SBRD5H100T4G [ONSEMI]
Schottky Power Rectifier, Switch-mode, 5.0 A, 100 V;
| 型号： | SBRD5H100T4G |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Power Rectifier, Switch-mode, 5.0 A, 100 V |
| 文件： | 总5页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRD5H100T4G,
NBRD5H100T4G
SWITCHMODE
Schottky Power Rectifier
Surface Mount Power Package
http://onsemi.com
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
SCHOTTKY BARRIER
RECTIFIER
5 AMPERES, 100 VOLTS
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• NBRD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
DPAK
CASE 369C
1
4
3
• All Packages are Pb−Free*
(Pin 1: No Connect)
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 0.4 grams (approximately)
MARKING DIAGRAM
• Finish: All External Surfaces Corrosion Resistant and Terminal
YWW
B
5100G
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL1 Requirements
• ESD Ratings:
Y
= Year
WW
B5100
G
= Work Week
= Device Code
= Pb−Free Package
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
ORDERING INFORMATION
†
Device
Package
Shipping
MBRD5H100T4G
DPAK
2,500 /
(Pb−Free)
Tape & Reel
NBRD5H100T4G
DPAK
2,500 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2012 − Rev. 5
MBRD5H100/D
MBRD5H100T4G, NBRD5H100T4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
F(AV)
(Rated V ) T = 171°C
5
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 171°C
10
R
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
A
FSM
105
Operating Junction and Storage Temperature Range (Note 1)
T , T
−65 to +175
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
°C/W
R
1.6
95.8
q
JC
JA
R
q
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
V
F
V
(I = 5 A, T = 25°C)
0.71
0.60
F
J
(I = 5 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 3)
I
R
(Rated dc Voltage, T = 125°C)
4.5
3.5
mA
mA
J
(Rated dc Voltage, T = 25°C)
J
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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2
MBRD5H100T4G, NBRD5H100T4G
100
10
100
10
1
1
150°C
150°C
25°C
25°C
125°C
125°C
0.2 0.3 0.4
0.1
0.1
0.1
0.5 0.6 0.7
0.8 0.9
1.0 1.1
0.1
0.2 0.3 0.4 0.5
0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
100
10
1
150°C
125°C
1
150°C
125°C
0.1
0.01
0.001
0.1
0.01
25°C
25°C
0.0001
0.00001
0.001
0.0001
0
10
20
30
40
50
60
70
80
90 100
0
10
20
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
10
9
1200
1000
800
T = 25°C
J
f = 1 MHz
R
= 1.6 °C/W
JC
dc
q
8
7
6
5
4
3
2
Square
600
400
200
0
1
0
145
150
155
160
165
170
175
180
0
20
40
60
80
100
T , CASE TEMPERATURE (°C)
C
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Current Derating, Case
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3
MBRD5H100T4G, NBRD5H100T4G
22
20
5
4
R
= 95.8 °C/W
q
JA
18
16
14
12
10
8
Square Wave
dc
3
2
1
0
dc
Square Wave
6
4
2
0
0
20
40
60
80
100
120 140
160
180
0
5
10
15
20
T , AMBIENT TEMPERATURE (°C)
A
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Current Derating, Ambient
Figure 8. Forward Power Dissipation
100
10
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
0.1
1.0%
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (s)
0.1
1.0
10
100
1000
Figure 9. Thermal Response, Junction−to−Case
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4
MBRD5H100T4G, NBRD5H100T4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
C
A
D
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
E
c2
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
PLANE
SEATING
PLANE
L2
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
SOLDERING FOOTPRINT*
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBRD5H100/D
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