SGL50N60RUFDTU [ONSEMI]
IGBT，600V，50A，短路额定;
| 型号： | SGL50N60RUFDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，50A，短路额定 局域网 电动机控制 栅 瞄准线 双极性晶体管 开关 |
| 文件： | 总10页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2013
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Features
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
•
•
50 A, 600 V, TC = 100°C
Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A
Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C
High Speed Switching
High Input Impedance
Short Circuit Rating
Applications
Motor Control, UPS, General Inverter.
C
G
TO-264
E
G
C
E
Absolute Maximum Ratings
T = 25C unless otherwise noted
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
Ratings
Unit
V
600
Gate-Emitter Voltage
20
V
Collector Current
@ TC
@ TC = 100C
=
25C
80
A
IC
ICM (1)
IF
Collector Current
50
A
Pulsed Collector Current
150
A
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25C
@ TC = 100C
60
30
A
A
IFM
TSC
PD
90
A
@ TC = 100C
@ TC = 25C
@ TC = 100C
10
us
W
W
C
C
250
100
TJ
Tstg
-55 to +150
-55 to +150
TL
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
Max.
0.5
Unit
C/W
C/W
C/W
--
--
--
1.0
Thermal Resistance, Junction-to-Ambient
25
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
1
www.fairchildsemi.com
Electrical Characteristics of the IGBT
T = 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
GE = 0 V, IC = 1 mA
600
--
--
--
--
V
/
V
0.6
V/C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
--
--
--
--
250
uA
nA
± 100
On Characteristics
VGE(th)
G-E Threshold Voltage
Ic = 50 mA, VCE = VGE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
I
C = 50 A, VGE = 15 V
Collector to Emitter
Saturation Voltage
VCE(sat)
IC = 80 A, VGE = 15 V
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
3311
399
139
--
--
--
pF
pF
pF
VCE=30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
26
89
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
66
100
200
--
ns
VCC = 300 V, IC = 50 A,
R
G = 5.9 , VGE = 15 V,
118
1.68
1.03
2.71
28
ns
Inductive Load, TC = 25C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
--
3.8
--
91
--
ns
Turn-Off Delay Time
Fall Time
68
110
400
--
ns
VCC = 300 V, IC = 50 A,
R
G = 5.9 , VGE = 15 V,
261
1.7
ns
Inductive Load, TC = 125C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
mJ
mJ
mJ
2.31
4.01
--
5.62
V
CC = 300 V, VGE = 15 V
Tsc
Short Circuit Withstand Time
10
--
--
us
@ TC = 100C
Qg
Total Gate Charge
--
--
--
--
145
25
210
35
nC
nC
nC
nH
VCE = 300 V, IC = 50 A,
Qge
Qgc
Le
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V
GE = 15 V
70
100
--
Measured 5mm from PKG
18
Electrical Characteristics of DIODE
T
= 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.9
1.8
70
Max.
2.8
--
Unit
TC
C = 100C
TC 25C
C = 100C
TC 25C
TC = 100C
TC 25C
C = 100C
=
25C
VFM
Diode Forward Voltage
IF = 30 A
V
T
--
=
--
100
--
trr
Diode Reverse Recovery Time
ns
A
T
--
140
6
=
--
7.8
--
Diode Peak Reverse Recovery
Current
IF= 30 A,
diF/dt=200A/us
Irr
--
8
=
--
200
580
360
--
Qrr
Diode Reverse Recovery Charge
nC
T
--
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
2
www.fairchildsemi.com
140
120
100
80
15V
20V
Common Emitter
TC = 25℃
140
120
100
80
Common Emitter
VGE = 15V
TC
= 25℃ ━━
TC = 125℃ ------
12V
60
60
VGE = 10V
40
40
20
20
0
0
0
2
4
6
8
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
60
VCC = 300V
Common Emitter
Load Current : peak of square wave
V
GE = 15V
50
4
3
2
1
0
100A
40
30
20
50A
IC = 30A
10
Duty cycle : 50%
TC = 100℃
Power Dissipation = 70W
0
1
10
100
1000
-50
0
50
100
150
Frequency [KHz]
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
TC = 125℃
T
C = 25℃
16
12
8
100A
100A
4
4
50A
50A
IC = 30A
IC = 30A
8
0
0
0
4
8
12
16
20
0
4
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. V
Fig 5. Saturation Voltage vs. V
GE
GE
©1999 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
SGL50N60RUFD Rev. C1
7000
6000
5000
4000
3000
2000
1000
0
1000
Common Emitter
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 50A
V
T
GE = 0V, f = 1MHz
C = 25℃
TC
= 25℃ ━━
Ton
Tr
TC = 125℃ ------
Cies
Coes
Cres
100
1
10
Collector - Emitter Voltage, VCE [V]
10
100
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 50A
V
I
CC = 300V, VGE = ± 15V
C = 50A
TC 25℃ ━━
TC = 125℃ ------
1000
=
TC
= 25℃ ━━
Eon
Toff
Toff
TC = 125℃ ------
Eoff
Eoff
Tf
Tf
1000
100
10
100
10
100
Gate Resistance, RG []
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
1000
Common Emitter
V
GE = ± 15V, RG = 5.9
TC 25℃ ━━
=
TC = 125℃ ------
Ton
Tr
Toff
Tf
100
Toff
100
Tf
Common Emitter
VGE = ± 15V, RG = 5.9
TC
= 25℃ ━━
TC = 125℃ ------
10
10
20
40
60
80
100
10
20
40
60
80
100
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
4
www.fairchildsemi.com
SGL50N60RUFD Rev. C1
15
12
9
10000
1000
100
Common Emitter
RL = 6
TC = 25℃
Common Emitter
GE = ± 15V, RG = 5.9
TC 25℃ ━━
TC = 125℃ ------
V
=
VCC = 100 V
300 V
200 V
Eoff
Eoff
Eon
6
3
0
10
20
40
60
80
100
0
30
60
90
120
150
180
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
IC MAX. (Pulsed)
100
100
50us
IC MAX. (Continuous)
100us
1㎳
DC Operation
10
1
10
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE = 20V, TC = 100℃
0.1
1
0.3
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
0.01
t1
t2
single pulse
1E-3
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
5
www.fairchildsemi.com
100
10
1
TC
= 25℃ ━━
VR = 200V
IF = 30A
TC = 100℃ ------
100
10
1
TC
= 25℃ ━━
TC = 100℃ ------
0
1
2
3
4
100
1000
di/dt [A/us]
Forward Voltage Drop, VFM [V]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
1400
200
VR = 200V
IF = 30A
VR = 200V
IF = 30A
TC 25℃ ━━
TC = 100℃ ------
180
160
140
120
100
80
1200
TC
= 25℃ ━━
=
TC = 100℃ ------
1000
800
600
400
200
0
60
40
20
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
6
www.fairchildsemi.com
Mechanical Dimensions
Figure 22. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
7
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
8
www.fairchildsemi.com
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