SPZT3904T1G [ONSEMI]
NPN Bipolar Transistor;
| 型号： | SPZT3904T1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN Bipolar Transistor 小信号双极晶体管 |
| 文件： | 总7页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT3904T1G
General Purpose Transistor
NPN Silicon
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
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Compliant
MAXIMUM RATINGS
COLLECTOR
2, 4
Rating
Collector -- Emitter Voltage
Collector -- Base Voltage
Symbol Value
Unit
Vdc
V
V
V
40
60
CEO
CBO
EBO
1
Vdc
BASE
Emitter -- Base Voltage
6.0
200
Vdc
3
Collector Current -- Continuous
THERMAL CHARACTERISTICS
Characteristic
I
mAdc
C
EMITTER
Symbol
Max
Unit
Total Device Dissipation (Note 1)
P
1.5
12
W
mW/C
MARKING
DIAGRAM
D
T
= 25C
A
Thermal Resistance Junction--to--Ambient
(Note 1)
R
R
83.3
C/W
θ
JA
JA
AYW
1AM G
G
SOT--223
CASE 318E
STYLE 1
Thermal Resistance Junction--to--Lead #4
Junction and Storage Temperature Range
35
C/W
C
θ
T , T
J
-- 5 5 t o
+150
stg
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1AM
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb--Free Package
2
1. FR-- 4 with 1 oz and 713 mm of copper area.
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
PZT3904T1G
SOT--223
(Pb--Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 -- Rev. 3
PZT3904T1/D
PZT3904T1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS (Note 2)
Symbol
Min
Max
Unit
Collector -- Emitter Breakdown Voltage (Note 3)
V
40
60
6.0
--
--
--
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
C
B
Collector -- Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
C
E
Emitter -- Base Breakdown Voltage
(I = 10 mAdc, I = 0)
--
E
C
Base Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
50
50
nAdc
BL
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
--
CEX
CE
EB
ON CHARACTERISTICS (Note 3)
DC Current Gain (Note 2)
H
FE
--
(I = 0.1 mAdc, V = 1.0 Vdc)
40
70
100
60
30
--
--
300
--
--
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
C
CE
Collector -- Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
BE(sat)
--
--
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base -- Emitter Saturation Voltage (Note 3)
(I = 10 mAdc, I = 1.0 mAdc)
V
0.65
--
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL-- SIGNAL CHARACTERISTICS
Current -- Gain -- Bandwidth Product
f
300
--
--
MHz
pF
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
obo
5.0
8.0
10
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
--
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
Input Impedance
h
1.0
0.5
100
1.0
--
kΩ
ie
re
fe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
CE
C
-- 4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
8.0
400
40
X 10
--
CE
C
Small -- Signal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
CE
C
Output Admittance
h
mMhos
dB
oe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
nF
5.0
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 kΩ, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
--
--
--
--
35
35
ns
d
(V = 3.0 Vdc, V = -- 0.5 Vdc,
CC
BE
I
= 10 mAdc, I = 1.0 mAdc)
C
B1
Rise Time
t
r
Storage Time
200
50
s
(V = 3.0 Vdc,
CC
I
= 10 mAdc, I = I = 1.0 mAdc)
C
B1 B2
Fall Time
t
f
2. FR-- 5 = 1.0 ¢ 0.75 ¢ 0.062 in.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
PZT3904T1G
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-- 0 . 5 V
C < 4 pF*
C < 4 pF*
S
S
1N916
-- 9 . 1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
PZT3904T1G
TYPICAL TRANSIENT CHARACTERISTICS
T = 25C
J
T = 125C
J
10
5000
V
= 40 V
CC
3000
2000
7.0
I /I = 10
C B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
50
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I = 10
C B
V
= 40 V
CC
300
200
300
200
I /I = 10
C B
100
70
100
70
t @ V = 3.0 V
r
CC
50
50
30
20
30
20
40 V
15 V
10
10
7
5
2.0 V
7
5
t @ V = 0 V
d
OB
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn -- On Time
Figure 6. Rise Time
500
500
1
t = t -- / t
8 f
s
s
V
I
= 40 V
= I
B1 B2
CC
300
200
300
200
I = I
B1 B2
I /I = 20
C B
I /I = 10
C B
I /I = 20
C B
100
70
100
70
50
I /I = 20
C B
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
10
7
5
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
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4
PZT3904T1G
TYPICAL AUDIO SMALL-- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
12
10
8
14
SOURCE RESISTANCE = 200 Ω
= 1.0 mA
f = 1.0 kHz
I
C
= 1.0 mA
12
10
8
I
C
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 Ω
= 0.5 mA
I
C
= 50 mA
I
C
6
4
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
= 50 mA
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500 Ω
= 100 mA
I
C
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k Ω)
S
Figure 9.
Figure 10.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300
200
100
50
20
10
5
100
70
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
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5
PZT3904T1G
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125C
J
V
= 1.0 V
CE
+25C
0.7
0.5
-- 55 C
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70
100
200
I , COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T = 25C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.2
1.0
0.8
1.0
T = 25C
J
V
@ I /I =10
C B
BE(sat)
+25C TO +125C
-- 5 5 C TO +25C
0.5
0
θ
FOR V
CE(sat)
VC
V
@ V =1.0 V
CE
BE
0.6
0.4
-- 0 . 5
-- 1 . 0
-- 5 5 C TO +25C
+25C TO +125C
V
@ I /I =10
CE(sat)
C B
θ
FOR V
BE(sat)
VB
0.2
0
-- 1 . 5
-- 2 . 0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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6
PZT3904T1G
PACKAGE DIMENSIONS
SOT--223 (TO--261)
CASE 318E--04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
-- -- --
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0 . 2 0
1.50
6.70
0
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
-- -- --
MAX
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0 . 0 0 8
0.060
0.264
0
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
-- -- --
H
E
E
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
-- -- --
1
3
b
e1
e
1.75
7.00
--
2.00
7.30
10
0.069
0.276
--
0.078
0.287
10
C
θ
H
E
A
θ
0.08 (0003)
STYLE 1:
A1
PIN 1. BASE
L
L1
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
SCALE 6:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PZT3904T1/D
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