TF252C [ONSEMI]
TRANSISTOR,JFET,N-CHANNEL,140UA I(DSS),EMD3VAR;![TF252C](http://pdffile.icpdf.com/pdf2/p00243/img/icpdf/TF252C-5_1472023_icpdf.jpg)
型号: | TF252C |
厂家: | ![]() |
描述: | TRANSISTOR,JFET,N-CHANNEL,140UA I(DSS),EMD3VAR |
文件: | 总4页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
Ordering number : ENA0897
SANYO Sem iconductors
DATA S HEET
N-channel Silicon Junction FET
TF252C
Electret Condenser Microphone
Applications
Features
• High gain : G =1.0dB typ (V =2V, R =2.2kΩ, Cin=5pF, V =10mV, f=1kHz).
CC IN
V
L
• Ultrasmall package facilitates miniaturization in end products.
• Best suited for use in Electret Condenser Microphone for audio equipments and telephones.
• Excellent voltage characteristics.
• Excellent transient characteristics.
• Adoption of FBET process.
• Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Symbol
Conditions
Ratings
Unit
V
V
GDO
--20
10
Gate Current
I
G
mA
mA
mW
°C
Drain Current
I
1
D
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Marking: D
P
100
150
D
Tj
Tstg
--55 to +150
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80107GB TI IM TC-00000786
No. A0897-1/4
TF252C
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--20
max
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
V
I
=--100µA
V
V
(BR)GDO
(off)
G
V
V
V
V
V
V
=2V, I =1µA
--0.1
140*
0.8
--0.4
--1.0
GS
DS
DS
DS
DS
DS
D
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
I
=2V, V =0V
GS
350*
µA
mS
pF
pF
DSS
yfs
=2V, V =0V, f=1kHz
GS
1.4
3.1
Ciss
Crss
=2V, V =0V, f=1MHz
GS
Reverse Transfer Capacitance
=2V, V =0V, f=1MHz
GS
0.95
[Ta=25°C, V =2V, R =2.2kΩ, Cin=5pF, See specified Test Circuit.]
CC
L
Voltage Gain
G
V
V
=10mV, f=1kHz
1.0
dB
dB
dB
%
V
IN
IN
Reduced Voltage Characteristic
Frequency Characteristic
Total Harmonic Distortion
Output Noise Voltage
∆G
VV
=10mV, f=1kHz, V =2.0→1.5V
CC
--0.6
--2.0
--1.0
∆Gvf
f=1kHz to 110Hz
THD
V
V
=30mV, f=1kHz
=0V, A curve
0.65
--106
IN
V
--102
dB
NO
IN
* : The TF252C is classified by I
as follows : (unit : µA)
DSS
Rank
4
5
I
140 to 240
210 to 350
DSS
Package Dimensions
unit : mm (typ)
Test Circuit
7048-001
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Top View
1.2
3
0.11
2.2kΩ
V
V
=2.0V
=1.5V
CC
CC
0 to 0.02
33µF
5pF
+
1
2
0.2
V
THD
VTVM
0.4
OSC
1
2
1 : Drain
2 : Source
3 : Gate
3
Bottom View
SANYO : TSSFP
I
-- V
I
-- V
DS
D
DS
D
300
250
200
150
100
350
300
250
200
150
100
50
0
50
0
--0.30V
--0.4V
0
0.5
1.0
1.5
2.0
IT12440
0
1
2
3
4
5
Drain-to-Source Voltage, V
DS
-- V
Drain-to-Source Voltage, V
DS
-- V
IT12441
No. A0897-2/4
TF252C
I
-- V
I
-- V
GS
D
GS
D
400
350
300
250
200
150
100
400
350
300
250
200
150
100
V =2V
DS
V =2V
DS
50
0
50
0
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
IT12443
Gate-to-Source Voltage, V
GS
-- V
IT12442
Gate-to-Source Voltage, V
-- V
GS
yfs -- I
V
(off) -- I
DSS
GS
DSS
--0.60
--0.55
--0.50
--0.45
--0.40
--0.35
--0.30
1.7
1.6
1.5
1.4
1.3
1.2
V
=2V
=1µA
V
V
=2V
=0V
DS
DS
GS
I
D
f=1kHz
1.1
1.0
--0.25
--0.20
100
150
200
250
300
350
400
100
150
200
250
300
350
400
Zero-Gate Voltage Drain Current, I
DSS
-- µA IT12444
Zero-Gate Voltage Drain Current, I
DSS
-- µA IT12445
Ciss -- V
Crss -- V
DS
DS
10
3
2
V =0V
GS
V =0V
GS
f=1MHz
f=1MHz
7
5
1.0
3
2
7
5
1.0
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
1.0
10
1.0
10
IT12446
IT12447
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V -- V
DS
DS
G
-- I
∆G
-- I
VV DSS
V
DSS
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
G
I
: V =2V
CC
IN
f=1kHz
∆G
: V =2V→1.5V
VV CC
=10mV
V
V
=10mV
V
IN
f=1kHz
R =2.2kΩ
R =2.2kΩ
L
L
Cin=5pF
Cin=5pF
: V =2V
DSS DS
I : V =2V
DSS DS
--0.9
--1.0
--0.2
--0.4
100
150
200
250
300
350
400
IT12448
100
150
200
250
300
350
400
Zero-Gate Voltage Drain Current, I
DSS
-- µA IT12449
Zero-Gate Voltage Drain Current, I
DSS
-- µA
No. A0897-3/4
TF252C
THD -- V
THD -- I
DSS
IN
2
1.4
1.2
1.0
0.8
0.6
0.4
THD : V =2V
CC
THD : V =2V
CC
f=1kHz
V
=30mV
IN
10
R =2.2kΩ
f=1kHz
L
7
5
Cin=5pF
R =2.2kΩ
L
I : V =2V
DSS DS
Cin=5pF
I
: V =2V
3
2
DSS DS
1.0
7
5
3
2
0.2
0
0.1
0
50
100
150
200
IT12450
100
150
200
250
300
350
400
Input Voltage, V
-- mV
Zero-Gate Voltage Drain Current, I
-- µA IT12451
DSS
IN
P
-- Ta
D
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT12453
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0897-4/4
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00243/img/page/TF252C-5_1472023_files/TF252C-5_1472023_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00243/img/page/TF252C-5_1472023_files/TF252C-5_1472023_2.jpg)
TF252C-4
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, ULTRA SMALL, TSSFP, 3 PIN
ONSEMI
![](http://pdffile.icpdf.com/pdf2/p00243/img/page/TF252TH-4-TL_1472024_files/TF252TH-4-TL_1472024_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00243/img/page/TF252TH-4-TL_1472024_files/TF252TH-4-TL_1472024_2.jpg)
TF252TH-4-TL-H
N-Channel JFET, 20V, 140 to 350µA, 1.4mS, VTFP IDSS = 140 to 240 �A, SOT-623 / VTFP, 8000-REEL
ONSEMI
©2020 ICPDF网 联系我们和版权申明