SS8550D3 [JCST]
Transistor;
| 型号： | SS8550D3 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
SS8550 TRANSISTOR (PNP)
FEATURES
Complimentary to SS8050
1. Base
2. Emitter
3. Collector
MARKING: Y2
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-1.5
0.2
A
PC
W
℃
℃
Tj
150
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-100μA, IE=0
IC=-0.1mA, IB=0
IE=-100μA, IC=0
VCB=-40V, IE=0
-40
-25
-5
V
V
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
hFE(1)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
IC=-1V,VCE=-10mA
IB=-1A
120
40
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
VCE(sat)
VBE(sat)
VBE(on)
VBEF
-0.5
-1.2
-1
V
V
V
V
Base-emitter positive favor voltage
-1.55
V
CE=-10V,IC=-50mA,
Transition frequency
fT
100
MHz
pF
f=30MHz
output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
20
CLASSIFICATION OF hFE
(1)
Rank
L
H
J
Range
120-200
200-350
300-400
Typical Characteristics
SS8550
-0.5
-0.4
-0.3
-0.2
-0.1
1000
100
10
VCE = -1V
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
1
-0.1
-0.4
-0.8
-1.2
-1.6
-2.0
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
-10000
-1000
-100
-100
-10
-1
IC=10IB
VCE = -1V
VBE(sat)
VCE(sat)
-10
-0.1
-0.1
-0.0
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
100
10
1
1000
100
10
f=1MHz
IE=0
VCE=-10V
-1
-10
-100
-1000
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
相关型号：
SS8550DBU
PNP Epitaxial Silicon Transistor, 3LD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3), 10000/BULK
FAIRCHILD
SS8550DJ18Z
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
FAIRCHILD
SS8550J05Z
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
FAIRCHILD
SS8550J18Z
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明