SBAT54ALT1G [ONSEMI]

Schottky Barrier Diodes;
SBAT54ALT1G
型号: SBAT54ALT1G
厂家: ONSEMI    ONSEMI
描述:

Schottky Barrier Diodes

光电二极管
文件: 总4页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT54AL  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
www.onsemi.com  
Features  
30 VOLT  
SCHOTTKY BARRIER  
DETECTOR AND SWITCHING  
DIODES  
Extremely Fast Switching Speed  
Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
F
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
SOT−23 (TO−236)  
CASE 318  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
STYLE 12  
V
R
30  
V
CATHODE  
ANODE  
1
Forward Power Dissipation  
P
F
3
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
2
Derate above 25°C  
CATHODE  
Forward Current (DC)  
I
200 Max  
mA  
mA  
F
MARKING DIAGRAM  
Non−Repetitive Peak Forward Current  
I
FSM  
t < 10 msec  
p
600  
Repetitive Peak Forward Current  
Pulse Wave = 1 sec,  
Duty Cycle = 66%  
I
mA  
FRM  
B6M G  
300  
G
1
Junction Temperature  
T
J
55 to 150  
°C  
°C  
Storage Temperature Range  
T
55 to +150  
stg  
B6  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BAT54ALT1G  
SOT−23  
3,000/Tape & Reel  
(Pb−Free)  
SBAT54ALT1G  
BAT54ALT3G  
SBAT54ALT3G  
SOT−23  
(Pb−Free)  
3,000/Tape & Reel  
10,000/Tape & Reel  
10,000/Tape & Reel  
SOT−23  
(Pb−Free)  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 1997  
1
Publication Order Number:  
October, 2016 − Rev. 14  
BAT54ALT1/D  
BAT54AL  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse Breakdown Voltage  
(I = 10 mA)  
R
V
(BR)R  
V
30  
Total Capacitance  
(V = 1.0 V, f = 1.0 MHz)  
R
C
pF  
mAdc  
V
T
7.6  
0.5  
10  
Reverse Leakage  
(V = 25 V)  
R
I
R
2.0  
Forward Voltage  
V
F
(I = 0.1 mA)  
0.22  
0.29  
0.35  
0.41  
0.52  
0.24  
0.32  
0.40  
0.50  
0.80  
F
(I = 1.0 mA)  
F
(I = 10 mA)  
F
(I = 30 mA)  
F
(I = 100 mA)  
F
Reverse Recovery Time  
t
rr  
ns  
(I = I = 10 mAdc, I = 1.0 mAdc, Figure 1)  
5.0  
F
R
R(REC)  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
820 W  
+10 V  
2 k  
0.1 mF  
I
F
t
r
t
p
T
I
F
100 mH  
0.1 mF  
t
rr  
T
10%  
90%  
DUT  
50 W OUTPUT  
50 W INPUT  
i
= 1 mA  
PULSE  
GENERATOR  
SAMPLING  
OSCILLOSCOPE  
R(REC)  
I
R
V
R
OUTPUT PULSE  
(I = I = 10 mA; measured  
INPUT SIGNAL  
F
R
at i  
= 1 mA)  
R(REC)  
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
Notes: 2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
Notes: 3. t » t  
p
rr  
Figure 1. Recovery Time Equivalent Test Circuit  
www.onsemi.com  
2
 
BAT54AL  
100  
10  
125°C  
85°C  
150°C  
1.0  
0.1  
25°C  
40°C  
55°C  
0.2  
0.3  
0.4  
0.0  
0.1  
0.5  
0.6  
V , FORWARD VOLTAGE (VOLTS)  
F
Figure 2. Forward Voltage  
1000  
100  
T = 150°C  
A
T = 125°C  
A
10  
1.0  
T = 85°C  
A
0.1  
0.01  
T = 25°C  
A
0.001  
15  
25  
30  
0
5
10  
20  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. Leakage Current  
14  
12  
10  
8
6
4
2
0
0
5
10  
15  
20  
25  
30  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Total Capacitance  
www.onsemi.com  
3
BAT54AL  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
A
H
E
T
c
A1  
SEE VIEW C  
SIDE VIEW  
STYLE 12:  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
END VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT  
3X  
2.90  
0.90  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage  
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer  
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of  
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and  
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices  
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was  
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright  
laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BAT54ALT1/D  

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