SBAW56TT1G [ONSEMI]
70 V Dual Common Anode Switching Diode;
| 型号： | SBAW56TT1G |
| 厂家： | 
ONSEMI |
| 描述： | 70 V Dual Common Anode Switching Diode 整流二极管 |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAW56TT1
Preferred Device
Dual Switching Diode
Features
• Pb−Free Package is Available
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MAXIMUM RATINGS (T = 25°C)
A
CATHODE
1
Rating
Symbol
Max
70
Unit
Vdc
3
ANODE
Reverse Voltage
Forward Current
V
R
2
CATHODE
I
200
500
mAdc
mAdc
F
Peak Forward Surge Current
I
FM(surge)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
P
D
FR−4 Board (Note 1), T = 25°C
225
1.8
mW
mW/°C
A
1
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
555
°C/W
θ
JA
CASE 463
SC−75/SOT−416
STYLE 4
Total Device Dissipation,
P
D
FR−4 Board (Note 2), T = 25°C
360
2.9
mW
mW/°C
A
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
θ
JA
345
°C/W
MARKING DIAGRAM
Junction and Storage
Temperature Range
T , T
−55 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
A1 M G
G
1
2. FR−4 @ 1.0 × 1.0 Inch Pad
A1 = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BAW56TT1
SC−75/SOT−416 3000/Tape & Reel
SC−75/SOT−416
(Pb−Free)
BAW56TT1G
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 2
BAW56TT1/D
BAW56TT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
V
70
−
Vdc
(BR)
(I
= 100 mAdc)
(BR)
Reverse Voltage Leakage Current
I
mAdc
R
(V = 25 Vdc, T = 150°C)
−
−
−
30
2.5
50
R
J
(V = 70 Vdc)
R
(V = 70 Vdc, T = 150°C)
R
J
Diode Capacitance
C
V
−
2.0
pF
D
(V = 0, f = 1.0 MHz)
R
Forward Voltage
mVdc
F
(I = 1.0 mAdc)
−
−
−
−
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 60 mAdc)
F
(I = 150 mAdc)
F
Reverse Recovery Time
t
−
6.0
ns
rr
(I = I = 10 mAdc, R = 100 W, I
= 1.0 mAdc) (Figure 1)
F
R
L
R(REC)
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
0.1 mF
rr
10%
90%
DUT
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAW56TT1
10
100
10
T
= 150°C
= 125°C
A
T
A
1.0
T
A
= 85°C
T
A
= 85°C
0.1
0.01
T
= 25°C
A
T
= 55°C
1.0
0.1
A
T
A
= −ꢀ40°C
T
A
= 25°C
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 5. Normalized Thermal Response
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3
BAW56TT1
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX MIN
0.70
A1 0.00
INCHES
NOM MAX
3
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
0.20 (0.008) E
H
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
E
C
STYLE 4:
A
PIN 1. CATHODE
2. CATHODE
3. ANODE
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAW56TT1/D
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