SCH1439 [ONSEMI]
3500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, SCH6, 6 PIN;
| 型号： | SCH1439 |
| 厂家： | 
ONSEMI |
| 描述： | 3500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE, SCH6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1861
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SCH1439
Features
•
ON-resistance R (on)1=55m (typ.)
4V drive
Halogen free compliance
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±20
3.5
14
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
When mounted on ceramic substrate (900mm2 0.8mm)
1
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: SCH6
7028-002
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 5,000 pcs./reel
1.6
0.2
0.2
Packing Type : TL
Marking
ZQ
6
5 4
3
2
1
TL
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
SANYO : SCH6
3
4
http://semicon.sanyo.com/en/network
No. A1861-1/4
D0810PE TKIM TC-00002531
SCH1439
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D
GS
I
V
=30V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.2
V
GS
yfs
DS D
Forward Transfer Admittance
V
=10V, I =1.5A
D
1.8
S
|
DS
R
R
R
(on)1
(on)2
(on)3
I
=1.5A, V =10V
GS
55
78
72
110
128
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=1A, V =4.5V
GS
m
m
I
D
=1A, V =4V
GS
91
Input Capacitance
Ciss
V
=10V, f=1MHz
=10V, f=1MHz
=10V, f=1MHz
280
60
pF
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
DS
pF
pF
ns
V
DS
30
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
5.8
8.0
21
d
r
ns
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
9.7
5.6
1.2
0.8
0.84
ns
Total Gate Charge
Qg
V
DS
=15V, V =10V, I =3.5A
GS
nC
nC
nC
V
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=15V, V =10V, I =3.5A
GS
D
V
DS
=15V, V =10V, I =3.5A
GS
D
V
SD
I =3.5A, V =0V
S
1.2
GS
Switching Time Test Circuit
V =15V
DD
V
IN
10V
0V
I
=1.5A
D
V
IN
R =10Ω
L
V
OUT
D
PW=10μs
D.C.≤1%
G
SCH1439
P. G
50Ω
S
I
D
-- V
I -- V
D GS
DS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5
4
3
2
1
0
V
=10V
DS
V
GS
=2.5V
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
Drain-to-Source Voltage, V
-- V
IT116015
Gate-to-Source Voltage, V
-- V
IT16134
DS
GS
No. A1861-2/4
SCH1439
R
(on) -- V
GS
R
(on) -- Ta
DS
DS
250
200
150
100
Ta=25°C
140
120
100
80
I
=1.0A
D
1.5A
60
40
50
0
20
0
0
2
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT16135
IT16136
GS
| yfs | -- I
I
-- V
D
S SD
10
7
10
7
5
V
=10V
V
=0V
DS
GS
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.01
0.1
0.01
2
3
5
7
2
3
5
7
2
3
5 7
10
IT16137
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.0
Drain Current, I -- A
D
Diode Forward Voltage, V
SD
-- V
IT16138
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
100
1000
V
V
=15V
=10V
f=1MHz
DD
GS
7
7
5
5
3
2
3
2
10
100
t (on)
d
7
5
7
5
3
2
3
2
1.0
0.1
10
2
3
5
7
2
3
5
7
0
5
10
15
20
25
30
IT16140
1.0
10
IT16139
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
D
DS
V
GS
-- Qg
A S O
100
10
9
7
V
=10V
DS
=3.5A
5
I
D
3
2 I =14A (PW≤10μs)
DP
8
10
7
5
7
I =3.5A
D
3
2
6
1.0
5
7
5
4
3
3
2
Operation in this
area is limited by R (on).
DS
0.1
7
5
2
Ta=25°C
3
2
1
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
100
IT16149
0
1
2
3
4
5
6
0.1
1.0
10
Total Gate Charge, Qg -- nC
IT16023
Drain-to-Source Voltage, V
DS
-- V
No. A1861-3/4
SCH1439
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16150
Note on usage : Since the SCH1439 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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mentioned above.
This catalog provides information as of December, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1861-4/4
相关型号：
SCH1439-TL-H
Power MOSFET, 30V, 72mΩ, 3.5A, Single N-Channel, SOT-563 / SCH6, 5000-REEL
ONSEMI
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