S3JB [ONSEMI]

3 A、600 V 表面贴装整流器;
S3JB
型号: S3JB
厂家: ONSEMI    ONSEMI
描述:

3 A、600 V 表面贴装整流器

二极管
文件: 总5页 (文件大小:150K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
1
2
Rectifiers, Surface Mount,  
3ꢀA, 50 V-1000 V  
Cathode  
Anode  
MARKING  
DIAGRAM  
S3AB-S3MB  
ZYWW  
S3xB  
Features  
SMB  
CASE 403AF  
Glass Passivated Chip Junction  
High Surge Current Capacity  
Low Forward Voltage: 1.15 V Maximum  
UL Flammability 94V0 Classification  
MSL 1 per JSTD020  
Polarity  
Mark  
Z
Y
WW  
S3xB  
= Assembly Plant Code  
= Year  
= Work Week  
= Specific Device Code  
x = A, B, D, G, J, K, M  
RoHS Compliant / Green Molding Compound  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These are PbFree and Halide Free Devices  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 3  
of this data sheet.  
ABSOLUTE MAXIMUM RATINGS Values are at T = 25°C unless otherwise noted.  
A
Value  
S3AB S3BB S3DB S3GB S3JB S3KB S3MB  
Symbol  
Parameter  
Repetitive Peak Reverse Voltage  
RMS Reverse Voltage  
Unit  
V
V
RRM  
V
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
3
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
R
DC Blocking Voltage  
100  
1000  
A
I
Average Forward Rectified Current  
A
F(AV)  
I
Peak Forward Surge Current: 8.3 ms Single  
Half SineWave Superimposed on Rated Load  
80  
A
FSM  
T
Operating Junction Temperature Range  
Storage Temperature Range  
55 to 150  
55 to 150  
°C  
°C  
J
T
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted. (Note 1)  
A
Symbol  
Parameter  
Typical Thermal Resistance, JunctiontoAmbient  
Typical Thermal Characteristics, JunctiontoLead  
Value  
148  
14  
Unit  
°C/W  
°C/W  
R
q
JA  
Y
JL  
1. Device mounted on FR4 PCB, board size = 76.2 mm x 114.3 mm per JESD513.  
ELECTRICAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
1.15  
10  
Unit  
V
V
F
Instantaneous Forward Voltage (Note 2)  
I = 3 A  
F
I
R
Reverse Current at Rated V  
T = 25°C  
mA  
R
J
T = 125°C  
250  
J
t
Reverse Recovery Time  
Junction Capacitance  
I = 0.5 A, I = 1 A, I = 0.25 A  
F
1.5  
40  
ms  
rr  
R
rr  
C
V
R
= 4 V, f = 1 MHz  
pF  
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Pulse test with PW = 300 ms, 1% duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
June, 2023 Rev. 4  
S3MB/D  
 
S3ABS3MB  
TYPICAL PERFORMANCE CHARACTERISTICS  
3.5  
3
100  
10  
1
T = 125°C  
J
2.5  
2
1.5  
1
0.5  
0
T = 25°C  
J
Resistive or inductive load  
20 40 60 80  
0.1  
0
100 120  
140 160  
0
20  
40  
60  
80  
100  
120  
140  
Lead Temperature (5C)  
Figure 1. Forward Current Derating Curve  
Percent of Rated Peak Reverse Voltage (%)  
Figure 2. Typical Reverse Characteristics  
100  
100  
10  
1
8.3 ms Single Half Sine Wave  
Pulse Width = 300 ms  
1% Duty Cycle  
0.1  
10  
1.6  
1
10  
100  
0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3 1.4 1.5  
Number of Cycles at 60 Hz  
Forward Voltage (V)  
Figure 3. Maximum NonRepetitive Forward  
Figure 4. Typical Forward Characteristics  
Surge Current  
100  
10  
f = 1.0 MHz  
V
sig  
= 50 mV  
pp  
1
1
10  
Reverse Voltage (V)  
100  
Figure 5. Typical Junction Capacitance  
www.onsemi.com  
2
S3ABS3MB  
TEST CIRCUIT DIAGRAM  
W
W
100  
50  
Noninductive  
Noninductive  
t
rr  
+0.5 A  
()  
DUT  
(+)  
Pulse  
0
50 Vdc  
(approx)  
()  
Generator  
(Note 4)  
0.25 A  
W
1
Oscilloscope  
(Note 3)  
(+)  
Non  
Inductive  
1.0 A  
Figure 6. Reverse Recovery Time  
Characteristic and Test Circuit Diagram  
NOTES:  
3. Rise Time = 7 ns max. Input Impedance = 1 MW, 22 pF  
4. Rise Time = 10 ns max. Source Impedance = 50 W, 22 pF  
ORDERING INFORMATION  
Part Number  
S3AB, NRVS3AB*  
Device Code Marking  
Package  
Shipping  
S3AB  
S3BB  
S3DB  
S3GB  
S3JB  
S3KB  
S3MB  
SMB  
3000 / Tape & Reel  
(PbFree, HalideFree)  
S3BB, NRVS3BB*  
S3DB, NRVS3DB*  
S3GB, NRVS3GB*  
S3JB, NRVS3JB*  
S3KB, NRVS3KB*  
S3MB, NRVS3MB*  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP  
Capable  
www.onsemi.com  
3
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SMB  
CASE 403AF  
ISSUE O  
DATE 31 AUG 2016  
5.60  
5.08  
M
B
B
0.13  
C B A  
2.50  
3.95  
3.30  
2.20  
1.91  
B
2.20  
4.70  
4.75  
4.05  
B
LAND PATTERN RECOMMENDATION  
A
8°  
0°  
2.65 MAX  
A
R0.15 4X  
GAUGE  
PLANE  
2.45  
1.90  
0.45  
0.41  
0.15  
0.30  
0.05  
0.203  
0.050  
8°  
0  
B
C
2.15  
1.65  
1.60  
0.75  
M
0.13  
C B A  
DETAIL A  
SCALE 20 : 1  
NOTES:  
A. EXCEPT WHERE NOTED CONFORMS TO  
JEDEC DO214 VARIATION AA.  
B
DOES NOT COMPLY JEDEC STD. VALUE.  
C. ALL DIMENSIONS ARE IN MILLIMETERS.  
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR PROTRUSIONS.  
E. DIMENSION AND TOLERANCE AS PER ASME  
Y14.51994.  
F. LAND PATTERN STD. DIOM5336X240M.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13441G  
SMB  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
For additional information, please contact your local Sales Representative at  
www.onsemi.com/support/sales  

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