TPS2399DMT7G [ONSEMI]

热插拔控制器,带启用,-48 V;
TPS2399DMT7G
型号: TPS2399DMT7G
厂家: ONSEMI    ONSEMI
描述:

热插拔控制器,带启用,-48 V

控制器 开关 光电二极管
文件: 总15页 (文件大小:660K)
中文:  中文翻译
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TPS2398, TPS2399  
-48 V Hot Swap Controller  
for Redundant Supply  
Systems  
The TPS2398 and TPS2399 integrated circuits are hot swap power  
managers optimized for use in nominal 48 V systems. They  
incorporate an improved circuit breaker response that provides rapid  
protection from short circuits, while still enabling plugins to tolerate  
large transients that can be generated by the sudden switchover to a  
higher voltage supply. They are designed for supply voltage ranges up  
to 80 V, and are rated to withstand spikes to 100 V. In conjunction  
with an external Nchannel FET and sense resistor, they can be used to  
enable live insertion of plugin cards and modules in power
systems. Both devices provide load current slew rate and eak  
magnitude limiting, easily programmed by sense resistor valand a  
single external capacitor.  
www.onsemi.com  
MSOP8  
Z SUFFIX  
CASE 846AD  
PIN CONNECTIONS AND  
MARKING DIAGRAM  
Features  
1
Wide Input Supply: 36 V to 80 V  
Transient Rating to 100 V  
Improved Transient Response  
Εnable Input (EN)  
RTN  
PG  
EN  
FLTTIME  
IRAMP  
GATE  
ISENS  
VIN  
Programmable Current Limit  
Programmable Current Slew Re  
Fault Timer to Eliminate Nuisance Trips  
OpenDrain Power Gout (PG
MSOP8 Package  
(Top View)  
239x  
= Specific Device Code  
x = 8 or 9  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
A
Y
W
G
These are PbFreDevice
(Note: Microdot may be in either location)  
Typical Applic
48 V DistribSystems  
Redundant NegatiVoltage Supplies  
Central Office Switching Systems  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 15 of  
this data sheet.  
DC/DC  
48V  
RTN  
VIN+  
VOUT+  
VOUT+  
C3  
1V  
100 mF  
R3  
33 kW  
C4  
EN  
R2  
100 kW  
VIN−  
VOUT−  
VOUT−  
TPS2398/99  
1
2
3
4
8
7
6
5
RTN  
PG  
EN  
Q1  
NTD6414AN  
GATE  
FLTTIME ISENS  
IRAMP VIN  
C1  
47 nF  
R1  
0.02 W  
48V  
INA  
C2  
3.9 nF  
48V  
INB  
Figure 1. Application Diagram  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
August, 2017 Rev. 0  
TPS2398/D  
TPS2398, TPS2399  
48V  
RTN  
VOUT+  
RTN  
REG  
VDDs  
8
2
R3  
R1  
100 kW  
30 V  
Enabled  
1.4 V  
EN  
PG  
1
Priority:  
R
Logic  
GateHi  
SET  
S
Q
Q
C3  
100 V  
100 mF  
RampHi  
Fault  
Enabled  
Logic  
CLR  
R
Enabled  
10 uA  
0.6 uA  
OL  
IRAMP  
7.5V  
OC  
4
Slow/Fast  
RaHi  
GateHi  
0.5 V  
RSE  
99 R  
Overcurrent  
comparator  
4.5 V  
VOUT−  
Linear current  
amplifier (LCA)  
R
40mV  
Q1  
NTD6414  
GATE  
7
6
Faul
EN  
C1  
47 nF  
Enabled  
OC  
RSE  
Slow/Fast  
Fault  
Enabled  
50 uA  
ISNS  
.0 V  
.5 V  
SET  
CLR  
S
R
Q
Q
FLTTIME  
Fault  
3
OL  
4us  
0.4 uA  
R1  
0.02 W  
100mV  
C2  
3.9 nF  
Overload  
comparator  
VIN  
5
TPS2398 Log0  
TPS2399 Log1  
Enabled  
48V  
IN  
Figure 2. Internal Block Diagram  
Table 1. PIN FUNCTION DESCRIPTIN  
Pin Number  
Pin Name  
EN  
Description  
Enble input to turn on/off power to the load  
2
1
3
7
4
6
8
5
PG  
Opendrain, activelow indication of a load power good condition.  
Connection for userprogramming of the fault timeout period.  
Gate drive for external Nchannel FET  
FLTTIME  
GATE  
IRAMP  
ISENS  
RTN  
Programming input for setting the inrush current slew rate.  
Current sense input.  
Positive supply input for the TPS2398 and TPS2399.  
VIN  
Negative supply input and reference pin for the TPS2398 and TPS2399.  
www.onsemi.com  
2
TPS2398, TPS2399  
Table 2. ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
0.3 to 15  
0.3 to 100  
0.3 to 100  
0.3 to 100  
10  
Unit  
V
Input voltage range, all pins except RTN, EN, PG (Note 1)  
Input voltage range, RTN (Note 1)  
RTN  
EN  
V
Input voltage range, EN (Notes 1, 2)  
Output voltage range, PG (Notes 1, 3)  
Continuous output current, PG  
V
PG  
V
I
mA  
mW  
°C  
°C  
°C  
kV  
kV  
PG  
Continuous total power dissipation, T < 25  
P
420  
A
D(MAX)  
Operating junction temperature range  
T
40 to 125  
55 to 150  
260  
J(MAX)  
Storage temperature range  
T
T
STG  
Lead temperature soldering 1.6 mm (1/16 inch) from case for 10 seconds  
Human Body Model (HBM) (Note 4)  
OL  
D  
ESD  
2.0  
HM  
Charged Device Model (CDM) (Note 4)  
1.5  
M  
Stresses exceeding those listed in the Maximum Ratings table may damage tdee. If any of hese limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INORMATION foafe Operating Area.  
2. With 100kW minimum input series resistance, 0.3 V to 15 V witow imedance.  
3. With 10kW minimum input series resistance, 0.3 V to 80 V with w ipedance.  
4. All pins except RTN pin which is specified up to 1.0 kV.  
Table 3. RECOMMENDED OPERATING CONDITINS  
Rating  
Min  
80  
40  
Nom  
Max  
36  
85  
Unit  
V
Nominal input supply, VIN to RTN  
Operating ambient temperature  
°C  
Functional operation above the stresses tein the ended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges mits may affect device reliability.  
Table 4. DISSIPATION RATING TABLE  
Package  
T
< 255C  
Deratig Factor  
T
< 855C  
A
A
MSOP8  
420 mW  
4.3 mW/°C  
160 mW  
Table 5. ELECHARCTERISTICS  
V
= 48 V RTN, V  
= 2.8 V, V  
= 0 V, all outputs unloaded, device not in fault mode, T = 25°C; unless  
I(VIN)  
I(EN)  
I(ISENS) J  
otherwise noted. Max specifications are guaranteed at 40°C T 85°C. (Notes 5, 6)  
J
Param
INPUT SUPPLY  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Supply current, RTN  
V
V
= 48 V  
= 80 V  
I
310  
310  
30  
2.3  
450  
450  
25  
3.0  
mA  
mA  
V
I(RTN)  
CC  
I(RT
UVLO threshold, input voltage rising  
UVLO hysteresis  
To GATE pullup, referenced to RTN  
V
36  
UVLO_L  
V
HYS  
1.8  
V
ENABLE INPUT (EN)  
Threshold voltage, input voltage rising  
EN hysteresis  
To GATE pullup  
V
1.25 1.35  
1.5  
90  
2
V
TH  
V
20  
40  
1
mV  
mA  
HYS_EN  
Highlevel input current  
LINEAR CURRENT AMPLIFIER (LCA)  
Highlevel output, GATE  
Output sink current  
V
I(EN)  
= 5 V  
I
IH  
2  
V
V
= 0 V  
V
OH  
11  
50  
1  
14  
17  
1
V
I(ISENS)  
= 80 mV, V  
= 5 V, Fault mode  
I
100  
mA  
mA  
I(ISENS)  
O(GATE)  
SINK  
Input current, ISENS  
0 V < V  
< 0.2 V  
I
I
I(ISENS)  
5. All voltages are with respect to the VIN terminal unless otherwise stated.  
6. Currents are positive into and negative out of the specified terminal.  
www.onsemi.com  
3
 
TPS2398, TPS2399  
Table 5. ELECTRICAL CHARACTERISTICS  
V
= 48 V with respect to RTN, V  
= 2.8 V, V  
= 0 V, all outputs unloaded, device not in fault mode, T = 25°C; unless  
I(VIN)  
I(EN)  
I(ISENS) J  
otherwise noted. The Min and Max specifications are guaranteed at 40°C T 85°C. (Notes 5, 6)  
J
Parameter  
LINEAR CURRENT AMPLIFIER (LCA)  
Reference clamp voltage  
Test Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
V
V
= open  
V
REF_K  
33  
40  
46  
6
mV  
mV  
O(IRAMP)  
Input offset voltage  
= 2 V  
V
IO  
7  
O(IRAMP)  
RAMP GENERATOR  
IRAMP source current, slow turnon rate  
IRAMP source current, normal rate  
Lowlevel output voltage  
V
V
V
V
= 0.25 V  
I
I
850 600 400  
nA  
mA  
O(IRAMP)  
SRC1  
= 1 V, 3 V  
11  
10  
9  
5
O(IRAMP)  
SRC2  
= 0 V  
V
OL  
mV  
I(EN)  
Voltage gain, relative to ISENS  
OVERLOAD COMPARATOR  
Current overload threshold, ISENS  
Glitch filter delay time  
= 1 V, 3 V  
A
V
9.5  
10  
10.5  
mV/V  
O(IRAMP)  
TH_OL  
80  
2
100  
4
120  
7
mV  
V
= 200 mV  
t
ms  
I(ISENS)  
DLY  
FAULT TIMER  
Lowlevel output voltage  
V
V
= 0 V  
V
5
mV  
mA  
V
I(EN)  
OL  
Charging current, current limit mode  
Fault threshold voltage  
= 80 mV, V  
= 2
I
CHG  
55  
50  
45  
4.25  
I(ISENS)  
O(FLTE)  
O(FLTTE)  
V
FLT  
3.75  
4.0  
Discharge current, retry mode (TPS2399)  
Output duty cycle (TPS2399)  
Discharge current, timer reset mode  
PG OUTPUT  
V
V
V
= 80 mV  
= 2 V, Fault Mode  
I
0.38 0.75  
mA  
%
I(ISENS)  
DSG  
D
0.8  
1
1.5  
I
mA  
O(
R
Highlevel output (leakage) current  
Driver ON resistance  
= 0 V, V  
= 65 V  
I
10  
80  
mA  
O(PG)  
OH  
I
1 mA  
R
35  
W
O(PG
DS(ON)  
5. All voltages are with respe VIN inal unless otherwise staed.  
6. Currents are positive ine out of the specified terminal.  
Product parametric performanted in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may noicatee Electrical Charteristics if operated under different conditions.  
www.onsemi.com  
4
 
TPS2398, TPS2399  
TYPICAL CHARACTERISTICS  
V
I(VIN)  
= 48 V with respect to RTN, V  
= 2.8 V, V = 0 V, all outputs unloaded, device not in fault mode, T = 25°C  
I(ISENS) J  
I(EN)  
V
EN  
(20 V/div)  
V
EN  
(20 V/div)  
V
DRAIN  
(20 V/div)  
V
DRAIN  
(50 V/div)  
I
RTN  
C
C
C
= 3.9 nF  
= 100 nF  
= 50 mF  
C
C
C
= 3.9 nF  
= 100 nF  
= 100 mF  
IRAMP  
IRAMP  
FLTTM  
(500 mA/div)  
FLTTM  
OUT  
OUT  
I
RTN  
(500 mA/div)  
1 ms/div  
1 ms/div  
Figure 3. Live Insertion Event, VIN = 48 V  
Figure 4ive Insertion Event, VIN = 80 V  
C
C
= 47 nF  
= 330 mF  
C
= 3.9 nF  
C
= 47 nF  
IRAMP  
FLTTM  
IRAMP  
V
EN  
(5 V/div)  
C
22 nF  
OUT  
IRAM
V
DRAIN  
(50 V/)  
V
IRP  
(2 V/div)  
C
= 100 mF  
OUT  
V
I
iv)  
I
RTN  
(500 mAiv)  
I
(500 mA/div)  
RTN  
10 ms/div  
Figurup frm Enable, VIN = 80 V  
Figure 6. Output Current Ramp Profiles  
V
/PG  
(50 V/div)  
V
/PG  
(50 V/div)  
C
C
= 3.9 nF  
= 47 nF  
C
C
= 3.9 nF  
= 47 nF  
IRAMP  
FLTTM  
IRAMP  
FLTTM  
V
V
IRAMP  
IRAMP  
(2 V/div)  
(2 V/div)  
V
FLTTM  
V
FLTTM  
(2 V/div)  
(2 V/div)  
I
I
RTN  
RTN  
(1 A/div)  
(1 A/div)  
1 ms/div  
1 ms/div  
Figure 7. TurnOn into Short (TPS2399 only)  
Figure 8. TurnOn into Short (TPS2398 only)  
www.onsemi.com  
5
 
TPS2398, TPS2399  
TYPICAL CHARACTERISTICS  
V
I(VIN)  
= 48 V with respect to RTN, V  
= 2.8 V, V  
= 0 V, all outputs unloaded, device not in fault mode, T = 25°C  
I(EN)  
I(ISENS)  
J
V
/PG  
(50 V/div)  
V
/PG  
(50 V/div)  
V
FLTTM  
V
FLTTM  
(2 V/div)  
(2 V/div)  
V
DRAIN  
C
C
C
R
= 3.9 nF  
= 47 nF  
= 100 mF  
= 12.5 W  
V
IRAMP  
FLTTM  
C
C
C
R
= 3.9 nF  
= 47 nF  
= 100 mF  
(20 V/div)  
DRAIN  
IRAMP  
FLTTM  
(20 V/div)  
OUT  
LOAD  
OUT  
I
I
RTN  
RTN  
= 12.5 W (unconnected)  
LOAD  
(1 A/div)  
(1 A/div)  
50 ms/div  
50 ms/div  
Figure 9. FaultRetry Operation  
Fig10. Recovery from a Fault  
(TPS2399 only)  
(TPS2399 only)  
V
/PG  
C
C
C
= 3.9 nF  
= 100 nF  
= 100 mF  
IRAMP  
FLTTM  
V
IRAMP  
(2 V/div)  
(50 V/div)  
OUT  
V
FLT
V/div
V
DRAIN  
(20 V/div)  
AIN  
C
C
C
= 3.9 nF  
= 47 nF  
= 100 mF  
IRAMP  
FLTTM  
(20 V/div)  
OUT  
I
RTN  
V
/PG  
(50 V/div)  
(1 A/div)  
1 ms/div  
Figure ery fom a Fault Expande
Figure 12. PG Ouput Timing Voltage  
(TPS2399 only)  
Qualified  
1200  
1000  
800  
C
C
C
= 3.9 nF  
= 100 nF  
= 100 mF  
IRAMP  
FLTTM  
.5 V  
OUT  
V
IRAMP  
(2 V/div)  
V
V
= 80 V  
= 48 V  
600  
RTN  
V
(20 V/div)  
DRAIN  
400  
200  
0
V
(50 V/div)  
/PG  
RTN  
40  
20  
0
20  
40  
60  
80  
1 ms/div  
TEMPERATURE (°C)  
Figure 13. PG Ouput Timing Current  
Figure 14. Supply Current  
Qualified  
www.onsemi.com  
6
TPS2398, TPS2399  
TYPICAL CHARACTERISTICS  
V
I(VIN)  
= 48 V with respect to RTN, V  
= 2.8 V, V  
= 0 V, all outputs unloaded, device not in fault mode, T = 25°C  
I(EN)  
I(ISENS)  
J
15.0  
45  
43  
41  
39  
37  
14.8  
14.6  
14.4  
14.2  
14.0  
13.8  
13.6  
13.4  
35  
33  
13.2  
13.0  
40 20  
0
20  
40  
60  
80  
100 120  
40 20  
0
0  
40  
60  
80  
100 120  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 15. GATE High Output Voltage  
Figure 16. Reference Clamp Voltage  
0.55  
0.60  
0.65  
9.5  
9.
Average for V  
= 1 V, 3 V  
I(IRAMP)  
9.7  
9.8  
9.9  
10.0  
10.1  
10.2  
0.70  
0.75  
10.3  
10.4  
10.5  
40 20  
0
20  
60  
80  
100 120  
40 20  
0
20  
40  
60  
80  
100 120  
MPERTURE (°C)  
TEMPERATURE (°C)  
Figure Output Current Slow Rate  
Figure 18. IRAMP Output Current Fast Rate  
10.5  
10.4  
10.3  
10.2  
10.1  
10.0  
9.9  
120  
115  
110  
105  
100  
95  
9.8  
90  
9.7  
85  
80  
9.6  
9.5  
40  
20  
0
20  
40  
60  
80  
40  
20  
0
20  
40  
60  
80  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 19. Voltage Gain, relative to ISNS  
Figure 20. Current Overload Threshold, ISNS  
www.onsemi.com  
7
TPS2398, TPS2399  
TYPICAL CHARACTERISTICS  
V
I(VIN)  
= 48 V with respect to RTN, V  
= 2.8 V, V  
= 0 V, all outputs unloaded, device not in fault mode, T = 25°C  
I(EN)  
I(ISENS)  
J
7.0  
45  
V
V
= 80 mV  
I(ISENS)  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
V
= 0 to 200 mV  
46  
47  
48  
49  
50  
51  
52  
53  
I(ISENS)  
= 2 V  
O(FLTTIME)  
3.0  
2.5  
2.0  
54  
55  
40  
20  
0
20  
40  
60  
80  
40  
0
20  
40  
60  
80  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 21. Glitch Filter Delay Time  
Figure 22. FLTTIME Charging Current  
4.25  
4.20  
4.15  
4.10  
4.05  
4.00  
0.7  
0.6  
0.5  
0.4  
3.95  
3.90  
3.85  
0.3  
0.2  
0.1  
0
3.80  
3.75  
40  
20  
0
40  
60  
80  
40  
20  
0
20  
40  
60  
80  
MPERTURE (°C)  
TEMPERATURE (°C)  
FigTIME Threshold Voltage  
Figure 24. FLTTIME Discharge Current  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
40  
20  
0
20  
40  
60  
80  
TEMPERATURE (°C)  
Figure 25. FaultRetry Duty Cycle  
www.onsemi.com  
8
TPS2398, TPS2399  
DETAILED PIN DESCRIPTIONS  
EN  
to the load is enabled. The device charges the external  
Enable input to turn on/off power to the load. The EN pin  
capacitor to establish the reference input to the LCA. The  
closedloop control of the LCA and pass FET acts to  
maintain the current sense voltage at ISENS at the reference  
potential. Since the sense voltage is developed as the drop  
across a resistor, the charging current ramp rate is set by the  
voltage ramp rate at the IRAMP pin. When the output is  
disabled via the EN input or due to a load fault, the capacitor  
is discharged and held low to initialize for the next turnon.  
is referenced to the VIN potential of the circuit. When this  
input is pulled high (above the nominal 1.4 V threshold) the  
device enables the GATE output, and begins the ramp of  
current to the load. When this input is low, the linear current  
amplifier (LCA) is disabled, and a large pulldown device  
is applied to the FET gate, disabling power to the load.  
FLTTIME  
Connection for userprogramming of the fault timeout  
period. An external capacitor connected from FLTTIME to  
VIN establishes the timeout period to declare a fault  
condition. This timeout protects against indefinite current  
sourcing into a faulted load, and also provides a filter against  
nuisance trips from momentary current spikes or surges. The  
TPS2398 and TPS2399 define a fault condition as voltage at  
the ISENS pin at or greater than the 40 mV fault threshold.  
When a fault condition exists, the timer is active. The  
devices manage fault timing by charging the external  
capacitor to the 4 V fault threshold, then subsequently  
discharging it to reset the timer (TPS2398), or dischging  
it at approximately 1% the charge rate to establish the dy  
cycle for retrying the load (TPS2399). r th
internal fault latch is set (timer expired), T is  
rapidly turned off, and the /PG output is de
ISENS  
Current sensinput. An external low value resistor  
connected beween this pin and VIN is used to feedback  
current maitudinformation to the TPS2398/99. There  
are twinterdeve thresholds associated with the  
voltat the ISEpin. During charging of the load’s input  
capacitane, or during other periods of excessive demand,  
the HSPM as to limit this voltage to 40 mV. Whenever the  
LA is in current regulation mode, the capacitor at  
LTTIE pin is charged to activate the timer. If, when the  
Cis driving to its supply rail, a fastacting fault such as  
a shortcircuit, causes the ISENS voltage to exceed 100 mV  
(the overload threshold), the GATE pin is pulled low rapidly,  
bypassing tfault timer.  
PG  
Opendrain, activelow indication of load power good. A  
power goostatus is declared when the output is enabled, the  
GATE pin voltage has ramped to at least 7.5 V, and the  
voltage on the IRAMP pin exceeds approximately 4.5 V.  
This last condition assures that full programmed sourcing  
current is available prior to declaring power good, even with  
very slow current ramp rates. This additional protection  
prevents potential discharging of the module input bulk  
capacitance during load turnon.  
GATE  
Gate drive for external Nchannl ET. When enabled,  
and the input supply is abovUVLO thrhold, the gate  
drive is enabled and the ds charging an external  
capacitor connected to the n. This pin voltage is  
used to develop the erencge at the nonverting  
input of the inteThe inverting input is connect
to the current seENS. The LCA acts to slew the  
pass FET gate the ISENS voltage to track the  
reference. The reference is internally clamped at 40 mV, so  
the maximum current that can be sourced to the load is  
determined by the sense resistor value as  
RTN  
Positive supply input for the TPS2398/99. For negative  
voltage systems, the supply pin connects directly to the  
return node of the input power bus. Internal regulators lower  
down the input voltage to generate the various supply levels  
used by the TPS2398 and TPS2399.  
I
40 mV / R . Once the load vltage haramped up  
MAX  
SNS  
to the input dc potential, and current demand drops off, the  
LCA drives the GATE output to about 14 V to fully enhance  
the pass FET, completing the lowimpedance supply return  
path for the load.  
VIN  
Negative supply input and reference pin for the  
TPS2398/99. This pin connects directly to the input supply  
negative rail. The input and output pins and all internal  
circuitry are referenced to this pin, so it is essentially the  
GND or VSS pin of the device.  
IRAMP  
Programming input for setting the inrush current slew  
rate. An external capacitor connected between this pin and  
VIN establishes the load current slew rate whenever power  
www.onsemi.com  
9
TPS2398, TPS2399  
APPLICATIONS INFORMATION  
General  
The voltage at IRAMP is divided down by a factor of 100,  
When a plugin module or printed circuit card is inserted  
and applied to the noninverting input of the LCA. Load  
current magnitude information at the ISENS pin is applied  
to the inverting input. This voltage is developed by  
connecting the current sense resistor between ISENS and  
VIN. The LCA controls the gate of the external pass FET  
to force the ISENS voltage to track the divided down  
IRAMP voltage. Consequently, the load current slew rate  
tracks the linear voltage ramp at the IRAMP pin, producing  
a linear di/dt of the load current. The IRAMP capacitor is  
charged to about 5 V; however, the LCA input is clamped at  
40 mV. Therefe, the current sourced to the load during  
into a live chassis slot, discharged supply bulk capacitance  
on the board can draw huge transient currents from the  
system supplies. Without some form of inrush limiting,  
these currents can reach peak magnitudes ranging up to  
several hundred amps, particularly in highvoltage systems.  
Such large transients can damage connector pins, PCB etch,  
and plugin and supply components. In addition, current  
spikes can cause voltage droops on the power distribution  
bus, causing other boards in the system to reset.  
The TPS2398 and TPS2399 are hot swap power managers  
designed to limit these peaks to preset levels, as well as  
control the slew rate (di/dt) at which charging current ramps  
to the userprogrammed limit. These devices use an external  
Nchannel pass FET and sense element to provide  
closedloop control of current sourced to the load. Input  
supply undervoltage lockout (UVLO) protection allows  
hot swap circuits to turn on automatically with the  
application of power, or to be controlled with a system  
command via the EN input. External capacitors control both  
the current ramp rate, and the timeout period for oad  
voltage ramping. In addition, an internal overlo
comparator provides circuit breaker protainst  
shorts occurring during steadystate on)  
operation of the card.  
The TPS2398 and TPS2399 oprate directly from the  
input supply (nominal 48 VDra. Te –VIN pin  
connects to the negative votge rail, and he RTN pin  
connects to the supply reternal regulators convert  
input power to the suppquired by the device  
circuitry. An input UVLO cirs the GATE output low  
until the supply eacha nominal 30 V level.
second comparthe EN input; this pin must be  
pulled above the le threshold to turn on power to  
the load.  
Once enabled, and when the input supply s above the  
UVLO threshold, the GATE pulldown is removed, the  
linear control amplifier (LCA) is enabled, ad a large  
discharge device in the RAMP CONTROL bock is turned  
off. Subsequently, a small current source is now able to  
charge an external capacitor connected to the IRAMP pin.  
This results in a linear voltage ramp at IRAMP. The voltage  
ramp on the capacitor actually has two discrete slopes. As  
shown in Figure 2, charging current is supplied from either  
of two sources. Initially at turnon, the 600 nA source is  
selected, to provide a slow turnon rate. This slow turnon  
helps ensure that the LCA is pulled out of saturation, and is  
slewing to the voltage at its noninverting input before  
normal rate load charging is allowed. This mechanism helps  
reduce current steps at turnon. Once the voltage at the  
IRAMP pin reaches approximately 0.5 V, an internal  
comparator deasserts the SLOW signal, and the 10 mA  
source is selected for the remainder of the ramp period.  
turnon is liited to a value given by I  
40 mV / R  
,
MAX  
SNS  
where R  
te value of the sense resistor.  
NS  
The esultant oad current, regulated by the controller,  
chagethe modue’s input bulk capacitance in a safe  
ashion. nder normal conditions, this capacitance  
eventually charges up to the dc input potential. At this point,  
te load demand drops off, and the voltage at ISENS  
ecrees. The LCA now drives the GATE output to its  
sly rail.  
The device detects this condition as the GATE voltage  
rises through 7.5 V, latches thistatus and asserts the /PG  
output. If the full srced current limit is not yet available to  
the loa, as evidenced by the IRAMP voltage being less than  
5 Ven the /PG asseron is delayed until that condition is  
also met.  
The peak, steadystate GATE pin output, typically 14 V,  
ensures suffiient overdrive to fully enhance the external  
FET, whilnot exceeding the typical 20 V V rating of  
GS  
common Nchannel power FETs.  
Fault timing is accomplished by connecting a capacitor  
between the FLTTIME and VIN pins, allowing  
userprogramming of the timeout period. Whenever the hot  
swap controller is in current control mode as described  
above, the LCA asserts an overcurrent indication – OC  
signal in the Figure 2. Overcurrent fault timing is inhibited  
during the slow turnon portion of the IRAMP waveform.  
However, once the device transitions to the normal rate  
current ramp (V  
0.5 V), the external capacitor is  
IRAMP  
charged by a 50 mA source, generating a voltage ramp at the  
FLTTIME pin. If the load voltage ramps successfully, the  
fault capacitor is discharged, and load initialization can  
begin. However, if the timing capacitor voltage attains the  
4 V fault threshold, the LCA is disabled, the pass FET is  
rapidly turned off, and the fault is latched. Fault capacitor  
charging ceases, and the capacitor is then discharged. In  
addition, latching of a fault condition causes rapid discharge  
of the IRAMP capacitor. In this manner, the softstart  
function is then reset and ready for the next output enable,  
if and when conditions permit.  
Subsequent to a plugin’s startup, and during the  
module’s steadystate operation, load faults that force  
current limit operation also initiate fault timing cycles as  
www.onsemi.com  
10  
TPS2398, TPS2399  
described above. In this case, a fault timeout also clears the  
previously latched power good status.  
Figure 26 is a scope capture of the TPS2398/99 response  
in a diodeOR configuration to such an input transient event.  
(All waveforms are referenced to the VIN pin.) In this  
example, the module is initially operating from a nominal  
43 V supply (relative to the backplane supply return node).  
At the first major time division, another power supply, with  
an output of 48 V, is suddenly hot swapped into a  
secondary, or INB, input. This sudden voltage step is  
reflected in the 48V_RTN trace. On this board, the 5 V  
The TPS2398 latches off in response to faults; once a fault  
timeout occurs, a large NMOS device is activated to rapidly  
discharge the external capacitor, resetting the timer for any  
subsequent device reset. The TPS2398 can only be reset by  
cycling power to the device, or by cycling the EN input.  
In response to a latched fault condition, the TPS2399  
enters a fault retry mode, wherein it periodically retries the  
load to test for continued existence of the fault. In this mode,  
the FLTTIME capacitor is discharged slowly by a about a  
0.4 mA constantcurrent sink. When the voltage at the  
FLTTIME pin decays below 0.5 V, the LCA and RAMP  
CONTROL circuits are reenabled, and a normal turnon  
current ramp ensues. Again, during the load charging, the  
OC signal causes charging of the FLTTIME capacitor until  
the next delay period elapses. The sequential charging and  
discharging of the FLTTIME capacitor results in a typical  
1% retry duty cycle. If the fault subsides, the timing  
capacitor is rapidly discharged, dutycycle operation stops,  
and the /PG output is asserted.  
potential difference caused an 8 A spike, as shown by the I  
IN  
trace (I trace has been measured after the diodeOR). The  
IN  
GATE pin is rapidly pulled low, which quickly terminates  
the overload spike. However, it is quickly released, and seen  
to drive back the pass FET ONthreshold, in this case,  
about 5 V. he rultant currentlimit operation of the  
circuit ievided by he 2 A load on the B supply. Once  
supplcurrent iflwing again, the filter capacitance is  
chrged p to the new input supply level, seen here on the  
V
DRAIN  
tre. Once the capacitance is fully charged, the  
load demand rolls off to the operating 1 A level. As an added  
enefit, this event is transparent to the /PG signal, which  
emas asserted throughout the disturbance.  
Note that because of the timing inhibit during the initial  
slow ramp period, the duty cycle in practice is sightly  
greater than the nominal 1% value. However, soued  
current during this period peaks at only about ohth th
maximum limit. The duty cycle of the noand  
constantcurrent periods is approximately 1
V
RTN  
(5 V/div, offset 43 V)  
V
IRAMP  
(2 V/div)  
The FAULT LOGIC within tTIMOCK  
automatically manages capacitocharge and discharge  
actions, and the enabling of the GAoutpu
C
C
C
R
R
= 3.9 nF  
= 100 nF  
= 100 mF  
= 50 W  
= 20 W  
IRAMP  
FLTTM  
OUT  
OUT  
SNS  
Supply Transient Respo
The TPS2398 and TPfeature a fastacting  
overload comparator which clamp large transients  
from catastrophicurrionce the pass FET is fu
enhanced, such cuits. This function provides a  
backup protectLCA by providing a hard gate  
discharge action whee LCA is saturated. If sense voltage  
excursions above 100 mV are detected, this comparator  
rapidly pulls down the GATE output, bypassing the fault  
timer, and terminating the shortcircuit conditio. Once the  
spike has been brought down below the overlad threshold,  
the GATE output is released, allowing the circuit to turn on  
again in either currentramp or currentlimit mode. A 4 ms  
deglitch filter is applied to the OL signal to help reduce the  
occurrence of nuisance trips.  
I
(2 A/div)  
IN  
V
(5 V/div)  
GATE  
V
(5 V/div)  
DRAIN  
V
(50 V/div)  
/PG  
In redundantsupply systems, the sudden switchover to a  
supply of higher voltage potential is one more source of  
large current spikes. Due to the low impedance of filter  
capacitance under such highfrequency transients, these  
spikes are generally indistinguishable from true  
shortcircuit faults to a hot swap controller. However, the  
TPS2398 and TPS2399 transient response addresses this  
issue by providing rapid circuitbreaker protection for load  
faults along with minimal interruption of power flow during  
supply switching events. The scope plots in Figure 26  
illustrate how.  
Figure 26. Input Transient Response  
In order for downstream loads (bricks, etc.) to operate  
through the distribution bus transient, it is important to  
properly size the filtering capacitance to supply the needed  
energy during the OFFtime of the pass FET. In this  
example, once the RTN node jumps by 5 V higher than the  
original potential, about 6 V develops across the FET,  
www.onsemi.com  
11  
TPS2398, TPS2399  
Setting the Inrush Slew Rate  
indicating approximately a 1 V droop across the brick input.  
Therefore, due to the fast response of the TPS2398/99  
devices, the 100 mF capacitor achieves excellent holdup of  
the brick input voltage. Actual requirements depend heavily  
on the individual application. Whether the device turns back  
on in either currentramp or currentlimit mode depends in  
The TPS2398 and TPS2399 devices enable  
userprogramming of the maximum current slew rate  
during load startup events. A capacitor tied to the IRAMP  
pin (C in the typical application diagram) controls the di/dt  
2
rate. Once the sense resistor value has been established, a  
value for ramp capacitor C  
, in microfarads, can be  
part on the size of the ramp capacitor (C ) and the input  
IRAMP  
IRAMP  
determined from Equation 2.  
capacitance of the pass FET. But in any case, the circuit turns  
back on in a controlledcurrent manner after rapidly  
clamping the potentially damaging spike.  
11  
CIRAMP  
+
(eq. 2)  
di  
@ ǒ Ǔ  
100 @ RSNS  
dt  
MAX  
Setting the Sense Resistor Value  
Where:  
Due to the currentlimiting action of the internal LCA, the  
maximum allowable load current for an implementation is  
easily programmed by selecting the appropriate sense  
resistor value. The LCA acts to limit the sense voltage  
R  
is in hms, and  
SENSE  
is thdesired maximum slew rate, in  
peres/cond.  
di  
ǒdtǓ  
X  
V
ISENS  
to its internal reference. Once the voltage at the  
For emple, if e desired slew rate for the typical  
applicatioshown is 1500 mA/ms, the calculated value for  
IRAMP pin exceeds approximately 4 V, this limit is the  
clamp voltage, V . Therefore, a maximum sense  
REF_K  
C
IRAMP  
is aout 3.7 nF. Selecting the next larger standard  
resistor value can be determined from Equation 1.  
vue of 3.9 nF (as shown in the diagram) provides some  
margin or capacitor and sense resistor tolerances.  
Adescribed earlier in this section, the TPS2398 and  
TPS2399 initiate ramp capacitor charging, and  
consequently, load current di/dt at a reduced rate. This  
reduced rate applies until the voltage on the IRAMP pin is  
about 0.5 V. The maximum di/dt rate, as set by Equation 2,  
is efective once the vice has switched to the 10 mA  
charging source.  
VREF_K(MIN)  
R
R
SNS(MAX) v  
(eq. 1)  
IMAX  
33 mV  
IMAX  
SNS(MAX) v  
Where:  
R  
is the sense resistor value,  
is the minimum refclamp voltnd  
is the desired current lim
SNS  
V  
REF_K(MIN)  
I  
MAX  
Setting the Fault Timing Capacitor  
When setting the sense resir value, it iimportant to  
consider two factors, the um current that may be  
imposed by the TPS2398 9, and the maximum  
load under normal operatiomodule. For he first  
factor, the speciinimm clamp value is used,
seen in Equatiothod accounts for the tolerance  
in the sourced cubelow the typical level expected  
The fault timeout period is established by the value of the  
capacitor connected to the FLTTIME pin, C . The  
FLTTM  
timeout period permits riding out spurious current glitches  
and surges that may occur during operation of the system,  
and prevents indefinite sourcing into faulted loads swapped  
into a live system. However, to ensure smooth voltage  
ramping under all conditions of load capacitance and input  
supply potential, the minimum timeout should be set to  
accommodate these system variables. To do this, a rough  
estimate of the maximum voltage ramp time for a  
completely discharged plugin card provides a good basis  
for setting the minimum timer delay.  
Due to the threephase nature of the load current at  
turnon, the load voltage ramp potentially has three distinct  
phases (compare Figures 3 and 4). This profile depends on  
the relative values of load capacitance, input dc potential,  
maximum current limit and other factors. The first two  
phases are characterized by the two different slopes of the  
current ramp; the third phase, if required for bulk  
capacitance charging, is the constantcurrent charging at  
(40 mV / R ). (The clamp measurement includes LCA  
SNS  
input offset voltage; therefore, this offset does not have to be  
factored into the current limit again.) Second, if the load  
current varies over a range of values uner norml operating  
conditions, then the maximum load level mut be allowed  
for by the value of R . One example of this is when the  
SNS  
load is a switching converter, or brick, which draws higher  
input current, for a given power output, when the  
distribution bus is at the low end of its operating range, with  
decreasing draw at higher supply voltages. To avoid  
currentlimit operation under normal loading, some margin  
should be designed in between this maximum anticipated  
load and the minimum current limit level, or  
I
> I , for Equation 1.  
LOAD(MAX)  
MAX  
I
. Considering the two current ramp phases to be one  
MAX  
For example, using a 20 mW sense resistor for a nominal  
period at an average di/dt simplifies calculation of the  
required timing capacitor.  
1 A load application provides a minimum of 650 mA of  
overhead for load variance/margin. Typical bulk capacitor  
charging current during turnon is 2 A (40 mV / 20 mW).  
www.onsemi.com  
12  
 
TPS2398, TPS2399  
For the TPS2398 and TPS2399, the typical duration of the  
softstart ramp period, t , is given by Equation 3.  
With this information, the minimum recommended value  
timing capacitor C can be determined. The delay time  
SS  
FLTTM  
needed will be either a time t  
or the sum of t  
and t  
,
SS2  
SS2  
CC  
(eq. 3)  
t
SS + 1183 @ CIRAMP  
according to the estimated time to charge the load. The  
quantity t is the duration of the normal rate current ramp  
Where:  
t is the softstart period in ms, and  
SS2  
period, and is given by Equation 6.  
SS  
C  
is given in mF  
(eq. 6)  
t
SS2 + 0.35 @ CRAMP  
IRAMP  
During this current ramp period, the load voltage magnitude  
which is attained is estimated by Equation 4.  
Where:  
C  
is given in microfarads  
RAMP  
iAVG  
2
(eq. 4)  
Since fault timing is generated by the constantcurrent  
charging of C , the capacitor value is determined from  
VLSS  
+
@ tSS  
2 @ CLOAD @ CRAMP @ 100 @ RSNS  
FLTTM  
either Equation or 8, as appropriate.  
Where:  
V  
is the load voltage reached during softstart,  
is 3.38 mA for the TPS2398 and TPS2399,  
is the amount of the load capacitance, and  
55 @ tSS2  
3.75  
LSS  
(eq. 7)  
(eq. 8)  
FLTTM(MIN)  
+
i  
AVG  
C  
55 @ ǒt  
Ǔ
LOAD  
SS2 ) tCC  
CFLTTM(MIN)  
+
t is the softstart period, in seconds  
SS  
3.75  
The quantity i  
two charge currents applied to C  
considering the typical output values.  
If the result of Equation 4 is larger than the maximum  
input supply value, then the load can be expected to arge  
completely during the inrush slewing portion of the insern  
event. However, if this voltage is less than imum  
in Equation 4 is a weighted average of the  
AVG  
Where:  
during turnon,  
IRAMP  
C  
is the recommended capacitor value, in  
FLTTM(MIN)  
miofarads,  
is the result of Equation 6, in conds, and  
SS2  
t is the result of Equation 5, in seconds.  
CC  
Continuing e typical application example, using a 100 mF  
supply input, V , the HSPM trathe  
IN(MAX)  
input capacitor (C  
)Equations 3 and 4 estimate the  
LOAD  
constantcurrent charging of the load. Ting  
load voltage ramping approximately 46 V during the  
softstart period. If the module should operate down to  
72 V input supply, approximately another 1.58 ms of  
constantcurrent charging may be required. Therefore,  
amount of time required at I  
Equation 5.  
is determfrom  
MA
ǒ
Ǔ
C
LOAD @ MAX) * VS  
Equations and 8 are used to determine C  
, and  
FLTTM(MIN)  
(eq. 5)  
tCC  
+
)  
the result of 43 nF suggests the 47 nF standard value.  
Where:  
t is the cont voltage ramp time, in  
CC  
seconds, and  
V  
is the minimum clamp voltage, 33 mV.  
REF_K(MIN)  
www.onsemi.com  
13  
 
TPS2398, TPS2399  
PACKAGE DIMENSIONS  
MSOP 8, 3x3  
CASE 846AD  
ISSUE O  
SYMBOL  
MIN  
NOM  
MAX  
A
A1  
A2  
b
1.10  
0.15  
0.95  
0.38  
0.23  
3.10  
5.00  
3.10  
0.05  
0.75  
0.22  
0.13  
.90  
4.80  
2.90  
0.10  
0.85  
c
D
3.00  
4.90  
E
E1  
E
e
3.00  
0.65 BSC  
0.60  
L
0.40  
0.80  
L2  
θ
0.95 REF  
0.25 BSC  
0º  
6º  
TOP VIEW  
D
A2  
A
DETAIL A  
A1  
b
c
E VIEW  
END VIEW  
q
L2  
Notes:  
L
(1) All dimensions are in millimeters. Angles in degrees.  
(2) Complies with JEDEC MO-187.  
L1  
DETAIL A  
www.onsemi.com  
14  
TPS2398, TPS2399  
ORDERING INFORMATION  
Device  
Marking  
2398  
Fault Operation  
Latch off  
Package  
Shipping†  
TPS2398DMT7G  
TPS2399DMT7G  
MSOP8  
(PbFree)  
3000 / Tape & Reel  
2399  
Periodically retry  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
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coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
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TPS2398/D  

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