SNSS20101JT1G [ONSEMI]
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal;
| 型号： | SNSS20101JT1G |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS20101JT1G,
SNSS20101JT1G
20 V, 1.0 A, Low VCE(sat)
NPN Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
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CE(sat)
20 VOLTS, 1.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
SC−89
CASE 463C
STYLE 1
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
COLLECTOR
3
Features
1
AEC−Q101 Qualified and PPAP Capable
BASE
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices*
2
EMITTER
MARKING DIAGRAM
3
Collector
xx M G
G
1
2
Base Emitter
xx = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
NSS20101JT1G
SC−89
3,000 /
(Pb−Free)
Tape & Reel
SNSS20101JT1G
SC−89
3,000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2011 − Rev. 1
NSS20101J/D
NSS20101JT1G, SNSS20101JT1G
MAXIMUM RATINGS (T = 25C)
A
Rating
Symbol
Max
20
Unit
Vdc
Vdc
Vdc
A
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
40
6.0
1.0
2.0
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
I
C
I
A
CM
ESD
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
(Note 1)
T = 25C
255
2.0
mW
mW/C
A
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
C/W
490
Total Device Dissipation
P
(Note 2)
(Note 2)
D
T = 25C
300
2.4
mW
A
Derate above 25C
mW/C
Thermal Resistance,
Junction−to−Ambient
R
C/W
q
JA
415
Junction and Storage Temperature Range
T , T
−55 to +150
C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2
2
1. FR−4 @ 100 mm , 1 oz. copper traces.
2. FR−4 @ 500 mm , 1 oz. copper traces.
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2
NSS20101JT1G, SNSS20101JT1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
20
40
C
B
Collector−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 0.1 mAdc, I = 0)
Vdc
6.0
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
mAdc
mAdc
CBO
0.1
0.1
CB
E
Emitter Cutoff Current
I
EBO
(V = 5.0 Vdc)
EB
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = 10 mA, V = 2.0 V)
200
200
150
100
C
CE
(I = 100 mA, V = 2.0 V)
500
C
CE
(I = 500 mA, V = 2.0 V)
C
CE
(I = 1.0 A, V = 2.0 V)
C
CE
Collector−Emitter Saturation Voltage (Note 3)
(I = 10 mA, I = 0.5 mA)
V
V
CE(sat)
0.015
0.040
0.115
0.220
C
B
(I = 0.10 A, I = 0.010 A)
C
B
(I = 0.5 A, I = 0.050 A)
C
B
(I = 1.0 A, I = 0.1 A)
C
B
Base−Emitter Saturation Voltage (Note 3)
(I = 0.5 A, I = 50 mA)
V
V
V
BE(sat)
1.1
C
B
Base−Emitter Turn−on Voltage (Note 3)
(I = 0.5 A, V = 2.0 V)
V
BE(on)
0.90
C
CE
Cutoff Frequency
(I = 100 mA, V = 2.0 V, f = 100 MHz)
f
MHz
T
350
40
6
C
CE
Input Capacitance (V = 0.5 V, f = 1.0 MHz)
Cibo
pF
pF
EB
Output Capacitance (V = 4.0 V, f = 1.0 MHz)
Cobo
CB
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
TYPICAL CHARACTERISTICS
0.40
0.35
600
150C
V
CE
= 2 V
500
400
300
200
0.30
0.25
0.20
0.15
0.10
25C
Note 2
Note 1
−55C
100
0
0.05
0
0
20
40
60
80
100
120
140 160
0.001
0.01
0.1
1
10
T , JUNCTION TEMPERATURE (C)
J
I , COLLECTOR CURRENT (A)
C
Figure 1. Power Derating
Figure 2. DC Current Gain
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3
NSS20101JT1G, SNSS20101JT1G
TYPICAL CHARACTERISTICS
1
600
500
150C
V
CE
= 4 V
150C
−55C
25C
0.1
400
300
200
25C
−55C
0.01
100
0
I /I = 10
C
B
0.001
0.001
0.01
0.1
1
10
10
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain
Figure 4. Collector−Emitter Saturation Voltage
1
1.4
1.2
I /I = 20
C
I /I = 10
C
B
B
150C
−55C
25C
0.1
1.0
0.8
0.6
−55C
25C
0.01
150C
0.4
0.2
0.001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Base−Emitter Saturation Voltage
1.6
1.4
1.2
1.0
0.8
1.4
1.2
V
CE
= 2 V
I /I = 50
C
B
1.0
0.8
0.6
−55C
25C
−55C
25C
150C
0.6
150C
0.4
0.2
0.4
0.2
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Base−Emitter Voltage
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4
NSS20101JT1G, SNSS20101JT1G
TYPICAL CHARACTERISTICS
1
60
I
= 2 A
T = 25C
C
J
50
40
30
20
f
= 1 MHz
TEST
I
= 1 A
C
I
C
= 0.5 A
0.1
I
C
= 0.1 A
10
0
I
= 50 mA
C
0.01
0.0001
0.001
0.01
0.1
1
0
1
2
3
4
5
6
7
8
I , BASE CURRENT (A)
B
V
EB
, BASE EMITTER VOLTAGE (V)
Figure 9. Saturation Region
Figure 10. Input Capacitance
12
10
8
400
350
300
250
200
150
100
T = 25C
J
T = 25C
J
f
= 1 MHz
TEST
f
= 1 MHz
TEST
V
CE
= 2 V
6
4
2
0
50
0
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
V
CB
, COLLECTOR−BASE VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
Figure 11. Output Capacitance
Figure 12. Current Gain Bandwidth Product
10
T = 25C
J
10 ms
0.5 ms
100 ms
1 ms
1
Thermal Limit
0.1
0.01
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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5
NSS20101JT1G, SNSS20101JT1G
PACKAGE DIMENSIONS
SC−89, 3 LEAD
CASE 463C−03
ISSUE C
A
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
−Y−
1
2
4. 463C−01 OBSOLETE, NEW STANDARD 463C−02.
K
MILLIMETERS
DIM MIN NOM MAX
INCHES
MIN NOM MAX
G
2 PL
A
B
C
D
G
H
J
K
L
M
N
S
1.50
0.75
0.60
0.23
1.60
0.85
0.70
1.70 0.059 0.063 0.067
0.95 0.030 0.034 0.040
0.80 0.024 0.028 0.031
0.33 0.009 0.011 0.013
0.020 BSC
3 PL
D
M
0.08 (0.003)
X Y
0.28
0.50 BSC
0.53 REF
0.15
0.40
1.10 REF
−−−
0.021 REF
0.10
0.30
0.20 0.004 0.006 0.008
0.50 0.012 0.016 0.020
0.043 REF
−−−
−−−
1.50
10
10
−−−
−−−
−−−
−−−
10
10
_
_
N
M
−−−
1.60
_
_
J
1.70 0.059 0.063 0.067
C
STYLE 1:
SEATING
PLANE
−T−
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
H
H
L
G
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NSS20101J/D
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