SS8550CBU [ONSEMI]
PNP外延硅晶体管;
| 型号： | SS8550CBU |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 放大器 晶体管 |
| 文件： | 总6页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
PNP Epitaxial Silicon
Transistor
TO−92−3
CASE 135AN
SS8550
1
2
3
Features
• 2 W Output Amplifier of Portable Radios in Class B Push−Pull
Operation
• Complementary to SS8050
TO−92−3
CASE 135AR
• Collector Current: I = 1.5 A
C
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
2
3
Compliant
1. Emitter
2. Base
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
3. Collector
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
−40
Unit
V
V
CBO
V
CEO
V
EBO
MARKING DIAGRAM
−25
V
−6
V
AS8
550x
YWW
I
C
−1.5
A
Junction Temperature
Storage Temperature
T
J
150
°C
°C
T
STG
−65 to 150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
S8550x
= Specific Device Code
Line 1: A = Assembly Location
Line 2: x = C or D
THERMAL CHARACTERISTICS (Note 1)
Line 3: Y = Year
(T = 25°C unless otherwise noted)
A
WW= Work Week
Parameter
Power Dissipation
Symbol
Value
1
Unit
W
P
D
D
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Power Dissipation Derate Above 25°C
P
8
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
125
q
JA
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
August, 2021 − Rev. 3
SS8550/D
SS8550
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
Conditions
= −100 mA, I = 0
Min.
−40
−25
−6
Typ.
Max.
Unit
V
BV
BV
BV
I
I
CBO
CEO
EBO
C
E
= −2 mA, I = 0
V
C
B
I
= −100 mA, I = 0
V
E
C
I
V
= −35 V, I = 0
−100
−100
nA
nA
CBO
CB
EB
CE
CE
CE
E
I
Emitter Cut−Off Current
V
V
V
V
= −6 V, I = 0
C
EBO
h
FE1
h
FE2
h
FE3
DC Current Gain
= −1 V, I = −5 mA
45
85
40
170
160
C
= −1 V, I = −100 mA
300
C
= −1 V, I = −800 mA
80
C
V
V
(sat)
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Base−Emitter On Voltage
I
I
= −800 mA, I = −80 mA
−0.28
−0.98
−0.66
15
−0.50
−1.20
−1.00
V
V
CE
BE
C
C
B
= −800 mA, I = −80 mA
B
V
(on)
V
V
V
= −1 V, I = −10 mA
V
BE
CE
CB
CE
C
C
ob
f
T
Output Capacitance
= −10 V, I = 0, f = 1 MHz
pF
MHz
E
Current Gain Bandwidth Product
= −10 V, I = −50 mA
100
200
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
C
D
h
FE2
120 ~ 200
160 ~ 300
ORDERING INFORMATION
Part Number
Top Mark
S8550C
S8550C
S8550D
S8550D
Package
Shipping
SS8550CBU
TO−92−3, case 135AN (Pb−Free)
TO−92−3, case 135AR (Pb−Free)
TO−92−3, case 135AN (Pb−Free)
TO−92−3, case 135AR (Pb−Free)
10,000 Units/ Bulk Box
2,000 Units/ Fan−Fold
10,000 Units/ Bulk Box
2,000 Units/ Fan−Fold
SS8550CTA
SS8550DBU
SS8550DTA
www.onsemi.com
2
SS8550
TYPICAL PERFORMANCE CHARACTERISTICS
−0.5
−0.4
−0.3
−0.2
−0.1
1000
VCE = −1V
IB=−4.0mA
IB=−3.5mA
IB=−3.0mA
100
IB=−2.5mA
IB=−2.0mA
IB=−1.5mA
10
IB=−1.0mA
IB=−0.5mA
1
−0.1
−0.4
−0.8
−1.2
−1.6
−2.0
−1
−10
−100
−1000
I , COLLECTOR CURRENT [mA]
C
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
−10000
−1000
−100
−100
IC=10IB
VCE = −1V
−10
−1
VBE(sat)
VCE(sat)
−10
−0.1
−0.1
−1
−10
−100
−1000
0
−0.2 −0.4
−0.6 −0.8 −1.0
−1.2
I , COLLECTOR CURRENT [mA]
C
V , BASE−EMITTER VOLTAGE [V]
BE
Figure 3. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
1000
100
10
100
VCE=−10V
f=1MHz
IE=0
10
1
−1
−1
−10
−100
−1000
−10
−100
−1000
V , COLLECTOR−BASE VOLTAGE [V]
CB
I , COLLECTOR CURRENT [mA]
C
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.825x4.76
CASE 135AN
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13880G
TO−92 3 4.825X4.76
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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