SBAS16XV2T5G [ONSEMI]
Switching Diode;
| 型号： | SBAS16XV2T5G |
| 厂家： | 
ONSEMI |
| 描述： | Switching Diode 测试 光电二极管 整流二极管 |
| 文件： | 总4页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16XV2T1,
BAS16XV2T5,
SBAS16XV2T1G
Switching Diode
Features
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• High−Speed Switching Applications
• Lead Finish: 100% Matte Sn (Tin)
• Qualified Reflow Temperature: 260°C
• Extremely Small SOD−523 Package
1
2
CATHODE
ANODE
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• Pb−Free Packages are Available
2
MARKING
DIAGRAM
1
SOD−523
CASE 502
PLASTIC
A6 MG
MAXIMUM RATINGS
G
1
2
Rating
Symbol
Value
75
Unit
V
A6 = Specific Device Code
Continuous Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
V
R
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
I
F
200
500
500
mA
mA
mA
A
I
FM(surge)
I
FRM
ORDERING INFORMATION
I
FSM
(Square Wave, T = 25°C prior to surge)
J
Device
Package
Shipping†
t = 1 ms
t = 1 ms
t = 1 s
4.0
1.0
0.5
BAS16XV2T1
SOD−523 3000 / Tape & Reel
BAS16XV2T1G
SOD−523 3000 / Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BAS16XV2T5G
SOD−523 8000 / Tape & Reel
(Pb−Free)
SBAS16XV2T1G SOD−523 3000 /T ape & Reel
(Pb−Free)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Total Device Dissipation, (Note 1)
P
D
200
mW
T = 25°C
A
Derate above 25°C
1.57
635
mW/°C
°C/W
°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR-5 Minimum Pad.
R
θ
JA
T , T
−55 to 150
J
stg
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2011 − Rev. 6
BAS16XV2T1/D
BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
I
R
mA
(V = 75 V)
−
−
−
1.0
50
30
R
(V = 75 V, T = 150°C)
R
J
(V = 25 V, T = 150°C)
R
J
Reverse Breakdown Voltage
V
(BR)
75
−
V
(I = 100 mA)
BR
Forward Voltage
V
F
mV
(I = 1.0 mA)
−
−
−
−
715
855
1000
1250
F
(I = 10 mA)
F
(I = 50 mA)
F
(I = 150 mA)
F
Diode Capacitance (V = 0, f = 1.0 MHz)
C
−
−
2.0
pF
V
R
D
Forward Recovery Voltage
V
FR
1.75
(I = 10 mA, t = 20 ns)
F
r
Reverse Recovery Time
(I = I = 10 mA, R = 50 Ω)
t
−
−
6.0
45
ns
rr
F
R
L
Stored Charge
(I = 10mA to V = 5.0V, R = 500 Ω)
Q
pC
S
F
R
L
820 Ω
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 μF
I
F
t
rr
t
100 μH
0.1 μF
10%
90%
D.U.T.
i
= 1.0 mA
R(REC)
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 10 mA; MEASURED
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G
10
100
10
T = 150°C
A
T = 85°C
A
T = 125°C
A
1.0
T = -ꢀ40°C
A
T = 85°C
A
0.1
T = 55°C
1.0
0.1
A
T = 25°C
A
0.01
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
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3
BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE E
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
E
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
1
2
2X b
MILLIMETERS
M
0.08
X Y
DIM
A
b
c
D
E
HE
L
MIN
0.50
0.25
0.07
1.10
0.70
1.50
NOM
0.60
0.30
0.14
1.20
0.80
1.60
0.30 REF
0.20
MAX
0.70
0.35
0.20
1.30
0.90
1.70
TOP VIEW
A
L2
0.15
0.25
c
HE
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
1.80
2X
0.48
2X
L
2X
0.40
PACKAGE
OUTLINE
2X
L2
DIMENSION: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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BAS16XV2T1/D
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