SI3443DV [ONSEMI]
P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-4A，65mΩ;
| 型号： | SI3443DV |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-4A，65mΩ 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
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implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
Si3443DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2ꢀ5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performanceꢀ
-4 A, -20 Vꢀ RDS(ON) = 0ꢀ065 Ω @ VGS = -4ꢀ5 V
RDS(ON) = 0ꢀ100 Ω @ VGS = -2ꢀ5 V
Fast switching speedꢀ
Low gate charge (7ꢀ2nC typical)ꢀ
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impracticalꢀ
High performance trench technology for extremely
low RDS(ON)
ꢀ
SuperSOTTM-6 package: small footprint (72% smaller
Applications
Load switch
than standard SO-8); low profile (1mm thick)ꢀ
Battery protection
Power management
S
1
6
5
4
D
D
2
3
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
A
±8
Drain Current - Continuous
Drain Current - Pulsed
(Note 1)
-4
-20
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1.6
W
0.8
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
RθJA
°C/W
°C/W
RθJC
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.443
Si3443DV
7’’
8mm
3000 units
2001 Semiconductor Components Industries, LLC.
September-2017, Rev.1
Publication Order Number:
Si3443DV/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
-20
V
VGS = 0 V, ID = -250 µA
Breakdown Voltage Temperature
Coefficient
-16
∆BVDSS
∆TJ
ID = -250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
nA
nA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V
100
-100
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
-0.4
-10
-0.7
2.5
-1.5
V
VDS = VGS, ID = -250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = -250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = -4.5 V, ID = -4 A
0.054 0.065
0.076 0.105
0.077 0.100
Ω
V
V
GS = -4.5 V, ID = -4 A, TJ=125°C
GS = -2.5 V, ID = -3.2 A
ID(on)
gFS
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
A
S
Forward Transconductance
VDS = -5 V, ID = -4 A
9
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
V
DS = -10 V, VGS = 0 V
640
180
90
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -10 V, ID = -1 A
11
19
20
30
42
55
10
ns
ns
V
GS = -4.5 V, RGEN = 6 Ω
26
ns
35
ns
Qg
V
DS = -10 V, ID = -4 A
7.2
1.7
1.6
nC
nC
nC
VGS = -4.5 V,
Qgs
Qgd
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-1.3
-1.2
A
V
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A
(Note 2)
-0.75
Notes:
1ꢀ RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pinsꢀ RθJC is guaranteed by design while RθCA is determined by the user's board designꢀ
a) 78° C/W when mounted on a 1ꢀ0 in2 pad of 2 ozꢀ copperꢀ
b) 156° C/W when mounted on a minimum pad of 2 ozꢀcopperꢀ
2ꢀ Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2ꢀ0%
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2
Typical Characteristics
1.6
1.4
1.2
1
20
VGS = -4.5V
-3.5V
-3.0V
VGS = -2.5V
15
-2.5V
-3.0V
10
-3.5V
-2.0V
-4.0V
-4.5V
5
-1.5V
0
0.8
0
1
2
3
4
5
0
4
8
12
16
20
- ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1ꢀ On-Region Characteristicsꢀ
Figure 2ꢀ On-Resistance Variation
with Drain Current and Gate Voltageꢀ
1.5
1.4
1.3
1.2
1.1
1
0.25
0.2
0.15
0.1
0.05
0
ID = - 4A
GS = - 4.5V
ID = -2A
V
TA = 125oC
TA = 25oC
0.9
0.8
0.7
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3ꢀ On-Resistance Variation
with Temperatureꢀ
Figure 4ꢀ On-Resistance Variation
with Gate-to-Source Voltageꢀ
100
10
TA = -55oC
VGS = 0V
VDS = -5V
25oC
125oC
10
1
8
6
4
2
0
T
= 125oC
25oC
-55oC
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
0.8
1.2
1.6
2
2.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5ꢀ Transfer Characteristicsꢀ
Figure 6ꢀ Body Diode Forward Voltage
Variation with Source Current
and Temperatureꢀ
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3
Typical Characteristics (continued)
5
1250
1000
750
500
250
0
f = 1 MHz
GS = 0 V
VDS = -5V
-10V
-15V
ID = -4A
V
4
3
2
1
0
CISS
COSS
CRSS
0
2
4
6
8
10
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7ꢀ Gate-Charge Characteristics
Figure 8ꢀ Capacitance Characteristics
100
10
5
4
3
2
1
SINGLE PULSE
R
θJA = 156oC/W
TA = 25oC
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
DC
1
VGS= -4.5V
SINGLE PULSE
RθJA= 156oC/W
TA= 25oC
0.1
0.01
0
0.1
1
10
100
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9ꢀ Maximum Safe Operating Area
Figure 10ꢀ Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
θJA
R
θJA
= 156°C/W
θJA
0.2
0.1
0.1
0.05
P(pk)
t
0.05
1
t
2
0.02
0.01
T
- T = P * R
(t)
θJA
J
A
0.02
0.01
Duty Cycle, D = t / t
1
2
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
t
1
, TIME (sec)
Figure 11ꢀ Transient Thermal Response Curveꢀ
Thermal characterization performed using the conditions described in Note 1bꢀ
Transient themal response will change depending on the circuit board designꢀ
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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