SZNUP3125WTT1G [ONSEMI]
32V 双线路 CAN 总线保护器,采用 SC-70 (SOT-323) 封装;型号: | SZNUP3125WTT1G |
厂家: | ONSEMI |
描述: | 32V 双线路 CAN 总线保护器,采用 SC-70 (SOT-323) 封装 |
文件: | 总6页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CAN Bus Protector,
Dual Line
NUP3125, SZNUP3125
The SZ/NUP3125 has been designed to protect the CAN transceiver
in 24 V designs from ESD and other harmful surge protection events.
This device provides bidirectional protection for each data line with a
single compact SC−70 (SOT−323) package, giving the system
designer a low cost option for improving system reliability and
meeting stringent EMI requirements.
www.onsemi.com
MARKING
DIAGRAM
Features
• 120 W Peak Power Dissipation per Line (8/20 ms Waveform)
• Diode Capacitance Matching
SC−70
CASE 419
42MG
G
• Low Reverse Leakage Current (< 100 nA)
1
• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 2.0 A (8/20 ms)
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
42
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
PIN 1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN 3
PIN 2
Applications
• Automotive Networks
♦ CAN / CAN−FD
♦ Low and High−Speed CAN
♦ Fault Tolerant CAN
♦ Trucks
CAN_H
CAN_L
CAN
Transceiver
CAN Bus
SZ/NUP3125
• Industrial Control Networks
♦ Smart Distribution Systems (SDS)
♦ DeviceNet
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
July, 2021 − Rev. 2
NUP3125/D
NUP3125, SZNUP3125
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
J
Symbol
Rating
Value
120
Unit
W
P
PK
Peak Power Dissipation, 8/20 ms Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
T
−55 to 150
−55 to 150
260
°C
J
J
L
T
°C
T
Lead Solder Temperature (10 s)
°C
ESD
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 (Contact)
IEC 61000−4−2 (Air)
8.0
1.6
21
kV
21
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Symbol
Parameter
Reverse Working Voltage
Breakdown Voltage
Test Conditions
Min
−
Typ
−
Max
32
Unit
V
V
RWM
(Note 2)
I = 1 mA (Note 3)
V
BR
35.6
−
39
−
−
V
T
I
R
Reverse Leakage Current
Clamping Voltage
V
RWM
= 32 V
100
nA
V
V
C
8/20 ms Waveform (Note 4)
I
PP
I
PP
= 1 A
= 2 A
−
−
47
57
55
60
I
Maximum Peak Pulse Current
Capacitance
8/20 ms Waveform (Note 4)
−
−
−
−
−
2.0
10
A
PP
C
V
V
V
= 0 V, f = 1 MHz (Line to GND)
= 5 V, f = 1 MHz (Line to GND)
= 5 V, f = 1 MHz (Line to GND),
5.7
4.5
5.0
pF
pF
pF
J
R
R
R
6.0
T = 150°C
J
DC
Diode Capacitance Matching
V
R
= 0 V, 5 MHz (Note 5)
−
0.26
2
%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surge protection devices are normally selected according to the working peak reverse voltage (V
than the DC or continuous peak operating voltage level.
), which should be equal or greater
RWM
3. V is measured at pulse test current I .
BR
T
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between C of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
J
table.
ORDERING INFORMATION
†
Device
Package
Shipping
NUP3125WTT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
SZNUP3125WTT1G
NUP3125WTT3G
SC−70
3000 / Tape & Reel
10000 / Tape & Reel
10000 / Tape & Reel
(Pb−Free)
SC−70
(Pb−Free)
SZNUP3125WTT3G
SC−70
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NUP3125, SZNUP3125
TYPICAL PERFORMANCE CURVES
(T = 25°C unless otherwise noted)
J
50
110
100
90
WAVEFORM
PARAMETERS
40
30
20
t = 8 ms
r
80
t = 20 ms
d
25°C
65°C
c−t
70
60
50
t = I /2
d
PP
40
30
20
10
0
−55°C
125°C
10
0
0
5
10
15
t, TIME (ms)
20
25
30
20
30
40
50
ZENER VOLTAGE (V)
Figure 1. Pulse Waveform, 8/20 ms
Figure 2. IV Characteristics
9
8
7
2.5
2.0
1.5
1.0
Pulse Waveform
8 x 20 ms per
Figure 1
65°C
125°C
6
25°C
5
4
3
2
−55°C
0.5
0
0
1
2
3
4
5
30
35
40
45
50
55
60
V , CLAMPING VOLTAGE (V)
C
I , LEAKAGE CURRENT (nA)
L
Figure 4. Clamping Voltage vs. Peak Pulse Current
Figure 3. IR vs Temperature Characteristics
120
100
80
60
40
20
0
−60
−30
0
30
60
90
120
150 180
TEMPERATURE (°C)
Figure 5. Temperature Power Dissipation Derating
www.onsemi.com
3
NUP3125, SZNUP3125
Surge Protection Diode Circuit
breakdown voltage of the diode that is reversed biased, plus
the diode drop of the second diode that is forwarded biased.
Surge protection diodes provide protection to a
transceiver by clamping a surge voltage to a safe level. Surge
protection diodes have high impedance below and low
impedance above their breakdown voltage. A surge
protection Zener diode has its junction optimized to absorb
the high peak energy of a transient event, while a standard
Zener diode is designed and specified to clamp a
steady state voltage.
CAN_H
CAN
Transceiver
CAN Bus
CAN_L
SZ/NUP3125
Figure 6 provides an example of a dual bidirectional surge
protection diode array that can be used for protection with
the high−speed CAN network. The bidirectional array is
created from four identical Zener TVS diodes. The
clamping voltage of the composite device is equal to the
Figure 6. High−Speed and Fault Tolerant CAN Surge
Protection Circuit
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1. BASE
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1. EMITTER
PIN 1. ANODE
PIN 1. CATHODE
2. ANODE
PIN 1. CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC−70 (SOT−323)
PAGE 1 OF 1
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