SBAS21DW5T3G [ONSEMI]
250 V Switching Diode;
| 型号： | SBAS21DW5T3G |
| 厂家： | 
ONSEMI |
| 描述： | 250 V Switching Diode 光电二极管 整流二极管 |
| 文件： | 总6页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS19LT1, BAS20LT1,
BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage
Switching Diode
Device Marking:
http://onsemi.com
• BAS19LT1 = JP
• BAS20LT1 = JR
• BAS21LT1 = JS
• BAS21DW5T1 = JS
HIGH VOLTAGE
SWITCHING DIODE
SOT−23
Features
3
1
• Pb−Free Packages are Available
CATHODE
ANODE
SC−88A
5
1
MAXIMUM RATINGS
CATHODE
ANODE
Rating
Symbol Value
Unit
4
3
Continuous Reverse Voltage
V
R
Vdc
CATHODE
ANODE
120
200
250
BAS19
BAS20
BAS21
MARKING DIAGRAMS
Repetitive Peak Reverse Voltage
V
Vdc
RRM
Jx M
120
200
250
BAS19
BAS20
BAS21
SOT−23 (TO−236)
CASE 318
Jx = Specific Device Code
x = P, R or S
M = Date Code
STYLE 8
Continuous Forward Current
Peak Forward Surge Current
Maximum Junction Temperature
Power Dissipation (Note 4)
I
F
200
625
150
385
mAdc
mAdc
°C
I
FM(surge)
T
Jmax
P
mW
D
d
XX
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SC−88A (SOT−353)
CASE 419A
XX= Specific Device Code
d
= Date Code
1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
April, 2005 − Rev. 7
BAS19LT1/D
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
THERMAL CHARACTERISTICS (SOT−23)
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 2)
P
D
225
mW
T = 25°C
Derate above 25°C
A
1.8
mW/°C
Thermal Resistance
R
q
JA
556
300
°C/W
Junction−to−Ambient (SOT−23)
Total Device Dissipation Alumina Substrate
(Note 3)
P
D
mW
T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance Junction−to−Ambient
R
417
q
JA
Junction and Storage
Temperature Range
T , T
J
stg
−55 to +150
°C
THERMAL CHARACTERISTICS (SC−88A)
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 4)
P
D
385
mW
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
R
q
JA
328
3.0
°C/W
mW/°C
Maximum Junction Temperature
T
150
°C
°C
Jmax
Operating Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
m
A
d
c
(V = 100 Vdc)
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
R
(V = 150 Vdc)
R
(V = 200 Vdc)
R
(V = 100 Vdc, T = 150°C)
R
J
(V = 150 Vdc, T = 150°C)
R
J
(V = 200 Vdc, T = 150°C)
R
J
Reverse Breakdown Voltage
(I = 100 m Adc)
V
Vdc
Vdc
(BR)
BAS19
BAS20
BAS21
120
200
250
−
−
−
BR
(I = 100 m Adc)
BR
(I = 100 m Adc)
BR
Forward Voltage
V
C
F
(I = 100 mAdc)
−
−
1.0
1.25
F
(I = 200 mAdc)
F
Diode Capacitance (V = 0, f = 1.0 MHz)
−
−
5.0
50
pF
ns
R
D
Reverse Recovery Time (I = I = 30 mAdc, I
= 3.0 mAdc, R = 100)
t
rr
F
R
R(REC)
L
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2
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
820
W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 m F
I
F
t
t
100 m H
rr
10%
90%
0.1 m F
D.U.T.
I
= 3.0 mA
R(REC)
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
I
R
SAMPLING
OSCILLOSCOPE
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 30 mA; MEASURED
F
R
at I
= 3.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 30 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 30 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
7000
6000
1200
T = −55°C
A
T = 155°C
A
5000
4000
3000
1000
800
600
400
25°C
155°C
6
5
4
3
2
1
0
T = 25°C
A
200
1
T = −55°C
A
1
2
5
10
20
50
100 200 300
1
10
100
1000
FORWARD CURRENT (mA)
REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
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3
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
ORDERING INFORMATION
†
Device
Package
Shipping
BAS19LT1
SOT−23
3000 Tape/Reel
10000 Tape/Reel
3000 Tape/Reel
3000 Tape/Reel
10000 Tape/Reel
3000 Tape/Reel
BAS19LT1G
SOT−23
(Pb−Free)
BAS19LT3
SOT−23
BAS19LT3G
SOT−23
(Pb−Free)
BAS20LT1
SOT−23
BAS20LT1G
SOT−23
(Pb−Free)
BAS21LT1
SOT−23
BAS21LT1G
SOT−23
(Pb−Free)
BAS21LT3
SOT−23
BAS21LT3G
SOT−23
(Pb−Free)
BAS21DW5T1
SC−88A
BAS21DW5T1G
SC−88A
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
3
B
S
1
2
INCHES
DIM MIN MAX
MILLIMETERS
MIN
2.80
1.20
0.99
0.36
1.70
0.10
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
V
G
0.0034 0.0070 0.085
K
L
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
0.45
0.89
2.10
0.45
C
S
V
J
H
K
D
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
PACKAGE DIMENSIONS
SC−88A (SOT−353)
CASE 419A−02
ISSUE G
A
NOTES:
1. DIMENSIONING AND TOLERANCING
G
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
1
2
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
M
M
B
0.2 (0.008)
D 5 PL
0.026 BSC
0.65 BSC
−−−
0.004
0.004
0.004
0.010
0.012
−−−
0.10
0.10
0.10
0.25
0.30
N
K
N
S
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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For additional information, please contact your
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BAS19LT1/D
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