SZP6SMB36AT3G [ONSEMI]
600 Watt SMB Transient Voltage Suppressor, 36 V, Unidirectional, SMB, 2500-REEL;
| 型号： | SZP6SMB36AT3G |
| 厂家： | 
ONSEMI |
| 描述： | 600 Watt SMB Transient Voltage Suppressor, 36 V, Unidirectional, SMB, 2500-REEL 光电二极管 |
| 文件： | 总7页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P6SMB6.8AT3G Series,
SZP6SMB6.8AT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
http://onsemi.com
Unidirectional*
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8−171 VOLTS
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
600 WATT PEAK POWER
®
SURMETIC package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
SMB
CASE 403A
PLASTIC
Specification Features:
• Working Peak Reverse Voltage Range − 5.8 to 171 V
• Standard Zener Breakdown Voltage Range − 6.8 to 200 V
• Peak Power − 600 W @ 1 ms
Cathode
Anode
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
MARKING DIAGRAM
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
AYWW
xx G
G
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant*
A
Y
= Assembly Location
= Year
Mechanical Characteristics:
WW = Work Week
xx
G
= Device Code (Refer to page 3)
= Pb−Free Package
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
(Note: Microdot may be in either location)
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
ORDERING INFORMATION
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
†
Device
Package
Shipping
P6SMBxxxAT3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
SZP6SMBxxxAT3G
SMB
2,500 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 13
P6SMB6.8AT3/D
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T = 25°C, Pulse Width = 1 ms
Symbol
Value
Unit
P
PK
600
W
L
DC Power Dissipation @ T = 75°C Measured Zero Lead Length (Note 2)
P
3.0
40
25
W
mW/°C
°C/W
L
D
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
R
q
JL
DC Power Dissipation (Note 3) @ T = 25°C
P
0.55
4.4
226
W
mW/°C
°C/W
A
D
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
R
q
JA
Forward Surge Current (Note 4) @ T = 25°C
I
100
A
A
FSM
Operating and Storage Temperature Range
T , T
−65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted, V = 3.5 V Max. @ I
A
F
F
(Note 4) = 30 A, V = 1.3 V Max. @ I (Note 4) = 3 A) (Note 5)
F
F
I
Symbol
Parameter
I
F
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
V
C
PP
V
RWM
Working Peak Reverse Voltage
V
C
V
V
BR RWM
I
Maximum Reverse Leakage Current @ V
R
RWM
V
I
V
F
R
T
I
V
BR
Breakdown Voltage @ I
Test Current
T
I
T
QV
Maximum Temperature Coefficient of V
Forward Current
BR
BR
I
PP
I
F
V
F
Forward Voltage @ I
F
Uni−Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle
http://onsemi.com
2
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
V @ I (Note 8)
C PP
V
RWM
I
R
@
C
typ
V
BR
V (Note 7)
@ I
V
C
I
PP
(Note 6)
V
RWM
(Note 9)
QV
T
BR
Device
Min
Nom
Max
mA
V
mA
V
A
%/°C
pF
Marking
Device*
P6SMB6.8AT3G
P6SMB7.5AT3G
P6SMB8.2AT3G
6V8A
7V5A
8V2A
9V1A
5.8
6.4
7.02
7.78
1000
500
200
50
6.45
7.13
7.79
8.65
6.8
7.51
8.2
7.14
7.88
8.61
9.55
10
10
10
1
10.5
11.3
12.1
13.4
57
53
50
45
0.057
0.061
0.065
0.068
2380
2180
2015
1835
P6SMB9.1AT3G
9.1
P6SMB10AT3G
P6SMB12AT3G
P6SMB13AT3G
10A
12A
13A
8.55
10.2
11.1
10
5
5
9.5
11.4
12.4
10
12
13.05
10.5
12.6
13.7
1
1
1
14.5
16.7
18.2
41
36
33
0.073
0.078
0.081
1690
1435
1335
P6SMB15AT3G
P6SMB16AT3G
P6SMB18AT3G
P6SMB20AT3G
15A
16A
18A
20A
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15.05
16
18
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
28
27
24
22
0.084
0.086
0.088
0.09
1175
1110
1000
910
20
P6SMB22AT3G
P6SMB24AT3G
P6SMB27AT3G
P6SMB30AT3G
22A
24A
27A
30A
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27.05
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
20
18
16
0.092
0.094
0.096
0.097
835
775
700
635
14.4
P6SMB33AT3G
33A
36A
39A
43A
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33.05
36
39.05
43.05
34.7
37.8
41
1
1
1
1
45.7
49.9
53.9
59.3
13.2
12
11.2
10.1
0.098
0.099
0.1
585
540
500
460
P6SMB36AT3G
P6SMB39AT3G
P6SMB43AT3G
45.2
0.101
P6SMB47AT3G
P6SMB51AT3G
P6SMB56AT3G
47A
51A
56A
62A
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47.05
51.05
56
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
9.3
8.6
7.8
7.1
0.101
0.102
0.103
0.104
425
395
365
335
P6SMB62AT3G
62
85
P6SMB68AT3G
P6SMB75AT3G
P6SMB82AT3G
P6SMB91AT3G
68A
75A
82A
91A
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75.05
82
71.4
78.8
86.1
95.5
1
1
1
1
92
6.5
5.8
5.3
4.8
0.104
0.105
0.105
0.106
305
280
260
235
103
113
125
91
P6SMB100AT3G
P6SMB110AT3G
P6SMB120AT3G
P6SMB130AT3G
100A
110A
120A
130A
85.5
94
102
111
5
5
5
5
95
100
110.5
120
105
116
126
137
1
1
1
1
137
152
165
179
4.4
4.0
3.6
3.3
0.106
0.107
0.107
0.107
215
200
185
170
105
114
124
130.5
P6SMB150AT3G
P6SMB160AT3G
P6SMB180AT3G
150A
160A
180A
128
136
154
5
5
5
143
152
171
150.5
160
180
158
168
189
1
1
1
207
219
246
2.9
2.7
2.4
0.108
0.108
0.108
150
140
130
P6SMB200AT3G
200A
171
5
190
200
210
1
274
2.2
0.108
115
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
the DC or continuous peak operating voltage level.
), which should be equal to or greater than
RWM
7. V measured at pulse test current I at an ambient temperature of 25°C.
BR
T
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias Voltage = 0 V, F = 1 MHz, T = 25°C
J
* Include SZ-prefix devices where applicable.
http://onsemi.com
3
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
100
10
PULSE WIDTH (t ) IS DEFINED AS
P
THAT POINT WHERE THE PEAK
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
t ≤ 10 ms
rꢀ
CURRENT DECAYS TO 50% OF
I .
PP
100
50
0
PEAK VALUE - I
PP
I
PP
2
HALF VALUE -
1
t
P
0.1
0.1 ms
1 ms
10 ms
100 ms
1 ms
10 ms
0
1
2
3
4
5
t, TIME (ms)
t , PULSE WIDTH
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
10,000
1000
160
140
120
P6SMB6.8AT3G
P6SMB18AT3G
100
80
P6SMB51AT3G
100
10
1
60
P6SMB200AT3G
40
20
0
T = 25°C
J
f = 1 MHz
0
25
50
75
100
125
150
1
10
100
1000
T , AMBIENT TEMPERATURE (°C)
A
BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
http://onsemi.com
4
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
APPLICATION NOTES
Response Time
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V
in
(TRANSIENT)
V
L
V
L
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
Figure 6.
1
0.7
0.5
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
1 ms
0.03
0.02
100 ms
10 ms
10 20
D, DUTY CYCLE (%)
0.01
0.1 0.2
0.5
1
2
5
50 100
Figure 7. Typical Derating Factor for Duty Cycle
http://onsemi.com
5
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
UL RECOGNITION
The entire series has Underwriters Laboratory
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Recognition for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
http://onsemi.com
6
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
H
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
NOM
2.30
0.10
2.03
0.23
3.56
4.32
5.44
1.02
MAX
MIN
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
2.47
0.20
2.20
0.31
3.95
4.60
5.60
1.60
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
0.51 REF
0.020 REF
A
SOLDERING FOOTPRINT*
A1
c
L
L1
2.261
0.089
2.743
0.108
2.159
0.085
mm
inches
ǒ
Ǔ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
P6SMB6.8AT3/D
相关型号：
SZP6SMB36CAT3G
Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
SZP6SMB36CAT3G
600 Watt SMB Transient Voltage Suppressor, 36 V, Bidirectional, SMB, 2500-REELWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI
SZP6SMB39AT3G
Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Unidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
SZP6SMB39CAT3G
Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
SZP6SMB39CAT3G
600 Watt SMB Transient Voltage Suppressor, 39 V, Bidirectional 600 Watt SMB Transient Voltage Suppressor, 39 V, Bidirectional, SMB, 2500-REELWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI
SZP6SMB43AT3G
Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
SZP6SMB43CAT3G
Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
SZP6SMB47AT3G
Trans Voltage Suppressor Diode, 600W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
SZP6SMB47AT3G
600 Watt SMB Transient Voltage Suppressors 47 V Unidirectional, SMB, 2500-REELWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI
SZP6SMB51AT3G
Trans Voltage Suppressor Diode, 600W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
SZP6SMB51AT3G
600 Watt SMB Transient Voltage Suppressor, 51 V, Unidirectional, SMB, 2500-REELWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ONSEMI
SZP6SMB56AT3G
Trans Voltage Suppressor Diode, 600W, 47.8V V(RWM), Unidirectional, 1 Element, Silicon, SMB, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明