SFT1202(TP) [ONSEMI]
TRANSISTOR,BJT,NPN,150V V(BR)CEO,2A I(C),TO-251VAR;
| 型号： | SFT1202(TP) |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR,BJT,NPN,150V V(BR)CEO,2A I(C),TO-251VAR |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1169
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
SFT1202
High-Voltage Switching Applications
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
•
•
•
•
•
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
180
180
150
7
V
V
CES
CEO
EBO
V
V
V
V
I
C
2
A
Collector Current (Pulse)
Base Current
I
3
A
CP
I
B
400
1
mA
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
15
150
Junction Temperature
Storage Temperature
Marking : T1202
Tj
Tstg
--55 to +150
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73008EA TI IM TC-00001478 No. A1169-1/4
SFT1202
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=80V, I =0A
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
V
V
V
1
1
μA
μA
CBO
CB
EB
CE
CE
CB
E
I
=4V, I =0A
C
EBO
h
=5V, I =100mA
200
560
FE
C
Gain-Bandwidth Product
Output Capacitance
f
T
=10V, I =300mA
C
140
12
MHz
pF
mV
mV
V
Cob
=10V, f=1MHz
V
V
(sat)1
(sat)2
I
C
I
C
I
C
I
C
I
C
I
C
=1A, I =100mA
110
65
165
100
1.2
CE
CE
B
Collector-to-Emitter Saturation Voltage
=0.5A, I =50mA
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
(sat)
BE
=1A, I =100mA
0.85
B
V
=10μA, I =0A
180
180
150
7
V
(BR)CBO
E
V
=100μA, R =0Ω
BE
V
(BR)CES
(BR)CEO
(BR)EBO
V
V
=1mA, R =∞
BE
V
I =10μA, I =0A
V
E
C
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
50
1460
70
ns
ns
ns
on
Storage Time
t
stg
Fall Time
t
f
Package Dimensions
unit : mm (typ)
Package Dimensions
unit : mm (typ)
7003-003
7518-003
6.5
2.3
2.3
6.5
5.0
5.0
4
0.5
0.5
4
0.5
0.85
0.85
0.7
1.2
1
2
3
0.6
0 to 0.2
1.2
0.6
0.5
1 : Base
2 : Collector
3 : Emitter
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1
2
3
4 : Collector
2.3 2.3
SANYO : TP-FA
2.3 2.3
SANYO : TP
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
V
R
R
B
R
L
50Ω
+
+
100μF
470μF
V
BE
= --5V
V =75V
CC
I =10I = --10I =0.5A
C
B1
B2
No. A1169-2/4
SFT1202
I
-- V
I
-- V
CE
C
CE
C
2.0
1.5
1.0
2.0
1.5
1.0
10mA
0.5
0
0.5
0
I =0mA
B
I =0mA
0.4
B
0
0.1
0.2
0.3
0.5
0
1
2
3
4
5
Collector-to-Emitter Voltage, V
CE
-- V IT13542
Collector-to-Emitter Voltage, V -- V IT13543
CE
I
-- V
h
FE
-- I
C
BE
C
1000
2.5
2.0
1.5
1.0
V
CE
=5V
V
CE
=5V
7
5
C
Ta=75°
3
2
100
7
5
3
2
0.5
0
10
2
3
5
7
2
3
5
7
1.0
2
3
5
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
Collector Current, I -- A
Base-to-Emitter Voltage, V
BE
-- V
IT13544
IT13545
C
Cob -- V
CB
f
-- I
T
C
3
2
7
5
f=1MHz
V
CE
=10V
3
2
100
7
5
10
3
2
7
5
10
0.01
3
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
IT13547
0.1
1.0
Collector Current, I -- A
IT13546
Collector-to-Base Voltage, V
CB
-- V
V
(sat) -- CI
C
V
(sat) -- I
CE
BE
C
7
2
I
C
/ I =10
B
I
C
/ I =10
B
3
2
1.0
0.1
7
5
7
5
3
2
3
0.01
0.01
2
0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
0.1
1.0
0.1
1.0
Collector Current, I -- A
IT13548
Collector Current, I -- A
IT13549
C
C
No. A1169-3/4
SFT1202
A S O
A S O
5
5
I
=3A
I
=3A
<10μs
<10μs
CP
CP
3
2.5
2
3
2.5
2
I =2A
C
I =2A
C
1.0
7
1.0
7
5
5
3
2
3
2
0.1
7
0.1
7
5
5
3
2
3
2
Tc=25°C
Single pulse
Ta=25°C
Single pulse
0.01
0.01
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
100
2
3
2
3
5 7
2
3
5 7
2
3
5 7
10
2
3
5 7 2 3
100
0.01
0.1
1.0
10
0.01
0.1
1.0
Collector-to-Emitter Voltage, V
-- V IT13555
Collector-to-Emitter Voltage, V
-- V IT13556
CE
CE
P
-- Ta
P
-- Tc
C
C
1.2
1.0
0.8
0.6
0.4
16
15
14
12
10
8
6
4
0.2
0
2
0
0
20
40
60
80
100
120
140
160
IT13553
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
Ambient Temperature, Ta -- °C
IT13554
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1169-4/4
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