085

600V,80A,1.34V,TO-247(2 引线)Ultrafast 整流器
ONSEMI

RURG8060_F085

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 80A, 600V V(RRM), Silicon, TO-247AB, 3/2 PIN
FAIRCHILD

RURG8070

80A, 700V, SILICON, RECTIFIER DIODE
ROCHESTER

RURG8080

80A, 800V, SILICON, RECTIFIER DIODE
ROCHESTER

RURH15100CC

15A, 1000V Ultrafast Dual Diode
INTERSIL

RURH1510CC

15A, 100V - 200V Ultrafast Dual Diodes
HARRIS

RURH1515CC

15A, 100V - 200V Ultrafast Dual Diodes
HARRIS

RURH1520CC

15A, 200V Ultrafast Dual Diodes
INTERSIL

RURH1520CC

15A, 100V - 200V Ultrafast Dual Diodes
HARRIS

RURH1540C

15A, 400V - 600V Ultrafast Dual Diodes
INTERSIL

RURH1540CC

15A, 400V - 600V Ultrafast Dual Diodes
INTERSIL