TIP147T [ONSEMI]
PNP外延硅达林顿晶体管;
| 型号： | TIP147T |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅达林顿晶体管 局域网 放大器 晶体管 达林顿晶体管 |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by TIP140/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose amplifier and low frequency switching applications.
•
•
High DC Current Gain — Min h
FE
= 1000 @ I = 5 A, V
Collector–Emitter Sustaining Voltage — @ 30 mA
= 4 V
CE
C
V
V
V
= 60 Vdc (Min) — TIP140, TIP145
= 80 Vdc (Min) — TIP141, TIP146
= 100 Vdc (Min) — TIP142, TIP147
CEO(sus)
CEO(sus)
CEO(sus)
•
Monolithic Construction with Built–In Base–Emitter Shunt Resistor
MAXIMUM RATINGS
*Motorola Preferred Device
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–100 VOLTS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
60
60
80
80
100
100
V
CB
EB
V
5.0
125 WATTS
Collector Current — Continuous
Peak (1)
I
C
10
15
Base Current — Continuous
Total Device Dissipation
@ T = 25 C
C
I
0.5
Adc
B
P
125
Watts
D
Operating and Storage Junction
Temperature Range
T , T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Ambient
R
1.0
θJC
θJA
R
35.7
CASE 340D–02
(1) 5 ms,
10% Duty Cycle.
DARLINGTON SCHEMATICS
NPN
PNP
COLLECTOR
COLLECTOR
TIP140
TIP141
TIP142
TIP145
TIP146
TIP147
BASE
BASE
≈
8.0 k
≈
40
≈
8.0 k
≈ 40
EMITTER
EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
V
Vdc
CEO(sus)
(I = 30 mA, I = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
60
80
100
—
—
—
—
—
—
C
B
Collector Cutoff Current
I
mA
mA
CEO
CBO
(V
CE
(V
CE
(V
CE
= 30 Vdc, I = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
—
—
—
—
—
—
2.0
2.0
2.0
B
= 40 Vdc, I = 0)
B
= 50 Vdc, I = 0)
B
Collector Cutoff Current
I
(V
CB
(V
CB
(V
CB
= 60 V, I = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
—
—
—
—
—
—
1.0
1.0
1.0
E
= 80 V, I = 0)
E
= 100 V, I = 0)
E
Emitter Cutoff Current (V
= 5.0 V)
I
—
—
2 0
mA
—
BE
EBO
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 5.0 A, V
(I = 10 A, V
C
= 4.0 V)
CE
= 4.0 V)
CE
1000
500
—
—
—
—
C
Collector–Emitter Saturation Voltage
(I = 5.0 A, I = 10 mA)
V
Vdc
CE(sat)
—
—
—
—
2.0
3.0
C
B
(I = 10 A, I = 40 mA)
C
B
Base–Emitter Saturation Voltage
(I = 10 A, I = 40 mA)
V
—
—
3.5
Vdc
Vdc
BE(sat)
C
B
Base–Emitter On Voltage
(I = 10 A, V = 4.0 Vdc)
V
BE(on)
—
—
3.0
C
CE
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
t
t
—
—
—
—
0.15
0.55
2.5
—
—
—
—
µs
µs
µs
µs
d
(V
CC
= 30 V, I = 5.0 A,
C
Rise Time
Storage Time
Fall Time
t
r
I
I
= 20 mA, Duty Cycle
2.0%,
B
s
= I , R & R Varied, T = 25 C)
B1 B2
C
B
J
t
2.5
f
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2.0%.
10
V
CC
– 30 V
PNP
NPN
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
5.0
D , MUST BE FAST RECOVERY TYPE, eg:
1
1N5825 USED ABOVE I
≈
100 mA
100 mA
t
B
s
R
C
SCOPE
MSD6100 USED BELOW I
≈
B
TUT
2.0
1.0
0.5
t
V
f
2
R
B
approx
+12 V
D
1
≈
8.0 k
51
≈
40
t
r
0
V
1
+ 4.0 V
V
= 30 V
appox.
– 8.0 V
t
@ V
= 0
BE(off)
CC
d
I
I
/I = 250
25 µs
C B
B1 B2
0.2
0.1
for t and t , D1 is disconnected
d
r
= I
and V = 0
2
t , t
≤ 10 ns
T
= 25°C
r
f
J
DUTY CYCLE = 1.0%
0.2
0.5
1.0
3.0
5.0
10
20
For NPN test circuit reverse diode and voltage polarities.
I
, COLLECTOR CURRENT (AMP)
C
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
NPN
PNP
TIP140, TIP141, TIP142
TIP145, TIP146, TIP147
20,000
T
= 150°C
J
5000
T
= 150°C
J
100°C
100°C
10,000
7000
25°C
25°C
2000
1000
5000
–55°C
–55°C
3000
2000
500
300
V
= 4.0 V
2.0
CE
V
= 4.0 V
CE
1000
0.5
1.0
3.0
4.0 5.0
7.0
10
0.5
0.7
1.0
2.0
I , COLLECTOR CURRENT (AMPS)
C
3.0
4.0 5.0
7.0
10
175
175
I
, COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain versus Collector Current
5.0
5.0
3.0
2.0
3.0
2.0
I
= 10 A, I = 4.0 mA
B
C
I
= 10 A, I = 4.0 mA
B
C
I
= 5.0 A, I = 10 mA
B
I
I
= 5.0 A, I = 10 mA
B
C
C
1.0
1.0
= 1.0 A, I = 2.0 mA
C
B
I
= 1.0 A, I = 2.0 mA
B
C
0.7
0.5
0.7
0.5
–75 –50 –25
0
25
50
75
100
125 150
–75 –50 –25
0
25
50
75
100
125 150
175
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 4. Collector–Emitter Saturation Voltage
4.0
4.0
3.6
3.2
2.8
2.4
2.0
1.6
3.6
3.2
2.8
2.4
2.0
1.6
V
= 4.0 V
V
= 4.0 V
= 10 A
CE
CE
I
C
I
= 10 A
C
5.0 A
1.0 A
5.0 A
1.0 A
1.2
0.8
1.2
0.8
–75
–25
25
75
125
175
–75
–25
25
75
125
T , JUNCTION TEMPERATURE (
°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 5. Base–Emitter Voltage
3
Motorola Bipolar Power Transistor Device Data
ACTIVE–REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I – V limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on T
= 150 C; T is
J(pk) C
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
C
CE
20
15
10
10
7.0
5.0
7.0
3.0
2.0
dc
5.0
T
= 150°C
J
100 mJ
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
1.0
THERMAL LIMITATION @ T = 25°C
C
2.0
1.0
TIP140, 145
TIP141, 146
TIP142, 147
0.2
10
15
20
30
50
70
100
0.5
1.0
2.0
5.0
10
20
50
100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
L, UNCLAMPED INDUCTIVE LOAD (mH)
CE
Figure 6. Active–Region Safe Operating Area
Figure 7. Unclamped Inductive Load
w
≈
7.0 ms (SEE NOTE 1)
5.0 V
V
MONITOR
CE
INPUT
VOLTAGE
0
MPS–U52
COLLECTOR
CURRENT
100 ms
100 mH
R
BB1
0
TUT
50
1.5 k
INPUT
V
= 20 V
1.42 A
CC
I
50
C
R
= 100
BB2
V
CE(sat)
–20 V
MONITOR
V
= 0
= 10 V
BB2
COLLECTOR
VOLTAGE
R
= 0.1
V
S
BB1
V
(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until I
NOTE 2: For NPN test circuit reverse polarities.
= 1.42 A.
VOLTAGE AND CURRENT WAVEFORMS
CM
Figure 8. Inductive Load
100
70
5.0
V
= 10 V
CE
= 1.0 A
I
T
C
50
= 25°C
4.0
3.0
2.0
J
PNP
PNP
NPN
20
10
7.0
NPN
5.0
1.0
0
2.0
1.0
1.0
2.0
3.0
5.0
7.0
10
0
40
80
120
160
200
f, FREQUENCY (MHz)
T , FREE–AIR TEMPERATURE (°C)
A
Figure 9. Magnitude of Common Emitter
Small–Signal Short–Circuit Forward
Current Transfer Ratio
Figure 10. Free–Air Temperature
Power Derating
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Q
B
E
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
U
MILLIMETERS
INCHES
MIN
4
DIM
A
B
C
D
E
G
H
J
MIN
–––
MAX
20.35
15.20
4.90
1.30
1.37
5.55
3.00
0.78
MAX
0.801
0.598
0.193
0.051
0.054
0.219
0.118
0.031
A
–––
0.579
0.185
0.043
0.046
0.213
0.079
0.020
L
S
14.70
4.70
1.10
1.17
5.40
2.00
0.50
1
2
3
K
K
L
Q
S
31.00 REF
1.220 REF
–––
4.00
16.20
4.10
–––
0.158
0.701
0.638
0.161
0.717
17.80
18.20
J
H
U
V
4.00 REF
1.75 REF
0.157 REF
0.069
D
V
G
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 340D–02
ISSUE B
5
Motorola Bipolar Power Transistor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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TIP140/D
◊
相关型号：
TIP147TLEADFREE
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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