SGP10N60RUFDTU [ONSEMI]
IGBT，600V，10A，短路额定;
| 型号： | SGP10N60RUFDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，10A，短路额定 局域网 电动机控制 栅 瞄准线 双极性晶体管 开关 |
| 文件： | 总10页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2013
SGP10N60RUFD
600 V, 10 A Short Circuit Rated IGBT
General Description
Features
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
Uninterrupted Power Supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
•
•
10 A, 600 V, TC = 100°C
Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 10 A
Typical Fall Time. . . . . . . . . .242ns at TJ = 125°C
High Speed Switching
High Input Impedance
Short Circuit Rating
Applications
Motor Control, UPS, General Inverter
C
G
TO-220
E
G C E
Absolute Maximum Ratings
T = 25C unless otherwise noted
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
Ratings
Unit
V
600
Gate-Emitter Voltage
20
V
Collector Current
@ TC
@ TC = 100C
=
25C
16
A
IC
ICM (1)
IF
Collector Current
10
A
Pulsed Collector Current
30
A
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25C
@ TC = 100C
24
A
12
A
IFM
TSC
PD
92
10
A
@ TC = 100C
@ TC
@ TC = 100C
us
W
W
C
C
=
25C
75
30
TJ
Tstg
-55 to +150
-55 to +150
TL
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
Max.
1.6
Unit
C/W
C/W
C/W
--
--
--
2.5
Thermal Resistance, Junction-to-Ambient
62.5
©1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
1
www.fairchildsemi.com
Electrical Characteristics of the IGBT
T = 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
GE = 0 V, IC = 1 mA
600
--
--
--
--
V
V
0.6
V/C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
--
--
--
--
250
uA
nA
± 100
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 10 mA, VCE = VGE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
I
C = 10 A, VGE = 15 V
Collector to Emitter
Saturation Voltage
VCE(sat)
IC = 16 A, VGE = 15 V
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
660
115
25
--
--
--
pF
pF
pF
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
30
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
Rise Time
Turn-Off Delay Time
Fall Time
36
50
200
--
VCC = 300 V, IC = 10 A,
R
G = 20 , VGE = 15 V,
158
141
215
356
16
Inductive Load, TC = 25C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
--
500
--
33
--
Turn-Off Delay Time
Fall Time
42
60
350
--
VCC = 300 V, IC = 10 A,
R
G = 20 , VGE = 15 V,
242
161
452
613
Inductive Load, TC = 125C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
--
860
V
CC = 300 V, VGE = 15 V
Tsc
Short Circuit Withstand Time
10
--
--
us
@ TC = 100C
Qg
Total Gate Charge
--
--
--
--
30
5
45
10
16
--
nC
nC
nC
nH
VCE = 300 V, IC = 10 A,
Qge
Qgc
Le
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V
GE = 15 V
8
Measured 5mm from PKG
7.5
Electrical Characteristics of DIODE
T
= 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
42
Max.
1.7
--
Unit
TC
C = 100C
TC 25C
C = 100C
TC 25C
TC = 100C
TC 25C
C = 100C
=
25C
VFM
Diode Forward Voltage
IF = 12 A
V
T
--
=
--
60
--
trr
Diode Reverse Recovery Time
ns
A
T
--
60
=
--
3.5
5.6
80
6.0
--
Diode Peak Reverse Recovery
Current
IF = 12 A,
diF/dt=200A/s
Irr
--
=
--
180
--
Qrr
Diode Reverse Recovery Charge
nC
T
--
220
©1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
2
www.fairchildsemi.com
30
25
20
15
10
5
40
35
30
25
20
15
10
5
20V
15V
Common Emitter
TC = 25℃
Common Emitter
VGE = 15V
TC
= 25℃ ━━
TC = 125℃ ------
12V
VGE = 10V
0
0
0
2
4
6
8
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0
16
VCC = 300V
Common Emitter
Load Current : peak of square wave
14
V
GE = 15 V
3.5
3.0
2.5
2.0
1.5
1.0
20 A
12
10
8
10 A
6
4
IC = 5 A
Duty cycle : 50%
2
TC = 100℃
Power Dissipation = 18W
0
-50
0
50
100
150
0.1
1
10
100
1000
Case Temperature, TC [? ]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
Common Emitter
T
C = 125℃
T
C = 25℃
16
12
8
20A
20A
12
4
4
10A
10A
IC = 5A
IC = 5A
0
0
0
4
8
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
3
www.fairchildsemi.com
1400
1200
1000
800
600
400
200
0
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
TC
= 25℃ ━━
Ton
Tr
TC = 125℃ ------
100
Cies
Coes
Cres
10
1
10
Collector - Emitter Voltage, VCE [V]
10
100
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
V
I
CC = 300V, VGE = ± 15V
C = 10A
TC 25℃
1000
TC
= 25℃ ━━
=
━━
TC = 125℃ ------
TC = 125℃ ------
Toff
Eoff
Eon
Toff
Tf
Eoff
Tf
100
100
10
100
Gate Resistance, RG []
10
100
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 20
Common Emitter
VGE = ± 15V, RG = 20
TC
=
25℃ ━━
TC
= 25℃ ━━
TC = 125℃ ------
TC = 125℃ ------
100
Ton
Tr
Toff
Tf
Toff
Tf
100
10
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
4
www.fairchildsemi.com
15
12
9
Common Emitter
RL = 30
TC = 25℃
Common Emitter
GE = ± 15V, RG = 20
TC 25℃ ━━
TC = 125℃ ------
V
1000
=
300 V
200 V
VCC = 100 V
Eoff
6
100
3
Eon
10
0
5
15
20
0
10
20
30
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
50
IC MAX. (Pulsed)
50us
IC MAX. (Continuous)
100us
10
1㎳
10
DC Operation
1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
Safe Operating Area
VGE = 20V, TC = 100℃
1
1
10
100
1000
0.1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.1
Pdm
0.02
0.01
t1
t2
0.01
Duty factor D = t1 / t2
single pulse
Peak Tj = Pdm
Zthjc + T
C
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
5
www.fairchildsemi.com
100
10
1
TC
= 25℃ ━━
VR = 200V
IF = 12A
TC = 100℃ ------
100
10
1
TC
= 25℃ ━━
TC = 100℃ ------
100
1000
0
1
2
3
di/dt [A/us]
Forward Voltage Drop, VFM [V]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
600
100
VR=200V
IF=12A
TC 25℃ ━━
TC = 100℃ ------
VR = 200V
IF = 12A
500
= 25℃ ━━
=
TC
80
60
40
20
0
TC = 100℃ ------
400
300
200
100
0
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
6
www.fairchildsemi.com
Mechanical Dimensions
Figure 22. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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SGP10N60RUFD Rev. C2
7
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I66
©1999 Fairchild Semiconductor Corporation
SGP10N60RUFD Rev. C2
8
www.fairchildsemi.com
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