SMMBT6521LT1G [ONSEMI]
NPN 双极小信号晶体管;
| 型号： | SMMBT6521LT1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极小信号晶体管 小信号双极晶体管 |
| 文件： | 总7页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT6521LT1
Amplifier Transistor
NPN Silicon
Features
• Pb−Free Package is Available
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
25
Unit
Vdc
1
V
CEO
V
CBO
V
EBO
BASE
40
Vdc
4.0
Vdc
2
EMITTER
Collector Current — Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
3
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
P
D
1
(Note 1) @T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
2
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
SOT−23 (TO−236)
CASE 318−08
STYLE 6
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) @T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−55 to +150
stg
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
RO M G
G
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
1
RO
M
= Specific Device Code
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT6521LT1
SOT−23
3000/Tape & Reel
MMBT6521LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 4
MMBT6521LT1/D
MMBT6521LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(I = 0.5 mAdc, I = 0)
25
4.0
−
−
−
C
B
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
(BR)EBO
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
CBO
0.5
10
mAdc
CB
E
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
nAdc
EBO
−
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 100 mAdc, V = 10 Vdc)
150
300
−
600
C
CE
(I = 2.0 mAdc, V = 10 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 50 mAdc, I = 5.0 mAdc)
V
Vdc
CE(sat)
−
0.5
C
B
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
C
pF
dB
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
−
−
3.5
3.0
CB
E
Noise Figure
NF
(I = 10 mAdc, V = 5.0 Vdc, Power Bandwidth = 15.7 kHz,
C
CE
3.0 dB points @ = 10 Hz and 10 kHz)
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ꢀ3.0 V
+ꢀ3.0 V
t
1
10 < t < 500 ms
1
DUTY CYCLE = 2%
300 ns
+10.9 V
<1.0 ns
275
275
+10.9 V
DUTY CYCLE = 2%
10 k
10 k
0
−ꢀ0.5 V
<1.0 ns
C
S
< 4.0 pF*
C < 4.0 pF*
S
−ꢀ9.1 V
1N916
*Total shunt capacitance of test jig and connectors
Figure 2. Turn−On Time
Figure 3. Turn−Off Time
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2
MMBT6521LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20
10
100
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
50
I
C
= 1.0 mA
R ≈ ∞
S
R
S
= 0
20
300 mA
300 mA
100 mA
10
5.0
7.0
5.0
100 mA
2.0
1.0
10 mA
30 mA
0.5
0.2
0.1
30 mA
3.0
2.0
10 mA
10 20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10ꢁk
10
20
50 100 200
500 1ꢁk
2ꢁk
5ꢁk 10ꢁk
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 5. Noise Current
Figure 4. Noise Voltage
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500ꢁk
1ꢁM
500ꢁk
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
200ꢁk
100ꢁk
50ꢁk
200ꢁk
100ꢁk
50ꢁk
20ꢁk
20ꢁk
10ꢁk
10ꢁk
5ꢁk
2.0 dB
1.0 dB
5ꢁk
2ꢁk
1ꢁk
3.0 dB
4.0 dB
2.0 dB
2ꢁk
1ꢁk
3.0 dB
5.0 dB
8.0 dB
6.0 dB
10 dB
500
500
200
100
50
200
100
10
20 30
50 70 100
200 300
500 700 1ꢁk
10
20 30
50 70 100
200 300
500 700 1ꢁk
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Narrow Band, 1.0 kHz
Figure 6. Narrow Band, 100 Hz
500ꢁk
10 Hz to 15.7 kHz
200ꢁk
100ꢁk
50ꢁk
Noise Figure is defined as:
2
20ꢁk
2
R
n S
2
1ń2
e
n
) 4KTR ) I
S
10 ǒ
Ǔ
NF + 20 log
10ꢁk
5ꢁk
4KTR
S
1.0 dB
e
I
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
n
2ꢁk
1ꢁk
2.0 dB
n
−23
3.0 dB
K
T
R
= Boltzman’s Constant (1.38 x 10
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
j/°K)
500
5.0 dB
8.0 dB
S
200
100
50
20 30
50 70 100
200 300
500 700 1ꢁk
10
I , COLLECTOR CURRENT (mA)
C
Figure 8. Wideband
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3
MMBT6521LT1
TYPICAL STATIC CHARACTERISTICS
400
200
T = 125°C
J
25°C
−ꢀ55°C
100
80
60
V
V
= 1.0 V
= 10 V
CE
CE
40
0.004 0.006 0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
3.0
2.0
5.0 7.0 10
20
30
50 70 100
I , COLLECTOR CURRENT (mA)
C
Figure 9. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
100
T = 25°C
PULSE WIDTH = 300 ms
DUTY CYCLE ≤ 2.0%
A
T = 25°C
J
I
B
= 500 mA
400 mA
80
60
300 mA
200 mA
I
C
= 1.0 mA
10 mA
50 mA
100 mA
40
20
0
100 mA
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
5.0 10 20
0
5.0
10
15
20
25
30
35
40
I , BASE CURRENT (mA)
B
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 10. Collector Saturation Region
Figure 11. Collector Characteristics
1.4
1.2
1.6
0.8
0
*APPLIES for I /I ≤ h /2
C B
FE
T = 25°C
J
25°C to 125°C
−55°C to 25°C
1.0
0.8
0.6
0.4
*q for V
VC
CE(sat)
V
@ I /I = 10
C B
BE(sat)
−ꢀ0.8
−ꢀ1.6
−ꢀ2.4
V
BE(on)
@ V = 1.0 V
CE
25°C to 125°C
−55°C to 25°C
0.2
0
q
for V
BE
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
0.5 1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0 10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. “On” Voltages
Figure 13. Temperature Coefficients
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4
MMBT6521LT1
TYPICAL DYNAMIC CHARACTERISTICS
300
200
1000
V
= 3.0 V
CC
I /I = 10
700
500
C B
T = 25°C
t
s
J
100
70
300
200
50
t
r
100
70
30
20
t
f
50
t @ V
d
= 0.5 Vdc
BE(off)
V
= 3.0 V
10
CC
I /I = 10
30
20
C B
7.0
5.0
I = I
B1 B2
T = 25°C
J
3.0
10
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 14. Turn−On Time
Figure 15. Turn−Off Time
500
10
7.0
5.0
T = 25°C
J
f = 1.0 MHz
T = 25°C
J
f = 100 MHz
300
200
C
ib
V
CE
= 20 V
5.0 V
C
ob
3.0
2.0
100
70
50
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 16. Current−Gain — Bandwidth Product
Figure 17. Capacitance
20
10
200
100
V
= 10 Vdc
V
= 10 Vdc
CE
f = 1.0 kHz
CE
f = 1.0 kHz
h
fe
≈ 200 @ I = 1.0 mA
C
T = 25°C
A
T = 25°C
A
7.0
5.0
70
50
h
≈ 200 @ I = 1.0 mA
fe
C
3.0
2.0
30
20
1.0
0.7
0.5
10
7.0
5.0
0.3
0.2
3.0
2.0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 18. Input Impedance
Figure 19. Output Admittance
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5
MMBT6521LT1
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
FIGURE 21
DUTY CYCLE, D = t /t
1
2
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
READ TIME AT t (SEE AN−569)
1
q
JA
(pk)
0.02
0.01
Z
T
= r(t) ꢀ R
− T = P
A
q
JA(t)
Z
q
JA(t)
J(pk)
0.03
0.02
t
1
SINGLE PULSE
t
2
0.01
0.01 0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
500 1.0ꢁk 2.0ꢁk 5.0ꢁk 10ꢁk 20ꢁk
100ꢁk
50ꢁk
t, TIME (ms)
Figure 20. Thermal Response
4
3
10
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
V
= 30 Vdc
CC
A train of periodical power pulses can be represented by
the model as shown in Figure 21. Using the model and the de-
vice thermal response the normalized effective transient ther-
mal resistance of Figure 20 was calculated for various duty
cycles.
10
10
2
I
CEO
1
10
10
To find Z
, multiply the value obtained from Figure 20
qJA(t)
I
by the steady state value R
Example:
.
0
CBO
AND
qJA
I
@ V
= 3.0 Vdc
CEX
BE(off)
The MPS6521 is dissipating 2.0 watts peak under the follow-
ing conditions:
−1
10
10
t = 1.0 ms, t = 5.0 ms. (D = 0.2)
−2
1
2
−4 −2
0
+20 +40 +60 +80 +100 +120 +140 +160
Using Figure 20 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
0
0
T , JUNCTION TEMPERATURE (°C)
J
Figure 21.
The peak rise in junction temperature is therefore
DT = r(t) x P
x R
= 0.22 x 2.0 x 200 = 88°C.
(pk)
qJA
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.
400
200
The safe operating area curves indicate I −V limits of
C
CE
100 ms
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
1.0 ms
10 ms
1.0 s
100
T
= 25°C
C
The data of Figure 22 is based upon T
T is variable depending upon conditions. Pulse curves are
= 150°C; T or
J(pk)
C
dc
60
40
T = 25°C
A
A
dc
valid for duty cycles to 10% provided T
≤ 150°C. T
J(pk)
J(pk)
may be calculated from the data in Figure 20. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
20
10
T = 150°C
J
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
40
2.0
4.0 6.0 8.0 10
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 22.
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6
MMBT6521LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
H
E
E
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
c
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
b
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT6521LT1D
相关型号：
SMMBTA06LT1
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
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