STMFSC017N15M5 [ONSEMI]
MOSFET - PowerTrench®, N-Channel, Dual Cool®, Shielded Gate, 150 V, 40 A, 17 mΩ;
| 型号： | STMFSC017N15M5 |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - PowerTrench®, N-Channel, Dual Cool®, Shielded Gate, 150 V, 40 A, 17 mΩ 栅 |
| 文件： | 总9页 (文件大小：901K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - PowerTrench),
N-Channel, Dual Cool),
Shielded Gate
ELECTRICAL CONNECTION
S
D
D
D
D
S
S
G
150 V, 17 mW, 40 A
N-Channel MOSFET
STMFSC017N15M5
General Description
D
This N−Channel MOSFET is produced using onsemi’s advanced
D
D
®
D
PowerTrench process that incorporates Shielded Gate technology.
®
Pin 1
Advancements in both silicon and Dual Cool package technologies
have been combined to offer the lowest r
excellent switching performance by extremely low Junction−to−
G
while maintaining
DS(on)
S
S
Pin 1
S
Ambient thermal resistance.
Top
Bottom
Features
DFN8, Dual CoolE
CASE 506EG
• Shielded Gate MOSFET Technology
TM
• Dual Cool Top Side Cooling DFN8 Package
• Max r
• Max r
= 17 mW at V = 10 V, I = 9.3 A
GS D
= 25 mW at V = 6 V, I = 7.8 A
DS(on)
MARKING DIAGRAM
DS(on)
GS
D
• High Performance Technology for Extremely Low rDS(on)
• 100% UIL Tested
2JAYWZ
• RoHS Compliant
Applications
• Primary MOSFET in DC − DC Converters
• Secondary Synchronous Rectifier
• Load Switch
2J
A
= Device Code
= Plant Code
YW = Date Code
= Lot Code
Z
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Ratings
150
Unit
V
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
V
DS
V
GS
20
V
I
D
A
Continuous, T = 25°C
40
9.3
100
C
Continuous, T = 25°C (Note 1a)
A
Pulsed (Note 4)
E
Single Pulse Avalanche Energy
(Note 3)
294
mJ
W
AS
P
Power Dissipation:
D
T
A
= 25°C
125
3.2
C
T = 25°C (Note 1a)
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2023 − Rev. 3
STMFSC017N15M5/D
STMFSC017N15M5
Table 1. THERMAL CHARACTERISTICS
Symbol
Characteristic
Value
2.5
1.0
38
Unit
R
q
JC
R
q
JC
R
q
JA
R
q
JA
R
q
JA
R
q
JA
R
q
JA
Thermal Resistance, Junction to Case (Top Source)
Thermal Resistance, Junction to Case (Bottom Drain)
Thermal Resistance, Junction to Ambient (Note 1a)
Thermal Resistance, Junction to Ambient (Note 1b)
Thermal Resistance, Junction to Ambient (Note 1i)
Thermal Resistance, Junction to Ambient (Note 1j)
Thermal Resistance, Junction to Ambient (Note 1k)
°C/W
81
16
23
11
ORDERING INFORMATION AND PACKAGE MARKING
†
Device
Marking
Package
Reel Size
Tape Width
Shipping
STMFSC017N15M5
86200
DFN8
13″
12 mm
3000 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
150
V
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
DSS
= 250 mA, referenced to 25°C
105
mV/°C
D
/DT
J
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
1
mA
DS
GS
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
3.3
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
GS(th)
J
= 250 mA, referenced to 25 °C
−11
mV/°C
D
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 9.3 A
14
17
29
32
17
25
35
D
= 6 V, I = 7.8 A
D
r
Static Drain to Source On Resistance
Forward Transconductance
mW
DS(on)
= 10 V, I = 9.3 A, T = 125 °C
D
J
g
FS
= 10 V, I = 9.3 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
2110
205
8.1
2955
290
15
pF
pF
pF
W
iss
V
= 75 V, V = 0 V,
GS
DS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
f = 1 MHz
C
rss
R
0.1
1.5
3.0
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
16
4
29
10
37
10
ns
ns
ns
ns
d(on)
t
r
V
= 75 V, I = 9.3 A, V = 10 V,
D GS
GEN
DD
R
= 6 W
t
Turn-Off Delay Time
Fall Time
23
5
d(off)
t
f
V
D
= 0 V to 10 V, V = 75 V,
DD
GS
30
19
42
27
nC
nC
I
= 9.3 A
Q
Total Gate Charge
g
V
D
= 0 V to 5 V, V = 75 V,
DD
= 9.3 A
GS
I
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2
STMFSC017N15M5
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Gate to Source Charge
Gate to Drain “Miller” Charge
Test Condition
Min
Typ
9.7
5.6
Max
Unit
nC
Q
gs
Q
gd
V
DD
= 75 V, I = 9.3 A
D
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 0 V, IS = 9.3 A (Note 2)
VGS = 0 V, IS = 2.6 A (Note 2)
0.8
0.7
79
1.3
1.2
VSD
Source to Drain Diode Forward Voltage
V
t
rr
Reverse Recovery Time
126
176
ns
IF = 9.3 A, di/dt = 100 A/ms
Q
Reverse Recovery Charge
126
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Max
2.5
1.0
38
81
27
34
16
19
26
61
16
23
11
Unit
RθJC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
1. R
°C/W
(Note 1g)
(Note 1h)
(Note 1i)
(Note 1j)
(Note 1k)
(Note 1l)
13
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
q
q
CA
JA
by the user’s board design.
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3
STMFSC017N15M5
2
NOTES: R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is
CA
q
q
JA
determined by the user’s board design.
a) 38°C/W when mounted on
b) 81°C/W when mounted on
2
2
a 1 in pad of 2 oz copper.
a 1 in pad of 2 oz copper.
2
c) Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper
Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
d)
2
e) Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
f) Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2
g) 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper
h) 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i) 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper
2
j)
k)
l)
200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 294 mJ is based on starting T = 25_C; N-ch: L = 3 mH, I = 14 A, V = 150 V. V = 10 V,
AS
J
AS
DD
GS
100% tested at L = 0.3 mH, I = 31 A.
AS
4. Pulsed Id limited by junction temperature, td <= 10 ms, please refer to SOA curve for more details.
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4
STMFSC017N15M5
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
100
75
50
25
0
5
VGS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 7 V
4
3
2
1
0
VGS = 5.5 V
VGS = 6 V
VGS = 6 V
VGS = 7 V
VGS = 5.5 V
VGS = 5 V
V
GS = 10 V
PULSE DURATION = 80
s
m
DUTY CYCLE = 0.5% MAX
25 50
ID, DRAIN CURRENT (A)
0
1
2
3
4
5
0
75
100
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
60
2.5
2.0
1.5
1.0
0.5
ms
PULSE DURATION = 80
ID = 9.3 A
DUTY CYCLE = 0.5% MAX
VGS = 10 V
50
40
30
20
10
0
ID = 9.3 A
T
J = 125 o
C
TJ = 25 o
C
4
5
6
7
8
9
10
-75 -50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
100
100
PULSE DURATION = 80 s
m
VGS = 0 V
DUTY CYCLE = 0.5% MAX
10
1
75
50
25
0
VDS = 5 V
TJ = 150 oC
T
J = 150 o
C
TJ = 25 o
C
0.1
TJ = 25 oC
TJ = −55oC
0.01
TJ = -55 oC
0.001
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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5
STMFSC017N15M5
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10000
1000
10
8
I
D
= 9.3 A
V
= 50 V
DD
C
iss
V
DD
= 75 V
6
V
DD
= 100 V
100
10
C
oss
4
2
C
rss
f = 1 Mhz
V
= 0 V
GS
1
0
0
7
14
21
28
35
0.1
1
10
100
G , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source
Voltage
60
50
10
45
30
15
T = 25°C
J
V
GS
= 10 V
T = 100°C
J
Limited by Package
V
GS
= 6 V
T = 125°C
J
R
= 1.0°C/W
q
JC
0
1
0.001
0.1
1
10
100
25
50
75
100
125
150
t , TAME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
200
100
1000
SINGLE PULSE
= 81°C/W
R
q
JA
T = 25°C
A
10
1
100
1 ms
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
0.1
100 ms
1 s
10 s
DC
10
1
SINGLE PULSED
T = MAX RATED
J
0.01
R
= 81°C/W
q
JA
CURVE BENT TO
MEASURED DATA
T = 25°C
A
0.001
−3
−2
−1
0
1
0.01
0.1
1
10
100
800
10
10
10
10
10
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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6
STMFSC017N15M5
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
PDM
0.05
0.02
0.01
0.1
t1
t2
NOTES:
0.01
Z
JA(t) = r(t) x R
JA
q
SINGLE PULSE
q
R
qJA = 815C/W
Peak TJ = PDM x Z JA(t) + TA
q
Duty Cycle, D = t1 / t2
0.001
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
POWERTRENCH and DUAL COOL are registered trademarks and SyncFET is a trademark of Semiconductor Components Industries, LLC
(SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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