SBAV199LT1G [ONSEMI]
Dual Series Switching Diode;
| 型号： | SBAV199LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Dual Series Switching Diode PC 光电二极管 |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV199L, SBAV199L
Dual Series Switching
Diode
Features
• Low Leakage Current Applications
• Medium Speed Switching Times
www.onsemi.com
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
CASE 318
SOT−23
STYLE 11
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
Vdc
ANODE
CATHODE
2
Reverse Voltage
Forward Current
V
R
1
I
215
500
70
mAdc
mAdc
Vdc
F
3
Peak Forward Surge Current
I
FM(surge)
CATHODE/ANODE
Repetitive Peak Reverse Voltage
V
RRM
MARKING DIAGRAM
Average Rectified Forward Current
(Note 1)
I
715
mAdc
F(AV)
(Averaged Over Any 20 ms Period)
Repetitive Peak Forward Current
I
450
mAdc
Adc
FRM
JY M G
Non−Repetitive Peak Forward Current
I
FSM
G
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
2.0
1.0
0.5
JY = Specific Device Code
THERMAL CHARACTERISTICS
Characteristic
M
G
= Date Code*
= Pb−Free Package
Symbol
Max
Unit
(Note: Microdot may be in either location)
Total Device Dissipation
P
D
FR−5 Board (Note 1), T = 25°C
225
1.8
mW
mW/°C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
R
556
°C/W
q
JA
ORDERING INFORMATION
P
D
Alumina Substrate (Note 2), T = 25°C
300
2.4
mW
mW/°C
A
†
Device
Package
Shipping
Derate above 25°C
BAV199LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−65 to +150
stg
SBAV199LT1G
SBAV199LT3G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 10
BAV199LT1/D
BAV199L, SBAV199L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)
Vdc
(I
(BR)
= 100 mAdc)
70
−
Reverse Voltage Leakage Current
I
R
nAdc
(V = 70 Vdc)
−
−
5.0
80
R
(V = 70 Vdc, T = 150°C)
R
J
Diode Capacitance
(V = 0 V, f = 1.0 MHz)
R
C
V
pF
D
−
2.0
Forward Voltage
mVdc
F
(I = 1.0 mAdc)
−
−
−
−
900
1000
1100
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time
t
rr
ms
(I = I = 10 mAdc) (Figure 1)
−
3.0
F
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
DUT
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
BAV199L, SBAV199L
TYPICAL CHARACTERISTICS
100
10
1,000
100
10
T = 150°C
A
−55°C
150°C 25°C
1.0
25°C
0.1
1
−55°C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
70
80
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 2. Forward Voltage
Figure 4. Leakage Current
1.2
1.0
T = 25°C
A
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
70
80
V , REVERSE VOLTAGE (V)
R
Figure 3. Capacitance
www.onsemi.com
3
BAV199L, SBAV199L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 11:
PIN 1. ANODE
END VIEW
2. CATHODE
3. CATHODE−ANODE
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
BAV199LT1/D
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