SBAT54SLT1G [ONSEMI]

Dual Series Schottky Barrier Diodes; 双肖特基势垒二极管


型号：	SBAT54SLT1G
厂家：	ONSEMI
描述：	Dual Series Schottky Barrier Diodes 双肖特基势垒二极管整流二极管测试光电二极管 PC 快速恢复二极管
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BAT54SLT1G,

SBAT54SLT1G

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

http://onsemi.com

30 VOLT

DUAL HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

Features

 Extremely Fast Switching Speed

 Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc

 AEC Qualified and PPAP Capable

 S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

SOT−23

CASE 318

STYLE 11

MAXIMUM RATINGS (T = 25C unless otherwise noted)

ANODE

CATHODE

Rating

Reverse Voltage

Symbol

Value

Unit

CATHODE/ANODE

Forward Power Dissipation

@ T = 25C

225

1.8

mW/C

MARKING DIAGRAM

Derate above 25C

Forward Current (DC)

200 Max

Non−Repetitive Peak Forward Current

LD3M G

FSM

t < 10 msec

600

1.0

Square pulse = 1 sec

Repetitive Peak Forward Current

Pulse Wave = 1 sec,

Duty Cycle = 66%

FRM

300

LD3

= Device Code

= Date Code*

= Pb−Free Package

Junction Temperature

−55 to 150

C

(Note: Microdot may be in either location)

Storage Temperature Range

stg

−55 to +150

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

BAT54SLT1G

SOT−23

3,000 / Tape & Reel

(Pb−Free)

SBAT54SLT1G

SOT−23

3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2011

Publication Order Number:

November, 2011 − Rev. 15

BAT54SLT1/D

BAT54SLT1G, SBAT54SLT1G

ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

−

Typ

−

Max

−

Unit

Reverse Breakdown Voltage

(BR)R

(I = 10 ꢀ A)

Total Capacitance

ꢀ Adc

Vdc

(V = 1.0 V, f = 1.0 MHz)

7.6

Reverse Leakage

(V = 25 V)

−

0.5

2.0

0.24

0.32

0.40

0.5

0.8

5.0

Forward Voltage

(I = 0.1 mAdc)

−

0.22

0.29

0.35

0.38

0.46

−

Forward Voltage

(I = 1.0 mAdc)

−

Forward Voltage

(I = 10 mAdc)

−

Forward Voltage

(I = 30 mAdc)

−

Forward Voltage

(I = 100 mAdc)

−

Reverse Recovery Time

(I = I = 10 mAdc, I

= 1.0 mAdc, Figure 1)

−

R(REC)

820 ꢁ

+10 V

2 k

100 ꢀ H

0.1 ꢀ F

10%

90%

DUT

50 ꢁ OUTPUT

PULSE

GENERATOR

50 ꢁ INPUT

SAMPLING

OSCILLOSCOPE

= 1 mA

R(REC)

OUTPUT PULSE

INPUT SIGNAL

(I = I = 10 mA; measured

at i

= 1 mA)

R(REC)

Notes: 1. A 2.0 kꢁ variable resistor adjusted for a Forward Current (I ) of 10 mA.

Notes: 2. Input pulse is adjusted so I

is equal to 10 mA.

R(peak)

Notes: 3. t » t

Figure 1. Recovery Time Equivalent Test Circuit

http://onsemi.com

BAT54SLT1G, SBAT54SLT1G

100

125C

85C

150C

1.0

0.1

25C

−40C

−55C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

V , FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

1000

100

T = 150C

T = 125C

1.0

T = 85C

0.1

0.01

T = 25C

0.001

V , REVERSE VOLTAGE (VOLTS)

Figure 3. Leakage Current

V , REVERSE VOLTAGE (VOLTS)

Figure 4. Total Capacitance

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BAT54SLT1G, SBAT54SLT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

SEE VIEW C

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

MILLIMETERS

INCHES

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

0.094

−−−

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

2.10

0

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

2.40

−−−

MAX

MIN

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

0.083

0

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.104

10

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

2.64

10

0.25

STYLE 11:

PIN 1. ANODE

VIEW C

2. CATHODE

3. CATHODE−ANODE

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

inches

SCALE 10:1

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

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Order Literature: http://www.onsemi.com/orderlit

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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BAT54SLT1/D

http://onsemi.com

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