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SGH40N60UFDTU [ONSEMI]

600V, PT IGBT;
SGH40N60UFDTU
型号： SGH40N60UFDTU
厂家： ONSEMI    ONSEMI
描述：

600V, PT IGBT

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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
IGBT  
SGH40N60UFD  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's UFD series of Insulated Gate Bipolar Transistors  
(IGBTs) provides low conduction and switching losses.  
The UFD series is designed for applications such as motor  
control and general inverters where high speed switching is  
a required feature.  
•
•
•
•
High speed switching  
Low saturation voltage : V  
High input impedance  
= 2.1 V @ I = 20A  
CE(sat)  
C
CO-PAK, IGBT with FRD : t = 42ns (typ.)  
rr  
Applications  
AC & DC motor controls, general purpose inverters, robotics, and servo controls.  
C
E
G
TO-3PN  
G
C
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGH40N60UFD  
Units  
V
V
V
Collector-Emitter Voltage  
600  
± 20  
CES  
GES  
Gate-Emitter Voltage  
V
Collector Current  
@ T  
=
25°C  
40  
A
C
I
C
Collector Current  
@ T = 100°C  
20  
A
C
I
I
I
Pulsed Collector Current  
160  
A
CM (1)  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T = 100°C  
15  
A
F
C
160  
A
FM  
P
@ T  
=
25°C  
160  
W
W
°C  
°C  
D
C
@ T = 100°C  
64  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Case  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
(IGBT)  
0.77  
1.7  
40  
θJC  
θJC  
θJA  
(DIODE)  
--  
Thermal Resistance, Junction-to-Ambient  
--  
©2002 Fairchild Semiconductor Corporation  
SGH40N60UFD Rev. A1  
Electrical Characteristics of the IGBT  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
BV  
Collector-Emitter Breakdown Voltage  
Temperature Coefficient of Breakdown  
Voltage  
V
V
= 0V, I = 250uA  
600  
--  
--  
--  
--  
V
CES  
GE  
C
∆B  
/
VCES  
J
= 0V, I = 1mA  
0.6  
V/°C  
GE  
C
∆T  
I
I
Collector Cut-Off Current  
G-E Leakage Current  
V
V
= V  
= V  
, V = 0V  
--  
--  
--  
--  
250  
uA  
nA  
CES  
GES  
CE  
CES  
GE  
, V = 0V  
± 100  
GE  
GES  
CE  
On Characteristics  
V
G-E Threshold Voltage  
I
I
I
= 20mA, V = V  
GE  
3.5  
--  
4.5  
2.1  
2.6  
6.5  
2.6  
--  
V
V
V
GE(th)  
C
C
C
CE  
= 20A,  
= 40A,  
V
V
= 15V  
= 15V  
Collector to Emitter  
Saturation Voltage  
GE  
GE  
V
CE(sat)  
--  
Dynamic Characteristics  
C
C
C
Input Capacitance  
--  
--  
--  
1430  
170  
50  
--  
--  
--  
pF  
pF  
pF  
ies  
V
= 30V V = 0V,  
, GE  
CE  
Output Capacitance  
oes  
res  
f = 1MHz  
Reverse Transfer Capacitance  
Switching Characteristics  
t
t
t
t
Turn-On Delay Time  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
15  
30  
--  
--  
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
nC  
nC  
nC  
nH  
d(on)  
Rise Time  
r
Turn-Off Delay Time  
Fall Time  
65  
130  
150  
--  
V
R
= 300 V, I = 20A,  
C
d(off)  
f
CC  
= 10Ω, V = 15V,  
50  
G
GE  
Inductive Load, T = 25°C  
E
E
E
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
160  
200  
360  
30  
C
on  
off  
--  
600  
--  
ts  
t
t
t
t
d(on)  
r
37  
--  
Turn-Off Delay Time  
Fall Time  
110  
144  
310  
430  
740  
97  
200  
250  
--  
V
= 300 V, I = 20A,  
C
d(off)  
f
CC  
R
= 10Ω, V = 15V,  
G
GE  
Inductive Load, T = 125°C  
E
E
E
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Total Gate Charge  
Gate-Emitter Charge  
Gate-Collector Charge  
Internal Emitter Inductance  
C
on  
off  
ts  
--  
1200  
150  
30  
40  
--  
Q
Q
Q
g
V
V
= 300 V, I = 20A,  
CE  
GE  
C
20  
ge  
gc  
= 15V  
25  
L
Measured 5mm from PKG  
14  
e
Electrical Characteristics of DIODE  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
--  
Typ.  
1.4  
1.3  
42  
Max.  
1.7  
--  
Units  
T
T
T
T
T
T
T
T
=
25°C  
= 100°C  
25°C  
= 100°C  
25°C  
= 100°C  
25°C  
= 100°C  
C
C
C
C
C
C
C
C
V
Diode Forward Voltage  
I
= 15A  
F
V
FM  
--  
=
--  
60  
--  
t
Diode Reverse Recovery Time  
ns  
A
rr  
--  
74  
=
--  
4.5  
6.5  
80  
6.0  
--  
Diode Peak Reverse Recovery  
Current  
I = 15A,  
di/dt = 200A/us  
F
I
rr  
--  
=
--  
180  
--  
Q
Diode Reverse Recovery Charge  
nC  
rr  
--  
220  
©2002 Fairchild Semiconductor Corporation  
SGH40N60UFD Rev. A1  
160  
120  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
Common Emitter  
Common Emitter  
VGE = 15V  
15V  
20V  
℃
TC = 25  
℃
℃
TC  
TC = 125  
= 25  
12V  
VGE = 10V  
40  
0
0
2
4
6
8
0.5  
1
10  
Collector - Emitter Voltage, VCE [V]  
Collector - Emitter Voltage, VCE [V]  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Saturation Voltage  
Characteristics  
4
30  
VCC = 300V  
Load Current : peak of square wave  
Common Emitter  
VGE = 15V  
25  
20  
15  
10  
5
3
2
40A  
20A  
IC = 10A  
1
0
Duty cycle : 50%  
℃
TC = 100  
Power Dissipation = 32W  
0
0.1  
1
10  
100  
1000  
0
30  
60  
90  
120  
150  
℃
[
Frequency [KHz]  
Case Temperature, TC  
]
Fig 3. Saturation Voltage vs. Case  
Fig 4. Load Current vs. Frequency  
Temperature at Variant Current Level  
20  
16  
12  
8
20  
Common Emitter  
Common Emitter  
℃
TC = 25  
℃
TC = 125  
16  
12  
8
40A  
40A  
4
4
20A  
8
20A  
8
IC = 10A  
IC = 10A  
4
0
0
0
4
12  
16  
20  
0
12  
16  
20  
Gate - Emitter Voltage, VGE [V]  
Gate - Emitter Voltage, VGE [V]  
Fig 5. Saturation Voltage vs. V  
Fig 6. Saturation Voltage vs. V  
GE  
GE  
©2002 Fairchild Semiconductor Corporation  
SGH40N60UFD Rev. A1  
2500  
2000  
1500  
1000  
500  
300  
100  
Common Emitter  
Common Emitter  
V
GE = 0V, f = 1MHz  
±
15V  
VCC = 300V, VGE  
IC = 20A  
=
℃
TC = 25  
Ton  
Tr  
℃
℃
TC  
= 25  
T
C = 125  
Cies  
Coes  
Cres  
0
10  
1
10  
Gate Resistance, RG [Ω]  
100  
200  
1
10  
Collector - Emitter Voltage, VCE [V]  
30  
Fig 7. Capacitance Characteristics  
Fig 8. Turn-On Characteristics vs.  
Gate Resistance  
1000  
2000  
Common Emitter  
Common Emitter  
±
15V  
VCC = 300V, VGE  
C = 20A  
=
±
15V  
V
CC = 300V, VGE  
=
I
IC = 20A  
Toff  
Tf  
1000  
℃
℃
TC  
TC = 125  
= 25  
℃
℃
TC  
= 25  
T
C = 125  
Eon  
Eoff  
Eon  
Eoff  
Tf  
100  
100  
50  
20  
1
10  
Gate Resistance, RG [Ω]  
100  
200  
1
10  
Gate Resistance, RG [Ω]  
100  
200  
Fig 9. Turn-Off Characteristics vs.  
Gate Resistance  
Fig 10. Switching Loss vs. Gate Resistance  
1000  
200  
100  
Common Emitter  
±
15V  
VCC = 300V, VGE  
=
RG = 10Ω  
℃
℃
TC  
TC = 125  
= 25  
Toff  
Tf  
Toff  
100  
Ton  
Common Emitter  
Tf  
±
15V  
VCC = 300V, VGE  
RG = 10Ω  
=
Tr  
℃
℃
TC  
TC = 125  
= 25  
10  
20  
10  
15  
20  
25  
30  
35  
40  
10  
15  
20  
25  
30  
35  
40  
Collector Current, IC [A]  
Collector Current, IC [A]  
Fig 11. Turn-On Characteristics vs.  
Collector Current  
Fig 12. Turn-Off Characteristics vs.  
Collector Current  
©2002 Fairchild Semiconductor Corporation  
SGH40N60UFD Rev. A1  
3000  
1000  
15  
12  
9
Common Emitter  
RL = 15 Ω  
℃
TC = 25  
Eoff  
Eon  
300 V  
100  
6
Eoff  
Eon  
VCC = 100 V  
200 V  
Common Emitter  
±
15V  
VCC = 300V, VGE  
=
3
RG = 10Ω  
℃
℃
TC  
= 25  
TC = 125  
0
10  
10  
15  
20  
25  
30  
35  
40  
0
30  
60  
Gate Charge, Qg [ nC ]  
90  
120  
Collector Current, IC [A]  
Fig 13. Switching Loss vs. Collector Current  
Fig 14. Gate Charge Characteristics  
500  
500  
100  
IC MAX. (Pulsed)  
100  
50us  
100us  
IC MAX. (Continuous)  
㎳
1
10  
1
10  
DC Operation  
Single Nonrepetitive  
1
℃
Pulse TC = 25  
Curves must be derated  
linearly with increase  
in temperature  
Safe Operating Area  
VGE=20V, TC=100oC  
10 100  
Collector-Emitter Voltage, VCE [V]  
0.1  
0.1  
0.3  
1
10  
100  
1000  
1
1000  
Collector-Emitter Voltage, VCE [V]  
Fig 15. SOA Characteristics  
Fig 16. Turn-Off SOA Characteristics  
1
0.5  
0.2  
0.1  
0.01  
1E-3  
0.1  
0.05  
0.02  
0.01  
Pdm  
single pulse  
t1  
t2  
Duty factor D = t1 / t2  
Peak Tj = Pdm  
×
Zthjc + TC  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
Rectangular Pulse Duration [sec]  
Fig 17. Transient Thermal Impedance of IGBT  
©2002 Fairchild Semiconductor Corporation  
SGH40N60UFD Rev. A1  
100  
10  
1
℃
℃
TC  
TC = 100  
= 25  
VR = 200V  
IF = 15A  
100  
10  
1
TC  
= 25℃  
TC = 100℃  
0
1
2
3
100  
1000  
Forward Voltage Drop, VF [V]  
di/dt [A/us]  
Fig 18. Forward Characteristics  
Fig 19. Reverse Recovery Current  
800  
120  
VR = 200V  
IF = 15A  
VR = 200V  
I
F = 15A  
℃
℃
TC  
TC = 100  
= 25  
℃
℃
TC  
TC = 100  
= 25  
100  
80  
600  
400  
200  
0
60  
40  
20  
100  
1000  
100  
1000  
di/dt [A/us]  
di/dt [A/us]  
Fig 20. Stored Charge  
Fig 21. Reverse Recovery Time  
©2002 Fairchild Semiconductor Corporation  
SGH40N60UFD Rev. A1  
Mechanical Dimensions  
TO-3PN  
Dimensions in Millimeters  
©2002 Fairchild Semiconductor Corporation  
SGH40N60UFD Rev. A1  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™ PACMAN™  
GTO™  
HiSeC™  
I2C™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
OPTOPLANAR™  
SLIENT SWITCHER® UHC™  
SMART START™  
SPM™  
STAR*POWER™  
Stealth™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FACT™  
UltraFET®  
VCX™  
POP™  
Power247™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™ TinyLogic™  
Quiet Series™ TruTranslation™  
FACT Quiet Series™ MicroPak™  
STAR*POWER is used under license  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. H5  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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SI9136_11

 Multi-Output Power-Supply Controller

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SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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